Infineon Technologies BSZ076N06NS3GATMA1

Overview

BSZ076N06NS3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in DC/DC converters, featuring 60 V V_DS, 7.6 mΩ R_DS(on) max at V_GS = 10 V, 20 A continuous drain current at T_C = 25 °C, and 100% avalanche tested reliability for power stage designs in server VRMs and telecom POL modules.

For engineers reviewing the BSZ076N06NS3GATMA1 datasheet, BSZ076N06NS3GATMA1 pinout, BSZ076N06NS3GATMA1 application, or BSZ076N06NS3GATMA1 equivalent, key selection criteria include gate charge (Q_g = 37–50 nC), output capacitance (C_oss = 660–880 pF), thermal resistance (R_thJC = 1.8 K/W), and SOA robustness under pulsed load conditions.

Technical Context

This OptiMOS™ 3-generation power transistor uses trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (≈0.2) and 4.9 V gate plateau voltage support clean turn-on/turn-off transitions in hard-switched topologies.

The device integrates a fast-recovery body diode with t_rr = 36 ns and Q_rr = 32 nC at I_F = 20 A, enabling efficient synchronous rectification without external Schottky replacement in 12 V input buck converters.

Key Specifications

Pinout & Package

BSZ076N06NS3GATMA1 is housed in PG-TSDSON-8 (exposed drain pad), a thermally enhanced 3.3 mm × 3.3 mm surface-mount package with 0.65 mm pitch and bottom-side thermal pad for PCB copper area coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB076N06LGATMA1 and IRLHS6342TRPBF, BSZ076N06NS3GATMA1 delivers optimal balance of conduction loss, thermal capability, and avalanche ruggedness for 20 A continuous DC/DC power stages - making it preferred for server and telecom infrastructure where reliability and efficiency coexist.

Availability

BSZ076N06NS3GATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom point-of-load converters, and industrial motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for BSZ076N06NS3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial SMPS applications where low R_DS(on) and controlled switching behavior are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSZ076N06NS3GATMA1 has a specified operating junction temperature range of –55 °C to +150 °C. For continuous operation at rated 20 A drain current, thermal design must maintain T_j ≤ 150 °C using the 1.8 K/W R_thJC and appropriate PCB copper area, per JEDEC JESD51-2 guidelines.

Does this MOSFET require a gate resistor for safe switching?

Yes - a gate resistor (typically 2.2–10 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The device's 1 Ω intrinsic gate resistance and 37–50 nC total gate charge make external gate resistance essential for managing ringing and EMI in hard-switched applications above 200 kHz.

Can BSZ076N06NS3GATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing ~0.5%/°C) enables stable current sharing when paralleled. However, layout symmetry, matched gate drive paths, and individual source inductance control are mandatory to avoid dynamic imbalance, especially above 100 kHz switching.

Is the body diode suitable for synchronous rectification without external diode replacement?

Yes - the integrated body diode has t_rr = 36 ns and Q_rr = 32 nC at I_F = 20 A, enabling efficient synchronous rectification in buck and flyback topologies up to 500 kHz. Its performance exceeds standard silicon diodes, eliminating need for external Schottky replacement in most 12 V input designs.