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Infineon Technologies BSZ0704LSATMA1
- Part No.:
- BSZ0704LSATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSZ0704LSATMA1.pdf
- Description:
- MOSFET N-CH 60V 11A/40A TSDSON
- Quantity:
- Payment:
- Shipping:
Inventory:7,184
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Product details
Overview
BSZ0704LSATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in TSDSON-8 FL package, rated for 60 V VDS, 9.9 mΩ RDS(on) at VGS = 10 V, and 40 A continuous drain current. It features 13 nC QOSS, 7 nC QG(0–4.5 V), and is 100% avalanche tested - optimized for high-frequency switching in USB PD and laptop charger topologies.
For engineers reviewing the BSZ0704LSATMA1 datasheet, BSZ0704LSATMA1 pinout, BSZ0704LSATMA1 application, or BSZ0704LSATMA1 equivalent, key selection criteria include its low gate charge profile, superior thermal resistance (RthJC = 2.1 K/W), and logic-level drive compatibility with 4.5 V controllers in synchronous buck and OR-ing configurations.
Technical Context
This OptiMOS™ device uses trench-gate superjunction technology to achieve low RDS(on) × QG figure-of-merit (87 mΩ·nC) and fast switching (tr/tf = 2.7 ns). Its 1.7 V typical VGS(th) enables reliable turn-on with standard 3.3 V/5 V logic outputs.
The integrated body diode exhibits trr = 18–36 ns and Qrr = 6–12 nC under 100 A/µs di/dt, supporting efficient synchronous rectification and reverse recovery control in DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V input systems and 24 V industrial rails. |
| RDS(on), max | 9.9 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 32 A, critical for compact charger thermal design. |
| ID, cont | 40 A @ TC = 25 °C - Supports high-current output stages without external heatsinking on 6 cm² PCB copper. |
| QG(0–4.5 V) | 7 nC - Low gate charge reduces driver power and enables >1 MHz operation with minimal switching loss. |
| QOSS | 13 nC - Low output charge minimizes turn-off energy and improves light-load efficiency in hard-switched converters. |
| RthJC | 2.1 K/W - Enables direct thermal coupling to PCB ground plane, reducing junction-to-case temperature rise by >50 % vs. SO-8. |
| VGS(th) | 1.1–2.3 V - Logic-level threshold ensures full enhancement with 3.3 V microcontrollers and PWM ICs. |
Pinout & Package
TSDSON-8 FL (Thin Shrink DFN, 3.3 mm × 3.3 mm, 0.55 mm height) with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Power Drain (common source node) | All eight pins are internally connected to the drain terminal and exposed thermal pad - requires full-solder coverage for optimal thermal performance. |
| S1–S3 | Source terminals | Three dedicated source pins reduce source inductance and improve gate drive stability in high-dI/dt applications. |
| G | Gate input | Single gate pin with 1.1 Ω internal gate resistance - simplifies external gate resistor selection for EMI-controlled turn-on/off. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for level shifters in 3.3 V/5 V controller designs. |
| 100% avalanche rated | EAS = 19 mJ - withstands unclamped inductive switching events without degradation in motor drives and solenoid controls. |
| Low Qg/Qoss ratio | QG/QOSS ≈ 0.54 - balances switching speed and voltage overshoot, enabling stable operation in LLC resonant converters. |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - qualified for consumer and medical end equipment. |
| Standard Grade qualification | Rated for -55 °C to +150 °C operating range - suitable for automotive cabin modules and industrial PLC I/O stages. |
Applications
| USB-C Power Delivery Charger | Laptop DC-DC Converter |
|---|---|
Use Scenario: Primary-side synchronous rectifier in 65 W GaN-based USB-C charger with 100 kHz–1 MHz variable frequency control. IC Role / Device Role / Timing Role: High-side switch in active clamp flyback topology, driven by UCC28780 controller with adaptive dead-time control. Use Value: 9.9 mΩ RDS(on) and 7 nC QG reduce conduction and switching losses by 22 % versus comparable SO-8 MOSFETs, enabling 94.5 % peak efficiency. |
Use Scenario: Secondary-side synchronous FET in 20 V/5 A buck converter supplying CPU core voltage in ultrabook platforms. IC Role / Device Role / Timing Role: Low-side switch controlled by integrated PWM controller (e.g., ISL95838), operating at 500 kHz with 100 ns dead time. Use Value: 2.1 K/W RthJC allows 40 A continuous current with <45 °C junction rise on 4-layer PCB - eliminates need for thermal vias or heatsinks. |
| Industrial 24 V OR-ing Circuit | Server 12 V Intermediate Bus Converter |
Use Scenario: Hot-swap OR-ing FET in redundant 24 V power supply module for factory automation controllers. IC Role / Device Role / Timing Role: Reverse-polarity protected, bidirectional current path managed by LM5050-1 controller with fast turn-off (<100 ns). Use Value: 1.7 V VGS(th) ensures robust turn-on during brownout conditions; 128 A pulsed rating handles 2× inrush surges without derating. |
Use Scenario: Primary-side high-frequency switch in 12 V input, 48 V output isolated DC-DC module for AI accelerator racks. IC Role / Device Role / Timing Role: Active clamp forward switch driven by SiC gate driver (e.g., UCC5870-Q1), switching at 350 kHz. Use Value: 13 nC QOSS limits turn-off loss to <12 µJ per cycle - critical for maintaining <1.5 % efficiency penalty at 1.2 kW output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB070N06LG | RDS(on) = 7.0 mΩ @ 10 V, QG = 10.2 nC, TSDSON-8 but larger 5×6 mm footprint | Higher current density but requires PCB redesign due to larger package and different pinout | Preferred when lower RDS(on) justifies layout change and thermal margin exceeds 10 K/W |
| SI7157DP-T1-GE3 | RDS(on) = 11.5 mΩ @ 4.5 V, QG = 12.5 nC, SO-8 package with higher RthJA = 62 K/W | Compatible pinout but significantly higher conduction loss and slower switching in high-frequency designs | Acceptable only for <300 kHz applications where board space constraints prohibit DFN adoption |
Compared with IPB070N06LG and SI7157DP-T1-GE3, BSZ0704LSATMA1 delivers optimal balance of low gate charge, industry-leading thermal resistance, and logic-level compatibility - making it the preferred choice for space-constrained, high-efficiency 60 V switching applications without requiring package redesign or driver upgrades.
Availability
BSZ0704LSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery chargers, laptop DC-DC converters, and industrial 24 V OR-ing circuits requiring stable component supply and long-term production continuity.
Supply support for BSZ0704LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-frequency, high-efficiency power conversion in consumer adapters, computing power supplies, and industrial SMPS where low RDS(on) × QG and thermal performance are critical.
FAQ
Is BSZ0704LSATMA1 suitable for 3.3 V gate drive?
Yes. With a typical VGS(th) of 1.7 V and maximum of 2.3 V, BSZ0704LSATMA1 achieves full enhancement at 3.3 V gate voltage. Its RDS(on) = 11.3 mΩ at VGS = 4.5 V and ID = 10 A confirms robust conduction under logic-level drive, eliminating need for gate boosters in microcontroller-based designs.
What is the maximum PCB copper area required for 40 A continuous operation?
Per Infineon's datasheet Figure 2 and thermal characterization, 40 A continuous current is supported at TC = 25 °C using a single 6 cm² (e.g., 40 mm × 40 mm) copper pour on FR4 PCB with 70 µm thickness, vertical orientation in still air - no additional heatsink or thermal vias required.
Does BSZ0704LSATMA1 have integrated ESD protection?
No. The device does not include on-chip ESD protection diodes. Per datasheet Section 1.2, handling requires Class 1C ESD precautions (≤250 V HBM), and external TVS or RC snubbers are recommended on gate and drain lines in systems exposed to hot-plug or cable discharge events.
Can BSZ0704LSATMA1 replace SO-8 MOSFETs in existing layouts?
No. Its TSDSON-8 FL package has different footprint (3.3 mm × 3.3 mm vs. SO-8's 4.9 mm × 6.0 mm), pin assignment (8-drain + 3-source + 1-gate vs. standard SO-8 pinout), and soldering requirements (exposed thermal pad). Layout redesign and requalification are mandatory for drop-in replacement.
BSZ0704LSATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.6 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8 FL
BSZ0704LSATMA1 FAQ
1.How can I place an order for BSZ0704LSATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSZ0704LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSZ0704LSATMA1 reliable?
The price and inventory of BSZ0704LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0704LSATMA1 is usually 5 days.
3.What payment methods are accepted for BSZ0704LSATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0704LSATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSZ0704LSATMA1?
BSZ0704LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSZ0704LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSZ0704LSATMA1?
For technical support, including BSZ0704LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0704LSATMA1 requirements.
6.How does Aetrix verify that BSZ0704LSATMA1 is sourced from the original manufacturer or authorized distributors?
All BSZ0704LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0704LSATMA1 meets industry standards.
7.What is the process for return or replacement of BSZ0704LSATMA1?
All BSZ0704LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0704LSATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSZ0704LSATMA1 part is unused and in its original packaging.
Return procedure for BSZ0704LSATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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