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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0804LSATMA1

Name: BSZ0804LSATMA1
Brand: Infineon Technologies
SKU: BSZ0804LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0804LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0804LSATMA1.pdf

Description:: MOSFET N-CH 100V 11A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Inventory:6,615

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Product details

Overview

BSZ0804LSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency switching in 100 V power stages, featuring R_DS(on) = 9.6 mΩ at V_GS = 10 V, Q_G = 12 nC (0–4.5 V), and 100% avalanche-tested ruggedness. It is designed for compact, efficient DC-DC converters and USB PD chargers.

For engineers reviewing the BSZ0804LSATMA1 datasheet, BSZ0804LSATMA1 pinout, BSZ0804LSATMA1 application, or BSZ0804LSATMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance (R_thJC = 1.1 K/W), and logic-level drive compatibility with 4.5 V gate threshold.

Technical Context

This OptiMOSTM5 device employs trench-gate superjunction technology to achieve low conduction loss and fast switching with minimal gate drive energy. Its 8-pin TSDSON-8 FL package enables high-current handling (I_D = 40 A) and low-inductance source connections via three parallel source terminals.

The MOSFET integrates a robust body diode with t_rr = 34 ns and Q_rr = 29 nC, supporting synchronous rectification and hard-switched topologies. Gate plateau voltage is specified at 3.0 V, enabling stable turn-on under partial gate drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V input systems and 24 V industrial supplies.
R_DS(on), max	9.6 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A continuous drain current (T_C = 25 °C).
Q_G	12 nC (0–4.5 V) - Low gate charge supports >1 MHz switching in resonant LLC and GaN-assisted hybrid converters.
Q_OSS	30 nC - Output charge determines turn-off energy loss; critical for ZVS design margin in half-bridge configurations.
R_thJC	1.1 K/W - Junction-to-case thermal resistance allows direct heatsink mounting for high-power density layouts.
I_D	40 A @ T_C = 25 °C - Continuous drain rating supports 100 W–200 W power stages without forced air cooling.
V_GS(th)	1.1–2.3 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs.

Pinout & Package

BSZ0804LSATMA1 uses the PG-TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package: 3.3 mm × 3.3 mm footprint, 0.55 mm height, exposed drain pad on bottom for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Drain (D)	Five parallel drain terminals connected to internal die drain metallization and exposed bottom pad - used for high-current output path and thermal sinking.
4	Gate (G)	Single gate input terminal - low-inductance routing required to minimize ringing during fast dV/dt transitions.
5, 6	Source (S)	Two dedicated source terminals - provide Kelvin sensing path for accurate gate drive referencing and reduce source inductance in high-di/dt operation.

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	115 nC·mΩ - Enables higher efficiency than prior-generation MOSFETs in 500 kHz–2 MHz SMPS designs.
100% Unclamped Inductive Switching (UIS) Tested	E_AS = 82 mJ - Guarantees single-pulse avalanche robustness for overvoltage transients in motor drives and buck converters.
Logic-Level Gate Drive	V_GS(th) ≤ 2.3 V - Eliminates need for gate driver boost stages when controlled by 3.3 V/5 V MCUs or digital PWM controllers.
Halogen-Free & RoHS Compliant	IEC61249-2-21 compliant plating - meets environmental requirements for consumer, industrial, and automotive-grade end equipment.
Enhanced Body Diode Performance	t_rr = 34 ns, Q_rr = 29 nC - Reduces reverse recovery loss and EMI in synchronous rectifier and bidirectional converter applications.

Applications

USB-C Power Delivery Charger

Industrial 48 V DC-DC Converter

Use Scenario: Primary-side switch in 65 W–100 W flyback or active-clamp forward converters with variable output voltage (5–20 V).

IC Role / Device Role / Timing Role: High-side switching element with logic-level gate drive synchronized to PWM controller operating up to 300 kHz.

Use Value: Low Q_G and R_DS(on) reduce switching and conduction losses, enabling >94% peak efficiency and compact heatsink-free design.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V step-down converters for programmable logic controllers and I/O modules.

IC Role / Device Role / Timing Role: Low-V_GS(th) N-channel MOSFET replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: V_SD = 0.85 V at 20 A cuts forward drop by 40% vs. 0.3 A Schottky, improving light-load efficiency and reducing thermal stress.

Server VRM High-Side Switch

Brushless DC Motor Inverter Stage

Use Scenario: High-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per phase.

IC Role / Device Role / Timing Role: Fast-turning, low-R_DS(on) power stage paired with integrated driver ICs for sub-100 ns dead-time control.

Use Value: R_thJC = 1.1 K/W and 5-drain-terminal layout enable direct copper-plate heatsinking, sustaining >200 A pulsed current without thermal derating.

Use Scenario: Upper-leg switch in 24 V–48 V three-phase inverter driving BLDC motors in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: Avalanche-rated N-channel MOSFET handling commutation spikes and regenerative braking energy.

Use Value: E_AS = 82 mJ withstands repetitive inductive kickback without failure, eliminating need for external snubbers in cost-sensitive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N10N5	R_DS(on) = 7.0 mΩ @ 10 V, Q_G = 18 nC - lower R_DS(on) but higher gate charge increases switching loss above 500 kHz.	Better suited for low-frequency, high-current motor drives where conduction loss dominates.	Select when thermal budget is constrained at <100 kHz operation and gate drive strength exceeds 2 A peak.
STL220N10F7	R_DS(on) = 10.5 mΩ @ 10 V, Q_G = 9.5 nC - slightly higher R_DS(on) but lowest Q_G in class for ultra-high-frequency operation.	Preferred for >1 MHz resonant converters where gate drive power and EMI are critical constraints.	Choose when operating frequency exceeds 800 kHz and gate driver supply is limited to 3.3 V/low current.

Compared with IPB070N10N5 and STL220N10F7, BSZ0804LSATMA1 delivers optimal balance of R_DS(on), Q_G, and avalanche ruggedness for mid-frequency (200–600 kHz) charger and industrial DC-DC applications requiring both efficiency and reliability.

Availability

BSZ0804LSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery chargers, industrial 48 V DC-DC converters, and server VRM high-side switches requiring stable component supply and long-term production continuity.

Supply support for BSZ0804LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSZ0804LSATMA1 belongs to the OptiMOSTM5 family - engineered for high-efficiency, high-frequency power conversion in space-constrained consumer and industrial chargers, with emphasis on logic-level drive and thermal performance.

FAQ

What is the maximum continuous drain current for BSZ0804LSATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 39 A, as specified in Table 2 of the Rev. 2.0 datasheet. This rating assumes V_GS = 10 V and accounts for R_DS(on) increase with junction temperature. Derating curves in Diagram 2 confirm linear reduction from 40 A at 25 °C to 39 A at 100 °C.

Does BSZ0804LSATMA1 support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage range is 1.1 V to 2.3 V, and it achieves R_DS(on) ≤ 13.5 mΩ at V_GS = 4.5 V and I_D = 10 A (Table 4). At 3.3 V, it operates in linear region with higher R_DS(on); full enhancement requires ≥4.5 V, making it compatible with 5 V logic or level-shifted 3.3 V drive.

How is the TSDSON-8 FL package thermally mounted in PCB layout?

The TSDSON-8 FL package features an exposed drain pad on the bottom surface, which must be soldered to a large copper pour (≥6 cm²) on the PCB's inner or bottom layer. Thermal vias (≥8×0.3 mm) should connect the pad to internal ground or power planes to achieve R_thJA ≈ 60 K/W as specified in Table 3.

Is BSZ0804LSATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its low Q_rr (29 nC) and fast t_rr (34 ns), combined with low V_SD (0.85 V), make it effective for secondary-side synchronous rectification. The dual-source terminals (pins 5 and 6) support Kelvin sensing to maintain precise gate control timing relative to drain voltage transitions.

BSZ0804LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0804LSATMA1 FAQ

1.How can I place an order for BSZ0804LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0804LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0804LSATMA1 reliable?

The price and inventory of BSZ0804LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0804LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0804LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0804LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0804LSATMA1?

BSZ0804LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0804LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0804LSATMA1?

For technical support, including BSZ0804LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0804LSATMA1 requirements.

6.How does Aetrix verify that BSZ0804LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0804LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0804LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0804LSATMA1?

All BSZ0804LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0804LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0804LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0804LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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