Infineon Technologies BSZ0909LSATMA1

Overview

BSZ0909LSATMA1 from Infineon Technologies is an N-channel OptiMOSTM 5 Power-MOSFET rated for 30 V drain-source voltage, with R_DS(on) of 3.5 mΩ at V_GS = 4.5 V and 3.0 mΩ at V_GS = 10 V, delivering 40 A continuous drain current at T_C = 25 °C. It is optimized for high-efficiency USB-PD and wireless charging power stages in compact AC/DC adapters.

For engineers reviewing the BSZ0909LSATMA1 datasheet, BSZ0909LSATMA1 pinout, BSZ0909LSATMA1 application, or BSZ0909LSATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V logic-level drive, thermal resistance (R_thJC = 2.6 K/W), SOA robustness, gate charge profile (Q_g = 13 nC @ 4.5 V), and integrated body diode performance (V_SD = 0.83 V @ 20 A).

Technical Context

This MOSFET employs Infineon's OptiMOSTM 5 trench-gate process to achieve ultra-low on-resistance while maintaining fast switching (t_d(on) = 4.2 ns, t_f = 3.6 ns) and low gate charge (Q_gd = 4.0 nC). Its design targets synchronous rectification and high-frequency DC-DC conversion where conduction loss minimization at 4.5 V gate drive is critical.

The device features a thermally enhanced TSDSON-8 FL package with exposed drain pad, enabling direct PCB copper area cooling. Its body diode exhibits Q_rr = 15 nC and V_SD = 0.83 V at 20 A, supporting efficient reverse recovery in buck and LLC topologies.

Key Specifications

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package with exposed drain pad on bottom surface for thermal conduction. 8-terminal surface-mount device with dual-side cooling capability via PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB090N03L G and SI7157DP-T1-GE3, BSZ0909LSATMA1 delivers superior 4.5 V drive capability, lower thermal resistance, and tighter gate charge control-making it the optimal choice for compact, high-efficiency USB-PD and wireless charging systems where gate drive voltage and thermal budget are constrained.

Availability

BSZ0909LSATMA1 is available at Aetrix Electronics and suitable for USB-PD fast charging adapters, wireless charging transmitters, and industrial point-of-load DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for BSZ0909LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-frequency, high-efficiency power conversion in consumer and industrial SMPS, emphasizing low R_DS(on) at logic-level gate drive and robust thermal performance in compact packages.

FAQ

Is BSZ0909LSATMA1 suitable for synchronous rectification in 100 kHz–1 MHz LLC resonant converters?

Yes. With t_d(on) = 4.2 ns, t_f = 3.6 ns, Q_gd = 4.0 nC, and low C_oss (600 pF), it supports efficient zero-voltage switching (ZVS) operation across this frequency range. Its 3.5 mΩ R_DS(on) at 4.5 V ensures minimal conduction loss even with typical LLC controller gate drive.

What is the maximum PCB copper area required to maintain T_J ≤ 125 °C at 40 A continuous current?

Per datasheet Figure 3 and Table 3, a 6 cm² single-layer copper area (70 µm thick) on FR4 PCB is sufficient to achieve R_thJA = 60 K/W. At 40 A and 3.5 mΩ, power dissipation is ~5.6 W; with ΔT = 100 K (125 °C – 25 °C), this copper area maintains safe junction temperature under still-air conditions.

Does BSZ0909LSATMA1 have avalanche ruggedness rated for repetitive operation?

No. The datasheet specifies only single-pulse avalanche ratings: I_AS = 20 A and E_AS = 70 mJ. It is not characterized for repetitive avalanche stress. Designers must ensure SOA compliance and use snubbers or clamp circuits if voltage transients exceed 30 V.

Can BSZ0909LSATMA1 be used in parallel configurations for higher current handling?

Yes. Its positive temperature coefficient of R_DS(on) (see Diagram 9) ensures inherent current sharing. Layout symmetry, matched gate drive paths, and Kelvin source connections are required. Derating to 35 A per device is recommended for 2-device parallel operation at T_C = 100 °C.