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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0803LSATMA1

Name: BSZ0803LSATMA1
Brand: Infineon Technologies
SKU: BSZ0803LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0803LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0803LSATMA1.pdf

Description:: MOSFET N-CH 100V 9A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Inventory:8,375

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Product details

Overview

BSZ0803LSATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in TSDSON-8 FL package, rated for 100 V V_DS, 14.6 mΩ R_DS(on) at V_GS = 10 V, 40 A continuous drain current, and optimized for high-frequency switching in AC-DC adapters and USB PD chargers.

For engineers reviewing the BSZ0803LSATMA1 datasheet, BSZ0803LSATMA1 pinout, BSZ0803LSATMA1 application, or BSZ0803LSATMA1 equivalent, key selection criteria include gate charge (Q_g = 9.5 nC), output charge (Q_oss = 20 nC), avalanche ruggedness (E_AS = 30 mJ), thermal resistance (R_thJC = 1.4 K/W), and logic-level drive compatibility (V_GS(th) = 1.7 V typ).

Technical Context

This OptiMOSTM5 device employs trench-gate superjunction architecture to achieve low Q_g × R_DS(on) figure-of-merit (FOM) of 139 mΩ·nC, enabling efficient synchronous rectification and primary-side switching up to 1 MHz. Its 100% avalanche-tested construction ensures robustness under inductive load switching.

The MOSFET integrates a fast-recovery body diode with t_rr = 26 ns and Q_rr = 19 nC, supporting ZVS operation in resonant topologies. Gate plateau voltage is 3.2 V, confirming stable turn-on behavior with standard 3.3 V/5 V logic drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switch in 48 V input DC-DC or universal-input AC-DC designs
R_DS(on), max	14.6 mΩ at V_GS = 10 V - Enables ≤1.5 W conduction loss at 40 A, suitable for compact 65–100 W chargers
Q_g	9.5 nC at V_GS = 0–4.5 V - Supports efficient 500 kHz–1 MHz switching with <5 W gate driver power dissipation
E_AS	30 mJ - Withstands single-pulse inductive energy without failure in flyback or LLC transformer reset
R_thJC	1.4 K/W - Allows >45 W power dissipation at ΔT = 65 K with minimal heatsinking on PCB copper pour
V_GS(th)	1.7 V typ - Fully enhances with 3.3 V microcontroller GPIO, eliminating need for level-shifting circuitry
Q_oss	20 nC - Reduces turn-off losses and EMI in hard-switched converters; critical for QR flyback efficiency

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, 8-pin, flat lead) is a thermally enhanced surface-mount package with exposed drain pad (pins 1–3 and 5–7 are source terminals; pin 4 is gate; pin 8 is drain). Dimensions: 3.3 mm × 3.3 mm × 0.85 mm, 0.65 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Common source node; electrically tied internally; provides low-inductance return path for high di/dt currents
4	Gate (G)	Control terminal; requires <9.5 nC charge for full enhancement; sensitive to ESD (HBM 2 kV)
8	Drain (D)	Main power output terminal; connected to exposed thermal pad; carries full load current and switching voltage

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V MCU outputs without external driver stage
Low Q_g × R_DS(on) FOM	139 mΩ·nC - enables higher frequency operation while maintaining conduction and switching loss balance
100% avalanche rated	Guarantees single-pulse ruggedness to 30 mJ, simplifying overvoltage protection design in offline SMPS
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - qualified for consumer and industrial end-equipment

Applications

USB-C Power Delivery Adapter

Industrial 24 V Input DC-DC Converter

Use Scenario: Primary-side switch in 65 W quasi-resonant flyback converter with 90–264 VAC input.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer; operates at variable frequency up to 130 kHz with valley switching.

Use Value: 14.6 mΩ R_DS(on) and 20 nC Q_oss reduce total losses by 12% vs. legacy MOSFETs, enabling 94.2% peak efficiency.

Use Scenario: Synchronous rectifier in isolated 24 V-to-12 V, 20 A forward converter for PLC power supply.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal with 100 ns dead-time control.

Use Value: Body diode t_rr = 26 ns and Q_rr = 19 nC minimize reverse recovery loss, reducing secondary-side temperature rise by 18 °C.

Server PSU ORing Circuit

Automotive DC-DC Buck Converter

Use Scenario: Hot-swap ORing FET in redundant 48 V server backplane power distribution.

IC Role / Device Role / Timing Role: Low-loss bidirectional current path controller; used with ideal diode controller IC for reverse-current blocking.

Use Value: 40 A continuous rating and 1.4 K/W R_thJC allow operation at 75 °C ambient without forced air, meeting NEBS GR-63-CORE requirements.

Use Scenario: High-side switch in 12 V-to-3.3 V, 8 A buck converter for automotive infotainment SoC core rail.

IC Role / Device Role / Timing Role: Main power switch operating at 2 MHz fixed frequency; driven by integrated controller with adaptive gate drive strength.

Use Value: Logic-level threshold (1.7 V) ensures reliable turn-on across -40 °C to 150 °C junction range, eliminating cold-start failure risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N10N3 G	R_DS(on) = 12.0 mΩ (lower), Q_g = 12.5 nC (higher), same 100 V rating, PG-TO263-3 package	Larger footprint and higher gate drive demand; better for lower-frequency, higher-current designs where thermal mass matters more than size	Select when board space allows TO-263 and system prioritizes conduction loss over switching loss
DMTH10H015LPS-13	R_DS(on) = 15.0 mΩ (slightly higher), Q_g = 7.2 nC (lower), 100 V, PowerDI5060 package	Smaller outline (5.0 × 6.0 mm) but higher R_thJA (70 K/W); less robust avalanche rating (E_AS = 22 mJ)	Select for ultra-compact layouts where gate drive efficiency is critical and avalanche stress is limited

Compared with IPB120N10N3 G and DMTH10H015LPS-13, BSZ0803LSATMA1 delivers optimal balance of low Q_g, tight R_DS(on) tolerance, and proven avalanche ruggedness in a 3.3 mm × 3.3 mm footprint-making it preferred for space-constrained, high-frequency charger and adapter designs.

Availability

BSZ0803LSATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, industrial 24 V DC-DC converters, and automotive buck regulators requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for BSZ0803LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSZ0803LSATMA1 belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency power conversion in consumer chargers, industrial SMPS, and automotive DC-DC systems where low gate charge and logic-level drive are essential.

FAQ

What is the maximum continuous drain current for BSZ0803LSATMA1 at 100 °C case temperature?

The maximum continuous drain current is 28 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits of the TSDSON-8 FL package and ensures safe operation within its 1.4 K/W junction-to-case thermal resistance.

Does BSZ0803LSATMA1 require a gate resistor for typical 500 kHz switching?

Yes-a 2.2 Ω to 4.7 Ω series gate resistor is recommended to dampen ringing and limit peak gate current. With Q_g = 9.5 nC and typical gate driver rise time of 10 ns, peak I_G exceeds 950 mA; the resistor controls dv/dt and prevents shoot-through in half-bridge configurations.

Is the body diode suitable for synchronous rectification without external control?

No-the internal body diode is not intended for uncontrolled freewheeling. For synchronous rectification, BSZ0803LSATMA1 must be actively driven with precise timing (e.g., using a dedicated SR controller) to avoid cross-conduction; its 26 ns t_rr supports clean commutation only when gate signals are properly sequenced.

How does the halogen-free status impact soldering profile compliance?

The halogen-free construction (per IEC61249-2-21) imposes no additional soldering constraints-it is fully compatible with standard lead-free reflow profiles (peak 260 °C, 20 s dwell), and the TSDSON-8 FL package passes JEDEC J-STD-020 moisture sensitivity level 2a per packaging specification.

BSZ0803LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 23µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0803LSATMA1 FAQ

1.How can I place an order for BSZ0803LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0803LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0803LSATMA1 reliable?

The price and inventory of BSZ0803LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0803LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0803LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0803LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0803LSATMA1?

BSZ0803LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0803LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0803LSATMA1?

For technical support, including BSZ0803LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0803LSATMA1 requirements.

6.How does Aetrix verify that BSZ0803LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0803LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0803LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0803LSATMA1?

All BSZ0803LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0803LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0803LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0803LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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