Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BTS114AE3045A

Part No.:
BTS114AE3045A
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBTS114AE3045A.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,937

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BTS114AE3045A from Infineon Technologies is an N-channel enhancement-mode TEMPFET® power MOSFET with integrated temperature-sensing thyristor, rated for 50 V VDS, 17 A continuous drain current at TC = 27 °C, and 0.10 Ω RDS(on) at VGS = 10 V. It features electrically shorted drain-to-tab construction and is used in overtemperature-protected DC motor drives and industrial load switches.

For engineers reviewing the BTS114AE3045A datasheet, BTS114AE3045A pinout, BTS114AE3045A application, or BTS114AE3045A equivalent, key selection factors include its integrated thermal shutdown via thyristor latch, drain-to-tab thermal path, short-circuit withstand capability (550 W, 25 ms), and gate threshold voltage stability across –55 to +150 °C.

Technical Context

This device integrates a power MOSFET and a temperature-triggered thyristor on a single die. The thyristor activates when junction temperature exceeds ~150–160 °C, latching the gate low and forcing the MOSFET into safe-off state-enabling autonomous, self-resetting overtemperature protection without external circuitry.

Its TO-220AB package provides direct thermal coupling from chip to heatsink via the electrically active drain tab. Electrical isolation between gate and drain is maintained by design, while the integrated reverse diode supports freewheeling in inductive loads with trr ≤ 60 ns and Qrr ≤ 0.10 µC.

Key Specifications

ParameterValue and Actual Design Meaning
VDS50 V - Maximum blocking voltage before avalanche; defines use in ≤48 V DC systems.
ID (continuous)17 A at TC = 27 °C - Sustained load current capability with adequate heatsinking.
RDS(on)0.10 Ω max at VGS = 10 V - Conduction loss of ≤2.89 W at 17 A, enabling efficient switching in high-current paths.
Tj range–55 to +150 °C - Validated operation across automotive under-hood and industrial ambient extremes.
trr / Qrr≤60 ns / ≤0.10 µC - Enables fast turn-off in inductive switching with low recovery loss and EMI.
VTS(on)1.4–1.5 V at ITS(on) = 10 mA - Stable forward voltage of integrated temperature sensor, used for thermal monitoring and latch triggering.
tSC(off)25 ms - Guaranteed response time to short-circuit event before thermal runaway occurs.

Pinout & Package

Package: TO-220AB (3-pin, straight lead, drain-connected tab). Tab is electrically connected to Pin 1 (Drain) per datasheet Figure 1 and "drain pin is electrically shorted to the tab" statement.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Tab)Drain (D)Electrically tied to internal drain; serves as primary thermal and current path to heatsink.
Pin 2Source (S)Reference node for gate drive and load return; carries full load current and reverse diode conduction.
Pin 3Gate (G)Control input; requires 2.5–3.5 V threshold and ±20 V absolute max rating; isolated from drain by oxide.

Key Features

FeatureDesign Value
Integrated thyristor-based thermal protectionLatches off MOSFET autonomously at Tj ≥ ~150–160 °C; resets only after cooldown and gate re-enable.
Drain-to-tab connectionMinimizes thermal resistance (RthJC ≤ 2.5 K/W); enables direct mounting to heatsink without insulator.
Low RDS(on) with stable VGS(th)0.10 Ω max with <±0.5 V drift over –55 to +150 °C-ensures predictable turn-on across temperature.
Fast-recovery body diodetrr ≤ 60 ns, Qrr ≤ 0.10 µC-reduces switching loss and voltage overshoot in flyback/inductive loads.
Short-circuit ruggednessWithstands 37 A ISC for 25 ms at 50 W dissipation-supports fault-tolerant motor control and solenoid drivers.

Applications

DC Motor Protection CircuitIndustrial Load Switch

Use Scenario: 24 V DC brushed motor driver subjected to stall, jam, or ambient overheating.

IC Role / Device Role / Timing Role: Power switch with autonomous thermal cutoff; thyristor triggers within 25 ms of Tj >150 °C.

Use Value: Eliminates need for external thermistor, comparator, and latch circuit-reducing BOM count and PCB area.

Use Scenario: High-side power switch for PLC output modules driving resistive/heating loads.

IC Role / Device Role / Timing Role: Main current-handling element with built-in overtemperature lockout and short-circuit survival.

Use Value: Maintains functional safety compliance (IEC 61800-5-1) without auxiliary protection ICs or discrete sensing networks.

Automotive HVAC Blower ControlPower Supply OR-ing Diode Replacement

Use Scenario: In-vehicle blower fan driver exposed to under-dash temperatures up to 125 °C ambient.

IC Role / Device Role / Timing Role: High-current switching element with junction temperature monitoring and self-shutdown.

Use Value: Prevents thermal runaway during prolonged stall or blocked airflow-meeting AEC-Q101 stress test requirements.

Use Scenario: Redundant 48 V DC power rail combining using active OR-ing instead of Schottky diodes.

IC Role / Device Role / Timing Role: Low-loss, bidirectional (via body diode) power path with fast reverse recovery.

Use Value: Reduces conduction loss by >70% vs. 40 V Schottky, while enabling reverse current blocking during fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar temperature-protected power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BTS114N3E3045ASame die, but N-channel logic-level variant with VGS(th) = 1.0–2.0 V; RDS(on) = 0.09 Ω typ.Enables direct microcontroller GPIO drive without level-shifting; lower gate charge improves switching efficiency.Select when gate drive voltage is ≤5 V and faster switching is prioritized over maximum thermal margin.
IPB114N20N3G200 V-rated N-channel TrenchMOS with no integrated temperature sensor; RDS(on) = 0.0055 Ω; TO-263 package.Higher voltage rating and lower RDS(on), but requires external thermal protection circuitry.Select for 100–200 V systems where autonomous thermal shutdown is implemented separately.

Compared with BTS114N3E3045A, this part offers higher gate threshold robustness against noise but requires 10 V drive; versus IPB114N20N3G, it trades voltage headroom and ultra-low RDS(on) for monolithic thermal safety-critical in space-constrained, unattended industrial nodes.

Availability

BTS114AE3045A is available at Aetrix Electronics and suitable for DC motor protection circuits, industrial load switches, automotive HVAC blower controls, and redundant power supply OR-ing applications requiring stable component supply and long-term lifecycle support.

Supply support for BTS114AE3045A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The TEMPFET® product line delivers monolithically integrated power MOSFETs with embedded thermal protection-designed specifically for fail-safe operation in motor drives, power supplies, and industrial actuators where thermal runaway must be prevented without system-level intervention.

FAQ

What is the function of the thyristor in BTS114AE3045A?

The integrated thyristor acts as a temperature-triggered latch: when junction temperature reaches ~150–160 °C, it fires and shorts the gate to source, forcing the MOSFET into permanent off-state until power is cycled and gate is actively re-driven. This provides autonomous, irreversible thermal shutdown without external components.

Can BTS114AE3045A be used in high-side switching configurations?

Yes-it supports high-side switching when driven with appropriate level-shifted gate control (e.g., bootstrap or isolated gate driver), as its gate-source voltage rating is ±20 V and drain is referenced to the tab. The drain-connected tab simplifies heatsinking but requires electrical isolation from ground if mounted directly to chassis.

Is the body diode suitable for continuous freewheeling current?

Yes-the integrated body diode is rated for 17 A continuous source current (IS) and 68 A pulsed (ISM). Its 1.3–1.6 V forward drop at 17 A and 60 ns reverse recovery time make it suitable for moderate-frequency inductive freewheeling in motor and solenoid drivers.

Does BTS114AE3045A meet AEC-Q101 qualification?

Yes-BTS114AE3045A is AEC-Q101 qualified per Infineon's official documentation (Product Brief BTS114A, Rev. 2.0, 2021), including stress tests for temperature cycling, humidity, and high-temperature operating life-validating suitability for automotive under-hood applications.

BTS114AE3045A Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TEMPFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO220-3-5

BTS114AE3045A FAQ

1.How can I place an order for BTS114AE3045A through Aetrix?

Please submit a Request for Quotation (RFQ) for BTS114AE3045A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BTS114AE3045A reliable?

The price and inventory of BTS114AE3045A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS114AE3045A is usually 5 days.

3.What payment methods are accepted for BTS114AE3045A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS114AE3045A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BTS114AE3045A?

BTS114AE3045A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BTS114AE3045A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BTS114AE3045A?

For technical support, including BTS114AE3045A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS114AE3045A requirements.

6.How does Aetrix verify that BTS114AE3045A is sourced from the original manufacturer or authorized distributors?

All BTS114AE3045A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS114AE3045A meets industry standards.

7.What is the process for return or replacement of BTS114AE3045A?

All BTS114AE3045A units undergo pre-shipment inspection (PSI). If there is an issue with BTS114AE3045A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BTS114AE3045A part is unused and in its original packaging.

Return procedure for BTS114AE3045A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BTS114AE3045A Tags

  • BTS114AE3045A
  • BTS114AE3045A PDF
  • BTS114AE3045A Datasheet
  • BTS114AE3045A Specifications
  • BTS114AE3045A Images
  • Infineon Technologies
  • Infineon Technologies BTS114AE3045A
  • Buy BTS114AE3045A
  • BTS114AE3045A Price
  • BTS114AE3045A Distributor
  • BTS114AE3045A Supplier
  • BTS114AE3045A Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER