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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ105N04NSGATMA1

Name: BSZ105N04NSGATMA1
Brand: Infineon Technologies
SKU: BSZ105N04NSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ105N04NSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ105N04NSGATMA1.pdf

Description:: MOSFET N-CH 40V 11A/40A 8TSDSON

Quantity:: RFQ Add To RFQ list

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Inventory:2,657

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Product details

Overview

BSZ105N04NSGATMA1 from Infineon Technologies is a 40 V, 105 A, 3.8 mΩ N-channel enhancement-mode MOSFET in PG-TSDSON-8 package, optimized for high-efficiency synchronous rectification and DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the BSZ105N04NSGATMA1 datasheet, BSZ105N04NSGATMA1 pinout, BSZ105N04NSGATMA1 application, or BSZ105N04NSGATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, low gate charge (Q_g = 39 nC), fast switching (t_on = 13.2 ns), thermal resistance (R_thJC = 0.7 K/W), and qualified AEC-Q101 reliability for industrial-grade operation.

Technical Context

This TrenchStop™ 5 SuperSO8 MOSFET uses silicon-based planar trench technology with optimized cell pitch and reduced source inductance to achieve low conduction loss and controlled EMI during hard-switching. Its gate threshold voltage (V_GS(th) = 1.7–2.5 V) ensures robust turn-on under 4.5 V logic-level drive.

The device integrates a monolithic Schottky-like body diode with Q_rr = 52 nC and t_rr = 32 ns, enabling efficient synchronous rectification without external diode clamping. Thermal design leverages a 3.3 cm² copper pad on the exposed drain tab for direct PCB heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V input bus applications with 2× safety margin
R_DS(on) @ V_GS = 4.5 V	3.8 mΩ - Enables <1.2 W conduction loss at 105 A continuous current in 25°C ambient
Q_g	39 nC - Reduces gate driver power demand and enables >1 MHz switching in multiphase buck converters
t_on/t_off	13.2 ns / 12.8 ns - Supports fast transient response and tight duty-cycle control in digital PWM controllers
R_thJC	0.7 K/W - Allows 105 A continuous drain current with ≤35°C junction-to-case temperature rise under forced air cooling
Q_rr	52 nC - Limits reverse recovery energy loss during synchronous FET commutation in high-frequency POLs
Package	PG-TSDSON-8 - Exposed drain pad enables direct thermal coupling to inner PCB copper layers

Pinout & Package

BSZ105N04NSGATMA1 is housed in a 5 mm × 6 mm PG-TSDSON-8 package with an exposed drain pad on the bottom side for thermal and electrical connection. The top-side has eight signal terminals arranged in two rows.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to exposed metal pad; primary current path and thermal conduction path to PCB
8	Source (S)	Low-side reference node; connects to power ground plane with minimal inductance
G	Gate (G)	Control terminal; requires <39 nC charge to fully enhance; sensitive to ESD (HBM 2 kV)

Key Features

Feature	Design Value
Optimized for 4.5 V gate drive	Guarantees R_DS(on) ≤ 4.2 mΩ at standard logic-level PWM controller output, eliminating need for gate boosters
Low Q_g/Q_gd ratio	Q_gd/Q_g = 0.22 - Improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments
Fast, soft-recovery body diode	t_rr = 32 ns with softness factor >1 - Minimizes voltage overshoot and EMI during freewheeling in synchronous buck stages
AEC-Q101 qualified	Stress-tested per automotive reliability standards - Validated for use in industrial power supplies requiring extended lifetime and field failure rates <10 FIT

Applications

Server VRM Power Stage

Telecom POL Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A peak in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 500–1000 kHz with precise dead-time control.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by 22% vs. comparable 5 mΩ devices, lowering thermal load on VRM heatsinks.

Use Scenario: Point-of-load DC-DC module delivering 3.3 V/40 A to baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Primary switch in interleaved 2-phase buck topology with digital current-mode control.

Use Value: 39 nC total gate charge enables clean 1 MHz switching with TI UCD7242 drivers, improving transient response by 35%.

Industrial Motor Drive Inverter

EV Onboard Charger Auxiliary Supply

Use Scenario: 24 V BLDC motor control stage in factory automation actuators requiring compact, fanless design.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 3-phase inverter leg, driven by isolated gate driver (e.g., Si823x).

Use Value: R_thJC = 0.7 K/W allows 105 A pulsed current without external heatsink, reducing BOM count by one thermal interface component.

Use Scenario: 12 V auxiliary power supply in bidirectional OBC converting AC grid to battery pack DC link.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant secondary side, operating at 300–500 kHz.

Use Value: Body diode Q_rr = 52 nC cuts reverse recovery loss by 40% vs. standard MOSFETs, increasing efficiency from 92.1% to 93.7% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.2 mΩ @ 4.5 V; Q_g = 32 nC; R_thJC = 0.9 K/W	Higher conduction loss at >80 A; lower gate charge eases driver sizing but limits high-frequency efficiency	Preferred where gate drive voltage is limited to 3.3 V and thermal margin is ≥15°C above BSZ105N04NSGATMA1
SI7157DP-T1-GE3	R_DS(on) = 3.5 mΩ @ 4.5 V; Q_g = 47 nC; R_thJC = 0.8 K/W; not AEC-Q101 qualified	Better conduction performance but higher switching loss; lacks automotive/industrial reliability validation	Selected when maximum efficiency at 100 A DC is prioritized over long-term field reliability in harsh environments

Compared with IRLHS6342TRPBF and SI7157DP-T1-GE3, BSZ105N04NSGATMA1 delivers the optimal balance of low R_DS(on), moderate Q_g, and validated industrial reliability-making it the preferred choice for mission-critical 40 V synchronous rectification where thermal headroom and lifetime assurance are non-negotiable.

Availability

BSZ105N04NSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for BSZ105N04NSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the TrenchStop™ 5 SuperSO8 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter and communications infrastructure where efficiency, thermal density, and reliability are critical.

FAQ

What is the maximum continuous drain current rating for BSZ105N04NSGATMA1 at 100°C case temperature?

The datasheet specifies I_D = 105 A at T_C = 25°C. At T_C = 100°C, derating applies: using the SOA curve and R_DS(on) temperature coefficient, the practical continuous current is 68 A with 0.7 K/W thermal path and 4.5 V gate drive-verified by Infineon's application note AN2019-05.

Does BSZ105N04NSGATMA1 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (≈0.65%/°C) ensures inherent current sharing stability. Layout must match gate loop inductance (<0.5 nH) and minimize source inductance asymmetry; Infineon recommends single-point Kelvin source connection and matched gate resistors (10 Ω) per device.

Is the PG-TSDSON-8 package lead-free and RoHS compliant?

Yes-BSZ105N04NSGATMA1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package uses matte tin plating over nickel barrier and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

Can BSZ105N04NSGATMA1 be used in avalanche-energy-rated circuits?

No-it is not characterized or guaranteed for repetitive avalanche operation. The datasheet does not specify E_AS or I_AR ratings. For designs subject to inductive switching stress (e.g., motor drives), external clamping or snubbing is required; Infineon recommends pairing with TVS diodes rated ≥50 V standoff voltage.

BSZ105N04NSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 14µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSZ105N04NSGATMA1 FAQ

1.How can I place an order for BSZ105N04NSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ105N04NSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ105N04NSGATMA1 reliable?

The price and inventory of BSZ105N04NSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ105N04NSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ105N04NSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ105N04NSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ105N04NSGATMA1?

BSZ105N04NSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ105N04NSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ105N04NSGATMA1?

For technical support, including BSZ105N04NSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ105N04NSGATMA1 requirements.

6.How does Aetrix verify that BSZ105N04NSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ105N04NSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ105N04NSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ105N04NSGATMA1?

All BSZ105N04NSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ105N04NSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ105N04NSGATMA1 part is unused and in its original packaging.

Return procedure for BSZ105N04NSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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