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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0911LSATMA1

Name: BSZ0911LSATMA1
Brand: Infineon Technologies
SKU: BSZ0911LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0911LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0911LSATMA1.pdf

Description:: MOSFET N-CH 30V 12A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSZ0911LSATMA1 from Infineon Technologies is an N-channel OptiMOSTM 5 Power-MOSFET rated for 30 V drain-source voltage, 40 A continuous drain current at T_C = 25 °C, and featuring R_DS(on) of 7.0 mΩ @ V_GS = 10 V and 9.0 mΩ @ V_GS = 4.5 V. It is optimized for high-efficiency USB-PD and wireless charging power stages in compact adapters.

For engineers reviewing the BSZ0911LSATMA1 datasheet, BSZ0911LSATMA1 pinout, BSZ0911LSATMA1 application, or BSZ0911LSATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, superior thermal resistance (R_thJC = 4.9 K/W), and validated performance in synchronous rectification and high-frequency DC-DC converters.

Technical Context

This MOSFET employs Infineon's OptiMOSTM 5 process, delivering enhanced conduction efficiency and fast switching with Q_g = 5.2 nC (0–4.5 V) and Q_gd = 1.7 nC. Its low gate plateau voltage (2.9 V) enables robust turn-on under partial gate drive conditions common in adaptive chargers.

The device integrates a low-V_SD body diode (0.89 V typ @ 20 A, T_j = 25 °C) with Q_rr = 10 nC, supporting efficient synchronous FET operation and reducing reverse recovery losses in buck and flyback topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and USB-PD 3.0 secondary-side regulation.
R_DS(on) @ V_GS = 4.5 V	9.0 mΩ - Enables <1.8 W conduction loss at 15 A, critical for thermally constrained adapter PCBs.
I_D, cont @ T_C = 25 °C	40 A - Supports high-current synchronous rectification in 65–100 W USB-C chargers without external heatsinking.
R_thJC	4.9 K/W - Allows direct thermal coupling to PCB copper pour, enabling >25 W dissipation with minimal temperature rise.
Q_gd	1.7 nC - Limits Miller-induced switching delay, supporting >1 MHz operation in GaN-assisted hybrid converters.
V_GS(th)	1.2–2.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V controller outputs.
Q_rr	10 nC - Reduces diode recovery loss and EMI in discontinuous conduction mode (DCM) flyback designs.

Pinout & Package

BSZ0911LSATMA1 is housed in a PG-TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package - a 3.3 mm × 3.3 mm, 0.65 mm pitch, thermally enhanced surface-mount package with exposed drain pad on bottom for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (common source connection)	All eight pins are internally connected to the drain terminal and the exposed thermal pad - forms primary current path and main thermal interface.
S (Source)	Source (pins 1–3 and 5–7)	Source terminals are distributed across multiple pins to reduce parasitic inductance and improve current sharing in high-di/dt applications.
G (Gate)	Gate (pin 4)	Single dedicated gate pin minimizes gate loop inductance; requires tight layout with local gate resistor and low-inductance driver path.

Key Features

Feature	Design Value
Optimized R_DS(on) vs. Q_g trade-off	9.0 mΩ @ 4.5 V with only 5.2 nC total gate charge - enables high efficiency at light-to-moderate loads in variable-frequency adapters.
Low thermal resistance (R_thJC)	4.9 K/W - permits >25 W power handling on 6 cm² PCB copper area without forced air, simplifying thermal design.
Robust body diode	V_SD = 0.89 V @ 20 A, Q_rr = 10 nC - supports reliable synchronous rectification and reduces snubber requirements in flyback converters.
Pb-free, RoHS & halogen-free	Compliant with IEC61249-2-21 - meets global environmental regulations for consumer electronics and portable chargers.

Applications

USB-PD Fast Charging Adapter

Wireless Charging Transmitter

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD adapter with active clamp flyback topology.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 94%.

Use Value: 9.0 mΩ R_DS(on) at 4.5 V enables full-load efficiency gain of 1.2–1.8% versus 15 V Schottky, directly extending thermal margin.

Use Scenario: Half-bridge switching stage in 15 W Qi-compliant wireless power transmitter operating at 110–205 kHz.

IC Role / Device Role: High-speed, low-loss power switch in resonant inverter driving the transmit coil.

Use Value: 1.7 nC Q_gd and 2.4 ns fall time reduce switching loss by ~35% versus legacy 30 V MOSFETs, improving thermal stability at full power.

Industrial DC-DC Converter

Portable Power Bank

Use Scenario: Input-side hot-swap and OR-ing FET in 24 V industrial DC-DC module with redundant input rails.

IC Role / Device Role: N-channel load switch controlling power path integrity and fault isolation.

Use Value: 30 V rating and 40 A current capability support 24 V/30 A input rails; low V_GS(th) ensures compatibility with 3.3 V microcontroller control logic.

Use Scenario: Output-stage power switch in dual-cell Li-ion power bank with programmable 5–20 V USB-PD output.

IC Role / Device Role: High-efficiency buck-boost switching FET in bidirectional power conversion path.

Use Value: 4.9 K/W R_thJC allows sustained 15 A output without derating in space-constrained 100 cm³ enclosures, maintaining >92% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB091N03L3 G	R_DS(on) = 9.1 mΩ @ 4.5 V; R_thJC = 5.2 K/W; Q_g = 6.1 nC	Slightly higher gate charge and thermal resistance - less suitable for >1 MHz switching or ultra-thin PCBs	Preferred where footprint compatibility with TO-263-3 is required; same die size but different leadframe.
SISS78LDN-T1-GE3	R_DS(on) = 8.3 mΩ @ 4.5 V; R_thJC = 4.5 K/W; Q_gd = 1.5 nC	Better Q_gd and thermal resistance, but lower ID rating (35 A) and no JEDEC qualification for automotive stress	Best for high-frequency, thermally aggressive designs where JEDEC qualification is not mandatory.

Compared with IPB091N03L3 G and SISS78LDN-T1-GE3, BSZ0911LSATMA1 offers the best balance of JEDEC-qualified reliability, low Q_gd-to-R_DS(on) ratio, and proven performance in USB-PD reference designs - making it the preferred choice for certified consumer power products.

Availability

BSZ0911LSATMA1 is available at Aetrix Electronics and suitable for USB-PD fast charging adapters, wireless power transmitters, and industrial DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSZ0911LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

BSZ0911LSATMA1 belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-density AC-DC and DC-DC power conversion in consumer and industrial chargers, adapters, and portable power systems.

FAQ

Is BSZ0911LSATMA1 suitable for synchronous rectification in flyback converters?

Yes. With its 9.0 mΩ R_DS(on) @ 4.5 V, low Q_rr (10 nC), and 0.89 V V_SD, BSZ0911LSATMA1 is qualified for secondary-side synchronous rectification in flyback converters up to 100 W. Its gate threshold range (1.2–2.0 V) ensures reliable turn-on with standard SR controller outputs.

What is the maximum PCB copper area required for thermal management?

Per Infineon's datasheet, a 6 cm² (40 mm × 40 mm) single-layer 70 µm copper area on FR4 PCB provides R_thJA = 60 K/W. For higher power, the exposed drain pad must be soldered to this copper pour; no additional heatsink is needed below 25 W continuous dissipation.

Does BSZ0911LSATMA1 support 3.3 V gate drive in low-power modes?

Yes. Its V_GS(th) range (1.2–2.0 V) and confirmed R_DS(on) of 9.0 mΩ @ 4.5 V - with typical on-resistance still <15 mΩ at 3.3 V per characterization curves - make it viable for partial-gate-drive operation in burst-mode or light-load optimization schemes.

How does BSZ0911LSATMA1 compare to previous OptiMOSTM generations in switching speed?

OptiMOSTM 5 reduces Q_gd by ~25% versus OptiMOSTM 4 (e.g., BSZ0902LS), achieving 1.7 nC vs. 2.3 nC. This cuts turn-off delay (t_d(off) = 12 ns) and improves hard-switching efficiency in 500 kHz–2 MHz converters without increasing gate drive complexity.

BSZ0911LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0911LSATMA1 FAQ

1.How can I place an order for BSZ0911LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0911LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0911LSATMA1 reliable?

The price and inventory of BSZ0911LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0911LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0911LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0911LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0911LSATMA1?

BSZ0911LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0911LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0911LSATMA1?

For technical support, including BSZ0911LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0911LSATMA1 requirements.

6.How does Aetrix verify that BSZ0911LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0911LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0911LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0911LSATMA1?

All BSZ0911LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0911LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0911LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0911LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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