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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ120P03NS3EGATMA1

Name: BSZ120P03NS3EGATMA1
Brand: Infineon Technologies
SKU: BSZ120P03NS3EGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ120P03NS3EGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ120P03NS3EGATMA1.pdf

Description:: MOSFET P-CH 30V 11A/40A 8TSDSON

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Product details

Overview

BSZ120P03NS3EGATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in PG-TSDSON-8 package, rated for -30 V V_DS, 12 mΩ R_DS(on) at V_GS = -10 V and I_D = -20 A, with 150 °C maximum junction temperature and ESD protection per JESD22-A114 Class 2 (>2 kV). It serves as a high-efficiency load switch in notebook battery management circuits.

For engineers reviewing the BSZ120P03NS3EGATMA1 datasheet, BSZ120P03NS3EGATMA1 pinout, BSZ120P03NS3EGATMA1 application, or BSZ120P03NS3EGATMA1 equivalent, key selection criteria include its low R_DS(on) at logic-level gate drive (-6 V), robust avalanche energy (E_AS = 55 mJ), thermal resistance (R_thJC = 2.4 K/W), and halogen-free, RoHS-compliant construction.

Technical Context

This device operates as a single P-channel power switch optimized for synchronous rectification and high-side load switching in portable computing power rails. Its gate threshold voltage range (-3.1 to -1.9 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers, while the 2240–3360 pF input capacitance supports predictable switching timing under controlled gate resistance (R_G = 2.2 Ω).

The integrated body diode exhibits t_rr = 47 ns and Q_rr = 55 nC at T_j = 25 °C, enabling efficient reverse recovery in buck converter freewheeling paths. Thermal design is supported by a low junction-to-case resistance (2.4 K/W) and validated operation up to 150 °C ambient-referenced case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail switching
R_DS(on) max	12 mΩ @ V_GS = -10 V, I_D = -20 A - Enables ≤2.4 W conduction loss at 20 A load current
I_D continuous	-40 A @ T_C = 25 °C - Supports high-current battery discharge paths in ultrabooks
E_AS	55 mJ - Withstands single-pulse inductive energy without failure during load dump events
R_thJC	2.4 K/W - Allows direct heatsinking to PCB copper for compact thermal design
Q_g total	30–45 nC - Determines gate driver current requirement (~1.5–2.25 A peak for 20 ns rise time)
t_rr	47 ns - Limits reverse recovery losses in DC-DC converters operating up to ~1 MHz

Pinout & Package

Package: PG-TSDSON-8 (exposed drain pad, 3.3 mm × 3.3 mm footprint, 0.9 mm height), lead-free and halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Power Drain / Thermal Sink	Eight parallel internal drain connections tied to exposed copper pad - primary thermal path and current return
Source (pins 1–3, 5–7)	Source Terminal	Multiple source bond wires distributed across package edges - reduces source inductance for fast switching
Gate (pin 8)	Control Input	Single dedicated gate terminal - isolated from drain/source to prevent Miller-induced turn-on

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS = -6 V - eliminates need for charge pump in 3.3 V microcontroller systems
Junction temperature rating	150 °C continuous operation - enables use in thermally constrained notebook chassis without derating
ESD protection	JESD22-A114 Class 2 (>2 kV HBM) - withstands handling and board assembly without external protection
Avalanche ruggedness	Rated for repetitive single-pulse avalanche (E_AS = 55 mJ) - improves reliability in inductive load switching
Low gate charge	Q_gd = 5–8 nC - minimizes Miller plateau duration and switching losses in high-frequency SMPS

Applications

Battery Protection Circuit

Notebook Power Delivery

Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs for ultrabooks.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main battery discharge path.

Use Value: 12 mΩ R_DS(on) limits voltage drop to <120 mV at 10 A, preserving battery runtime and reducing thermal stress on PCB.

Use Scenario: System power rail enable/disable during sleep/wake transitions in Intel Core platform designs.

IC Role / Device Role / Timing Role: Controlled high-side switch for 3.3 V or 5 V auxiliary rails.

Use Value: Gate threshold of -2.5 V typical ensures clean turn-on with 3.3 V GPIO, eliminating level-shifter complexity.

USB-C Power Path

Hot-Swap Controller Interface

Use Scenario: Bidirectional power path control in USB-C PD sink applications with programmable current limiting.

IC Role / Device Role / Timing Role: Low-loss pass element in active OR-ing configuration with external current sense.

Use Value: 40 A continuous rating and 160 A pulsed capability support 60 W+ USB-C charging without paralleling.

Use Scenario: Inrush current limiting and fault isolation in industrial docking stations with hot-plug peripherals.

IC Role / Device Role / Timing Role: Protected high-side switch managed by TI TPS25982 or similar hot-swap controller.

Use Value: ESD Class 2 rating and 150 °C operation ensure robustness against repeated insertion transients and enclosure heating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 21 mΩ @ -10 V; higher Q_g (52 nC); TO-252 package	Larger footprint and higher thermal resistance (R_thJA ≈ 62 K/W vs. 60 K/W)	Preferred where legacy TO-252 layout exists and lower cost outweighs efficiency loss
DMG1012TQ	R_DS(on) = 14.5 mΩ @ -4.5 V; smaller 2×2 mm WDFN; no avalanche rating	Lower current rating (I_D = -3.5 A) and unqualified for repetitive avalanche	Suitable only for low-power always-on rails where space is critical and surge immunity is not required

Compared with IRF7425PBF and DMG1012TQ, BSZ120P03NS3EGATMA1 delivers superior conduction efficiency at high current, proven avalanche ruggedness for system-level reliability, and a thermally optimized 3.3×3.3 mm package-making it optimal for space-constrained, high-reliability notebook power switches.

Availability

BSZ120P03NS3EGATMA1 is available at Aetrix Electronics and suitable for notebook battery management, USB-C power delivery, and industrial hot-swap applications requiring stable component supply and long-term lifecycle support.

Supply support for BSZ120P03NS3EGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ P3 product line, engineered specifically for high-efficiency, low-voltage P-channel switching in portable computing and battery-powered systems demanding minimal R_DS(on) and robust thermal performance.

FAQ

What is the maximum safe operating temperature for BSZ120P03NS3EGATMA1?

The device is qualified for continuous operation up to 150 °C junction temperature, with thermal characteristics validated per JEDEC standards. At T_C = 70 °C, the continuous drain current is derated to 26 A. The R_thJC value of 2.4 K/W allows accurate junction temperature estimation when mounted on a 6 cm² copper area per datasheet condition.

Does BSZ120P03NS3EGATMA1 require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 74–111 pF) and parasitic inductance. The internal gate resistance is 2.2 Ω, but external series resistance improves EMI performance and prevents unintended oscillation during fast edge transitions in high-frequency switching applications.

Can BSZ120P03NS3EGATMA1 be used in synchronous rectification?

Yes-it is commonly deployed as the high-side synchronous rectifier in buck converters for notebook CPU/GPU VRMs. Its low R_DS(on) (9.0–12.0 mΩ @ -10 V), fast switching (t_r = 11–17 ns), and low Q_gd enable high efficiency at 300 kHz–1 MHz switching frequencies, provided gate drive timing avoids shoot-through with the complementary N-channel switch.

Is the body diode suitable for freewheeling in DC-DC converters?

The integrated body diode has t_rr = 47 ns and Q_rr = 55 nC at 25 °C, making it viable for freewheeling in medium-frequency buck converters. However, for best efficiency, synchronous rectification using the MOSFET channel is preferred-its forward voltage drop (V_SD = -1.1 V @ -20 A) is significantly higher than the channel's I·R_DS(on) loss (<240 mV).

BSZ120P03NS3EGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.1V @ 73µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3360 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSZ120P03NS3EGATMA1 FAQ

1.How can I place an order for BSZ120P03NS3EGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ120P03NS3EGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ120P03NS3EGATMA1 reliable?

The price and inventory of BSZ120P03NS3EGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ120P03NS3EGATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ120P03NS3EGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ120P03NS3EGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ120P03NS3EGATMA1?

BSZ120P03NS3EGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ120P03NS3EGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ120P03NS3EGATMA1?

For technical support, including BSZ120P03NS3EGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ120P03NS3EGATMA1 requirements.

6.How does Aetrix verify that BSZ120P03NS3EGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ120P03NS3EGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ120P03NS3EGATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ120P03NS3EGATMA1?

All BSZ120P03NS3EGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ120P03NS3EGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ120P03NS3EGATMA1 part is unused and in its original packaging.

Return procedure for BSZ120P03NS3EGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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