Infineon Technologies BSZ042N04NSGATMA1

Overview

BSZ042N04NSGATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TSDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS applications. It delivers 40 V V_DS, 4.2 mΩ R_DS(on) (max) at V_GS = 10 V, 20 A, and features avalanche rating, low gate charge (Q_g = 35–46 nC), and superior thermal resistance (R_thJC = 1.8 K/W).

For engineers reviewing the BSZ042N04NSGATMA1 datasheet, BSZ042N04NSGATMA1 pinout, BSZ042N04NSGATMA1 application, or BSZ042N04NSGATMA1 equivalent, key selection criteria include its 4.2 mΩ on-resistance, 40 A continuous drain current at T_C = 25 °C, fast switching performance (t_r = 3.4 ns, t_f = 4.2 ns), and suitability for synchronous rectification and high-frequency buck converters.

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_g × R_DS(on) figure-of-merit (FOM) enables high efficiency in 300 kHz–1 MHz DC/DC topologies, while the integrated body diode supports synchronous FET operation with Q_rr = 38 nC and V_SD = 0.84–1.2 V at I_F = 20 A.

The MOSFET is qualified per JEDEC standards for industrial and computing power supplies, with guaranteed operation from –55 °C to +150 °C junction temperature. Its PG-TSDSON-8 package provides low-inductance source connections and enhanced thermal transfer via exposed drain pad, supporting >69 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height) with exposed drain pad for thermal and electrical connection. Pin 1 marked by dot; pins 1–4 are source, pins 5–8 are drain (shared), gate at pin 7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6342TRPBF and DMT6004LPS-13, BSZ042N04NSGATMA1 offers the best balance of low R_DS(on), moderate Q_g, and JEDEC-qualified robustness-making it optimal for high-frequency, thermally constrained server and telecom DC/DC designs.

Availability

BSZ042N04NSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and automotive ADAS ECUs requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for BSZ042N04NSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate voltage for BSZ042N04NSGATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for V_GS = 10 V operation. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD risk. For reliable long-term operation, 10 V is the recommended nominal gate drive level.

Does BSZ042N04NSGATMA1 require a gate resistor for stability?

Yes-a series gate resistor (typically 1.6–5.6 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 30 pF) and PCB inductance. The internal gate resistance is 1.8 Ω, but external resistance must be added to control dV/dt and prevent spurious turn-on during high dI/dt commutation.

Can BSZ042N04NSGATMA1 be used in linear mode (saturation region)?

No-it is not rated or characterized for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulsed operation only up to V_DS = 20 V at I_D = 40 A, and continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). It must be operated in switching mode with adequate dead-time control.

Is the PG-TSDSON-8 package leadless and compatible with standard reflow profiles?

Yes-the PG-TSDSON-8 is a leadless, surface-mount package with J-STD-020-compliant solder paste stencil design and reflow profile. Its exposed drain pad requires thermal vias to inner ground planes, and peak reflow temperature must not exceed 260 °C for ≤30 seconds to avoid delamination or gate oxide damage.