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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0602LSATMA1

Name: BSZ0602LSATMA1
Brand: Infineon Technologies
SKU: BSZ0602LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0602LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0602LSATMA1.pdf

Description:: MOSFET N-CH 80V 13A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Inventory:4,940

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Product details

Overview

BSZ0602LSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET in TSDSON-8 FL package, rated for 80 V V_DS, 7.0 mΩ R_DS(on) at V_GS = 4.5 V, 40 A continuous drain current, and optimized for high-frequency switching in USB PD and notebook chargers.

For engineers reviewing the BSZ0602LSATMA1 datasheet, BSZ0602LSATMA1 pinout, BSZ0602LSATMA1 application, or BSZ0602LSATMA1 equivalent, this device delivers low gate charge (Q_G = 14 nC), excellent FOM (Q_G × R_DS(on)), 100% avalanche tested ruggedness, and enhanced solder joint reliability via enlarged source interconnection.

Technical Context

This OptiMOS™5 power transistor uses trench-based silicon technology to achieve ultra-low R_DS(on) and minimized output charge (Q_OSS = 29 nC) for efficient synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.1–2.3 V) ensures reliable turn-on with 3.3 V/5 V logic drivers.

The device features a thermally optimized TSDSON-8 FL package with exposed drain pad and enlarged source terminals, enabling low R_thJC = 1.1 K/W and high pulsed current capability (I_D,pulse = 160 A). It supports standard-grade industrial operation from −55 °C to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 24–48 V input DC-DC and secondary-side synchronous rectification
R_DS(on), max	7.0 mΩ at V_GS = 4.5 V - Enables <1 W conduction loss at 40 A, critical for compact charger thermal design
I_D, cont	40 A at T_C = 25 °C - Supports high-current USB PD 3.1 100 W adapter outputs
Q_G(0–4.5 V)	14 nC - Low gate drive energy reduces controller IC loading and enables >1 MHz switching
Q_OSS	29 nC - Minimizes turn-off loss and improves light-load efficiency in resonant topologies
E_AS	104 mJ - Confirmed single-pulse avalanche robustness for unclamped inductive switching events
V_GS(th)	1.1–2.3 V - Ensures full enhancement with 3.3 V microcontroller GPIO or dedicated gate driver ICs

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) is a surface-mount, thermally enhanced 8-pin package with exposed drain pad on bottom and enlarged source terminals for improved current handling and solder joint reliability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications
4	Gate	Single gate input with 1.3 Ω typical gate resistance; compatible with standard 3.3 V/5 V logic-level drivers
5, 6, 7, 8, D	Drain	Five-drain-terminal configuration including large bottom-exposed pad for optimal thermal path to PCB

Key Features

Feature	Design Value
Optimized Q_G × R_DS(on) figure-of-merit	100 mΩ·nC - Enables high-efficiency, high-density SMPS designs operating up to 1 MHz
Enlarged source interconnection	4× dedicated source pins + extended copper area - Reduces bond wire stress and improves long-term reliability under thermal cycling
100% avalanche tested	Rated E_AS = 104 mJ at I_D = 20 A - Guarantees ruggedness in flyback and LLC transient conditions without external snubbers
Logic-level gate drive	V_GS(th) ≤ 2.3 V - Eliminates need for level-shifting circuitry when driven by MCU or PWM controller with 3.3 V outputs
Pb-free, halogen-free	RoHS-compliant plating per IEC61249-2-21 - Meets global environmental compliance requirements for consumer and industrial end equipment

Applications

USB PD 100 W Charger Secondary Side

Server VRM High-Side Switch

Use Scenario: Secondary-side synchronous rectification in 100 W GaN-based USB PD 3.1 adapters.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated by primary-side controller via isolated gate driver signal.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >96% peak efficiency and 25 °C lower MOSFET junction temperature at full load.

Use Scenario: High-side switch in multiphase 48 V–12 V server buck converters.

IC Role / Device Role / Timing Role: Power stage switch operating at 500 kHz–1 MHz with active gate control and dead-time management.

Use Value: Low Q_GD/Q_G ratio (≈0.35) minimizes Miller-induced shoot-through risk and improves timing margin in fast-switching VRMs.

Industrial 48 V DC-DC Converter

Automotive Body Control Module Load Switch

Use Scenario: Primary-side switch in isolated 48 V–12 V DC-DC for telecom and industrial power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or active-clamp forward topology with 80 V bus rating.

Use Value: 104 mJ E_AS withstands 48 V bus transients and inductive kickback during short-circuit events without failure.

Use Scenario: Protected high-side load switch for LED lighting and solenoid drivers in BCMs.

IC Role / Device Role / Timing Role: Logic-level controlled power switch with integrated reverse polarity and overtemperature protection support.

Use Value: 7.0 mΩ R_DS(on) limits voltage drop to <300 mV at 40 A, enabling precise current sensing and low-power standby operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB060N08N5	80 V, 6.0 mΩ @ 10 V, Q_G = 22 nC - higher R_DS(on) at 4.5 V (10.5 mΩ), not logic-level optimized	Requires 10 V gate drive; less suitable for 3.3 V controller interfaces	Prefer when system uses 10 V gate drivers and prioritizes R_DS(on) over switching speed
STL220N6F7	60 V, 2.2 mΩ @ 10 V, Q_G = 32 nC - lower voltage rating, higher Q_G, not 80 V rated	Not suitable for 48 V bus or USB PD 100 W secondary side due to insufficient V_DS	Select only for 24 V systems where sub-3 mΩ R_DS(on) justifies reduced voltage margin

Compared with IPB060N08N5 and STL220N6F7, BSZ0602LSATMA1 uniquely balances 80 V rating, logic-level compatibility, and low Q_G × R_DS(on) - making it optimal for space-constrained, high-frequency 48–60 V applications requiring 3.3 V drive and avalanche ruggedness.

Availability

BSZ0602LSATMA1 is available at Aetrix Electronics and suitable for USB PD chargers, server VRMs, industrial 48 V DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for BSZ0602LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™5 family - engineered specifically for high-efficiency, high-frequency power conversion in consumer chargers, data center VRMs, and industrial SMPS where low Q_G and low R_DS(on) are co-optimized.

FAQ

Is BSZ0602LSATMA1 suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1.1 V to 2.3 V and R_DS(on) = 7.0 mΩ specified at V_GS = 4.5 V, BSZ0602LSATMA1 fully enhances using standard 3.3 V logic outputs. Its low threshold ensures robust turn-on even with driver output voltage droop under load.

What is the thermal resistance from junction to case (R_thJC)?

The maximum junction-to-case thermal resistance is 1.8 K/W, with a typical value of 1.1 K/W. This is measured from the silicon die to the bottom drain pad of the TSDSON-8 FL package, enabling direct thermal coupling to a PCB copper plane or heatsink for high-power operation.

Does BSZ0602LSATMA1 include integrated ESD protection?

No. BSZ0602LSATMA1 does not integrate on-die ESD protection structures. External TVS diodes or RC snubbers are recommended at gate and drain terminals in systems exposed to human-body-model (HBM) or system-level ESD events per IEC 61000-4-2.

Can BSZ0602LSATMA1 replace older OptiMOS™4 devices in existing layouts?

Yes - the TSDSON-8 FL footprint is mechanically and electrically compatible with earlier PG-TSDSON-8 packages like those used for BSZ075N08NS5. Pin assignment, pad dimensions, and thermal pad layout match, allowing drop-in replacement without PCB revision.

BSZ0602LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0602LSATMA1 FAQ

1.How can I place an order for BSZ0602LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0602LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0602LSATMA1 reliable?

The price and inventory of BSZ0602LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0602LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0602LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0602LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0602LSATMA1?

BSZ0602LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0602LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0602LSATMA1?

For technical support, including BSZ0602LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0602LSATMA1 requirements.

6.How does Aetrix verify that BSZ0602LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0602LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0602LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0602LSATMA1?

All BSZ0602LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0602LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0602LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0602LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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