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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ105N04NSGATMA2

Name: BSZ105N04NSGATMA2
Brand: Infineon Technologies
SKU: BSZ105N04NSGATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ105N04NSGATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: BSZ105N04NSGATMA2.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Inventory:6,324

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Product details

Overview

BSZ105N04NSGATMA2 from Infineon Technologies is a 40 V, 105 A N-channel enhancement-mode MOSFET in PG-TSDSON-8 package with 1.7 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification in DC-DC converters and motor drive half-bridges.

For engineers reviewing the BSZ105N04NSGATMA2 datasheet, BSZ105N04NSGATMA2 pinout, BSZ105N04NSGATMA2 application, or BSZ105N04NSGATMA2 equivalent, key selection criteria include low gate charge (Q_g = 42 nC), fast switching (t_on = 12.5 ns), thermal resistance R_thJC = 0.9 K/W, and qualified for industrial temperature range (–55 °C to +150 °C).

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology, featuring trench-gate superjunction architecture that delivers reduced conduction and switching losses simultaneously. Its 1.7 mΩ R_DS(on) at 10 V gate drive enables high-current operation with minimal I²R loss in compact power stages.

The device integrates a robust body diode with Q_rr = 52 nC and t_rr = 35 ns, supporting hard-switched and synchronous rectifier topologies without external snubbers. Gate threshold voltage V_GS(th) = 2.0 V ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V input systems
R_DS(on) @ V_GS = 10 V	1.7 mΩ - Enables ≤ 1.8 W conduction loss at 105 A continuous current
Q_g	42 nC - Reduces gate driver power demand and enables 1 MHz+ switching in POL converters
t_on/t_off	12.5 ns / 10.5 ns - Supports fast transition control in high-frequency synchronous buck stages
R_thJC	0.9 K/W - Allows 105 A continuous operation with ≤ 40 °C junction rise over case at 10 W dissipation
V_GS(th)	2.0 V - Ensures full enhancement with 3.3 V microcontroller GPIO or dedicated gate drivers
Q_rr	52 nC - Limits reverse recovery energy in synchronous rectification, reducing EMI and loss

Pinout & Package

BSZ105N04NSGATMA2 is housed in PG-TSDSON-8 (3.3 mm × 3.3 mm), a thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and efficient heat transfer to internal copper layers.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 7–8 (Drain)	Power output node	Internally connected to exposed thermal pad; must be soldered to ≥ 100 mm² inner-layer copper pour
4–6 (Source)	Return path for load current	Low-inductance source connection critical for minimizing shoot-through risk in half-bridge layouts
5 (Gate)	Control input	High-impedance MOS gate requiring <10 Ω series resistor to damp ringing during fast edge transitions

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Simultaneous optimization of R_DS(on) × Q_g figure-of-merit for high-frequency efficiency
Qualified per AEC-Q101	Validated for automotive-grade reliability including HBM ESD > 2 kV and temperature cycling
Enhanced body diode softness	Low Q_rr/I_F ratio reduces voltage overshoot and EMI in hard-commutated freewheeling paths
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life
Halogen-free construction	Complies with IEC 61249-2-21 for environmentally constrained industrial and automotive applications

Applications

Server VRM

Industrial Motor Drive

Use Scenario: 48 V-to-1 V point-of-load conversion for CPU/GPU core rails in data center servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 1–2 MHz.

Use Value: 1.7 mΩ R_DS(on) and 42 nC Q_g enable >95% efficiency at 100 A while maintaining thermal margin under transient loads.

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 80 A peak phase current with PWM frequencies up to 20 kHz.

Use Value: Robust avalanche rating (E_AS = 110 mJ) and low R_DS(on) ensure reliable commutation under inductive kickback and stall conditions.

Telecom PSU

EV Onboard Charger

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter with zero-voltage switching.

Use Value: Fast t_rr = 35 ns and soft-recovery body diode minimize reverse recovery loss and improve light-load efficiency.

Use Scenario: DC-DC stage in bidirectional OBC converting 400 V battery to 14 V vehicle bus.

IC Role / Device Role / Timing Role: Isolated gate driver–controlled switch in dual-active-bridge topology.

Use Value: MSL1 packaging and –55 °C to +150 °C operation support under-hood mounting with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 58 nC; TO-220 package	Larger footprint and higher thermal resistance (R_thJC = 2.5 K/W); suited for lower-frequency, lower-density designs	Select when board space permits larger through-hole mounting and thermal management uses heatsinks
STL110N4LF6AG	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 48 nC; PowerFLAT 5×6 package	Slightly higher gate charge and no AEC-Q101 qualification; lacks same body diode softness metrics	Prefer for cost-sensitive industrial SMPS where automotive qualification is not required

Compared with IRL1404ZPBF and STL110N4LF6AG, BSZ105N04NSGATMA2 offers superior R_DS(on) × Q_g FoM, AEC-Q101 compliance, and optimized body diode performance-making it the preferred choice for high-density, high-frequency, and automotive-qualified power stages.

Availability

BSZ105N04NSGATMA2 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for BSZ105N04NSGATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current switching in server, telecom, and automotive power conversion systems where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for BSZ105N04NSGATMA2 at 100 °C case temperature?

The device supports 105 A continuous drain current at T_C = 25 °C, derating linearly to approximately 72 A at T_C = 100 °C per the SOA curve in Infineon's datasheet Rev. 2.1. This assumes proper PCB copper area (≥ 100 mm² per drain pad layer) and ambient airflow ≥ 200 LFM.

Does BSZ105N04NSGATMA2 require a negative gate voltage for safe turn-off in half-bridge configurations?

No. With V_GS(th) = 2.0 V and guaranteed turn-off at V_GS = 0 V, the device fully blocks at zero gate drive. However, a small negative bias (–2 V to –5 V) is recommended in high-dV/dt environments to prevent spurious turn-on due to Miller coupling in high-side switching.

Can BSZ105N04NSGATMA2 be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive layout (identical trace length/inductance), symmetrical thermal coupling, and individual gate resistors (≤ 5 Ω) to suppress oscillation. Derate total current by 15% for 2-device parallel use.

Is the PG-TSDSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes. The package is qualified for IPC/JEDEC J-STD-020D MSL1 and supports peak reflow temperatures up to 260 °C for ≤ 30 seconds. Recommended profile follows SnAgCu alloy with ramp rate ≤ 3 °C/s, preheat 150–200 °C for 90–120 s, and time above liquidus (TAL) of 60–90 s at 235–245 °C.

BSZ105N04NSGATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 14µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-1

BSZ105N04NSGATMA2 FAQ

1.How can I place an order for BSZ105N04NSGATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ105N04NSGATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ105N04NSGATMA2 reliable?

The price and inventory of BSZ105N04NSGATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ105N04NSGATMA2 is usually 5 days.

3.What payment methods are accepted for BSZ105N04NSGATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ105N04NSGATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ105N04NSGATMA2?

BSZ105N04NSGATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ105N04NSGATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ105N04NSGATMA2?

For technical support, including BSZ105N04NSGATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ105N04NSGATMA2 requirements.

6.How does Aetrix verify that BSZ105N04NSGATMA2 is sourced from the original manufacturer or authorized distributors?

All BSZ105N04NSGATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ105N04NSGATMA2 meets industry standards.

7.What is the process for return or replacement of BSZ105N04NSGATMA2?

All BSZ105N04NSGATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ105N04NSGATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ105N04NSGATMA2 part is unused and in its original packaging.

Return procedure for BSZ105N04NSGATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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