Infineon Technologies BSZ058N03LSGATMA1

Overview

BSZ058N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in the OptiMOS™3 family, rated for 30 V drain-source voltage, with a maximum R_DS(on) of 5.8 mΩ at V_GS = 10 V and 71 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and is optimized for high-efficiency DC/DC converters and synchronous rectification in server VRMs and POL modules.

For engineers reviewing the BSZ058N03LSGATMA1 datasheet, BSZ058N03LSGATMA1 pinout, BSZ058N03LSGATMA1 application, or BSZ058N03LSGATMA1 equivalent, key selection criteria include its 5.8 mΩ on-resistance, 14 nC total gate charge, 2.8 K/W junction-to-case thermal resistance, avalanche rating (E_AS = 55 mJ), and PG-TSDSON-8 package compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs trench-based silicon technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM) and fast switching performance. Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device supports synchronous rectification with low reverse recovery charge (Q_rr = 10 nC) and exhibits stable R_DS(on) over temperature (±15% drift from −60 °C to 150 °C). Its 6 kV/µs dv/dt ruggedness ensures robust operation in hard-switched topologies.

Key Specifications

Pinout & Package

BSZ058N03LSGATMA1 is housed in a PG-TSDSON-8 (exposed drain pad) surface-mount package with 0.65 mm pitch, optimized for thermal performance and high-current routing. The exposed drain pad (Pins 5–8) serves as primary thermal and electrical path to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLHS6242TRPBF and DMTH3007LPSQ-13, BSZ058N03LSGATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and industry-standard thermal performance in compact TSDSON-8 - making it ideal for space-constrained, high-frequency POL designs requiring both efficiency and reliability.

Availability

BSZ058N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drive auxiliary supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSZ058N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 Power-MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

Is BSZ058N03LSGATMA1 suitable for synchronous rectification in a 500 kHz buck converter?

Yes. With R_DS(on) = 5.8 mΩ at 10 V gate drive and Q_rr = 10 nC, it delivers low conduction and reverse recovery losses at 500 kHz. Its 14 nC total gate charge ensures manageable drive requirements from standard PWM controllers, and its 2.8 K/W R_thJC supports thermal stability under continuous 50 A load with proper PCB copper design.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies 6 cm² of 70 µm-thick copper on FR4 (one layer) for drain connection, vertically mounted in still air. This achieves R_thJA = 60 K/W and supports 71 A continuous current at T_C = 25 °C. Increasing copper area or adding internal layers further lowers R_thJA, but the 6 cm² baseline is validated per JEDEC J-STD-20 for production reliability.

Does BSZ058N03LSGATMA1 have integrated ESD protection?

No. While the device meets HBM ESD classification per JESD22-A114 (≥2 kV), it does not integrate dedicated on-die ESD protection structures beyond standard process-level robustness. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended in high-noise environments such as motor drives or automotive power systems.

Can BSZ058N03LSGATMA1 replace older OptiMOS™2 devices in existing designs?

Yes, with verification. It shares identical PG-TSDSON-8 footprint and pinout with BSZ065N03LS, but offers 12% lower R_DS(on) and 15% lower Q_g. Layout compatibility is maintained, though gate drive timing and loop stability should be rechecked due to faster switching edges and reduced gate charge.