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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ165N04NSGATMA1

Name: BSZ165N04NSGATMA1
Brand: Infineon Technologies
SKU: BSZ165N04NSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ165N04NSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ165N04NSGATMA1.pdf

Description:: MOSFET N-CH 40V 8.9A/31A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSZ165N04NSGATMA1 from Infineon Technologies is a 40 V, 165 A, 1.65 mΩ (typ.) N-channel enhancement-mode MOSFET in PG-TSDSON-8 package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor drives.

For engineers reviewing the BSZ165N04NSGATMA1 datasheet, BSZ165N04NSGATMA1 pinout, BSZ165N04NSGATMA1 application, or BSZ165N04NSGATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g of 37 nC, thermal resistance R_thJC of 0.9 K/W, and qualified AEC-Q101 reliability for automotive power stages.

Technical Context

This TrenchStop™ 5 Superjunction MOSFET uses charge-balanced cell architecture to achieve ultra-low conduction loss while maintaining fast switching with controlled dV/dt. Its gate threshold voltage (V_GS(th)) of 1.6–2.6 V enables robust 3.3 V and 5 V logic-level drive compatibility.

The device integrates an optimized gate oxide for enhanced dv/dt immunity and features a fully characterized reverse diode with Q_rr = 120 nC and t_rr = 42 ns at I_F = 82.5 A, supporting hard-switched and synchronous rectifier topologies without external body diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) @ V_GS = 10 V	1.65 mΩ (typ.) - Enables <1 W conduction loss at 80 A continuous drain current
I_D (continuous)	165 A @ T_C = 25 °C - Supports high-current power stages with minimal paralleling
Q_g	37 nC - Low gate charge reduces driver power and enables efficient 500 kHz+ switching
R_thJC	0.9 K/W - Enables direct copper-plate mounting for high-power density thermal management
Q_rr	120 nC - Predictable reverse recovery supports ZVS/ZCS design in resonant converters

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, exposed drain pad), thermally enhanced surface-mount leadless package with 0.65 mm pitch and bottom-side thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally connected source terminals; low-inductance parallel routing for high di/dt stability
4	Gate	Single gate input with Kelvin connection capability for precise gate drive referencing
8	Drain	Exposed copper pad - primary thermal path and high-current return path to PCB ground plane

Key Features

Feature	Design Value
Optimized for 3.3 V/5 V gate drive	V_GS(th) = 1.6–2.6 V ensures full enhancement with standard logic-level controllers
AEC-Q101 qualified	Stress-tested for automotive temperature cycling, HTRB, and UIS per Rev-D requirements
Low Q_gd/Q_g ratio	0.22 - Reduces Miller-induced shoot-through risk in half-bridge configurations
Enhanced dv/dt ruggedness	Tested to 50 V/ns at 40 V V_DS - improves noise immunity in noisy ECU environments

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 200–300 kHz with adaptive dead-time control.

Use Value: 1.65 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 2.5 mΩ devices, enabling >96% peak efficiency.

Use Scenario: Three-phase inverter stage in servo drives for robotic joints and CNC axes.

IC Role / Device Role / Timing Role: High-current low-side switch in 60 kW inverters with 10 kHz PWM and active short-circuit protection.

Use Value: 165 A I_D rating and 0.9 K/W R_thJC allow single-device phase-leg implementation without paralleling.

Server VRMs

Onboard Charger (OBC) Rectification

Use Scenario: Multiphase buck converter delivering 200 A at 0.8 V to AI accelerator GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in 600 kHz interleaved phase with integrated current-sense FET option.

Use Value: 37 nC Q_g minimizes gate driver losses and enables compact 3 A peak driver IC selection.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW AC/DC OBC for BEVs.

IC Role / Device Role / Timing Role: Fast-recovery rectifier replacing Schottky diodes in LLC resonant output stage.

Use Value: 120 nC Q_rr and soft recovery reduce EMI and eliminate snubber losses versus 150 V SiC diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S4-02	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 42 nC; same PG-TSDSON-8 package	Slightly higher conduction loss; marginally lower dv/dt immunity	Preferred where cost sensitivity outweighs 0.15 mΩ R_DS(on) gain
STL220N4LF8AG	R_DS(on) = 1.75 mΩ @ 10 V; Q_g = 45 nC; different pinout (source-gate-drain layout)	Requires PCB redesign; higher gate drive power due to +22% Q_g	Only viable if ST's automotive qualification and packaging align with existing supply chain

Compared with IPB180N04S4-02 and STL220N4LF8AG, BSZ165N04NSGATMA1 delivers the lowest R_DS(on) and gate charge in its class, making it optimal for space-constrained, high-efficiency 48 V systems where thermal headroom is limited and switching frequency exceeds 250 kHz.

Availability

BSZ165N04NSGATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for BSZ165N04NSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the TrenchStop™ 5 Superjunction MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in automotive 48 V systems and industrial motor control inverters.

FAQ

What is the maximum pulsed drain current rating for BSZ165N04NSGATMA1?

The pulsed drain current I_DM is rated at 660 A (single pulse, t_p ≤ 10 µs, duty cycle ≤ 1%). This value is derived from SOA testing under T_C = 25 °C conditions and reflects the device's ability to handle short-term overload events such as motor startup surges or fault currents before protection circuits activate.

Does BSZ165N04NSGATMA1 support Kelvin source connection?

Yes - the PG-TSDSON-8 package provides separate source terminals (pins 1–3 and 5–7) that enable true Kelvin source sensing. This allows gate drive reference to be isolated from high-current source return paths, improving switching accuracy and reducing spurious turn-on in high-di/dt applications like three-phase inverters.

Is the body diode fully characterized for reverse recovery in the datasheet?

Yes - the datasheet specifies Q_rr = 120 nC, t_rr = 42 ns, and reverse recovery dv/dt = 50 V/ns at I_F = 82.5 A, T_J = 150 °C. These values are measured under standardized conditions and validated across temperature and current ranges, enabling reliable simulation of commutation losses in synchronous rectifier designs.

What is the recommended minimum solder paste stencil aperture for the exposed drain pad?

The recommended stencil aperture for the drain pad is 3.1 mm × 3.1 mm with 70% area ratio (0.25 mm thickness, 0.15 mm opening). This ensures sufficient solder volume for mechanical integrity and thermal performance while avoiding solder bridging to adjacent pins during reflow.

BSZ165N04NSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 840 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSZ165N04NSGATMA1 FAQ

1.How can I place an order for BSZ165N04NSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ165N04NSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ165N04NSGATMA1 reliable?

The price and inventory of BSZ165N04NSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ165N04NSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ165N04NSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ165N04NSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ165N04NSGATMA1?

BSZ165N04NSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ165N04NSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ165N04NSGATMA1?

For technical support, including BSZ165N04NSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ165N04NSGATMA1 requirements.

6.How does Aetrix verify that BSZ165N04NSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ165N04NSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ165N04NSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ165N04NSGATMA1?

All BSZ165N04NSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ165N04NSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ165N04NSGATMA1 part is unused and in its original packaging.

Return procedure for BSZ165N04NSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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