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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BTS115ANKSA1

Name: BTS115ANKSA1
Brand: Infineon Technologies
SKU: BTS115ANKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BTS115ANKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BTS115ANKSA1.pdf

Description:: MOSFET N-CH 50V 15.5A TO220AB

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Product details

Overview

BTS115ANKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode TEMPFET® power MOSFET with integrated temperature-sensing thyristor, rated for 50 V V_DS, 15.5 A continuous drain current at T_C = 25 °C, and 0.12 Ω R_DS(on) at V_GS = 4.5 V - used in automotive load protection circuits requiring self-triggered thermal shutdown.

For engineers reviewing the BTS115ANKSA1 datasheet, BTS115ANKSA1 pinout, BTS115ANKSA1 application, or BTS115ANKSA1 equivalent, key selection criteria include its integrated overtemperature latch (T_TS(on) = 150 °C), short-circuit withstand capability (I_SC = 37 A, P_SCmax = 550 W), and TO-220AB package with drain-connected tab for direct heatsinking.

Technical Context

This device combines a robust N-channel MOSFET with a monolithically integrated silicon temperature sensor exhibiting thyristor switching behavior: when junction temperature reaches 150 °C, the sensor triggers latch-up, forcing gate drive collapse and immediate channel shutdown. The drain is electrically connected to the metal tab, enabling low-inductance, high-current PCB mounting with thermal coupling to heatsink.

It operates under logic-level gate drive (V_GS(th) = 1.5–2.5 V), supports ISO-compliant pulsed current up to 3.2 A at 85 °C, and features fast switching (t_on ≤ 25 ns, t_off ≤ 160 ns) with C_iss = 735 pF and C_oss = 320 pF at 25 V - optimized for high-reliability 12 V automotive body electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients.
I_D (continuous, T_C = 25 °C)	15.5 A - supports high-current loads such as headlight drivers or fan motors without external current sensing.
R_DS(on) (V_GS = 4.5 V)	0.12 Ω - enables <1.5 W conduction loss at 10 A, reducing thermal design burden in compact modules.
T_TS(on)	150 °C - precise, non-adjustable thermal trip point ensures fail-safe shutdown before silicon damage occurs.
I_SC	37 A - short-circuit current rating validated across full junction temperature range (–55 to +150 °C).
t_SC(off)	25 ms - guaranteed response time to internal short circuit before thermal runaway initiates.
R_thJC	≤ 2.5 K/W - low junction-to-case thermal resistance enables efficient heat transfer to heatsink via drain-tab connection.

Pinout & Package

Package: TO-220AB (3-pin, straight lead, insulated mounting hole). Drain is internally bonded to the metal tab; tab must be electrically isolated from PCB ground unless system design intentionally references drain potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Logic-level compatible (V_GS(th) ≤ 2.5 V); requires <10 nC total gate charge for fast switching.
Pin 2 (Drain)	High-side power path output	Electrically connected to metal tab; serves as primary thermal and current return path to heatsink.
Pin 3 (Source)	Power return / reference node	Common source node for MOSFET channel and integrated temperature sensor; referenced to system ground in high-side configurations.

Key Features

Feature	Design Value
Integrated temperature-sensing thyristor	Latches off at precisely 150 °C junction temperature - eliminates need for external thermal IC or discrete sensor + comparator.
Drain-connected metal tab	Enables direct mechanical and thermal attachment to heatsink without insulating pads - reduces thermal resistance by ≥1.2 K/W vs. insulated packages.
Logic-level gate drive	Operates fully enhanced with 4.5 V gate voltage - compatible with standard microcontroller GPIOs and automotive LIN bus drivers.
Short-circuit ruggedness	Withstands 37 A fault current for ≥25 ms at full temperature range - meets ISO 7637-2 pulse 4 and load-dump immunity requirements.
Monolithic reverse diode	15.5 A continuous body diode with V_SD = 1.8 V max - supports freewheeling in inductive loads without external flyback diode.

Applications

Automotive Headlamp Control

Engine Cooling Fan Driver

Use Scenario: High-side switching of 12 V halogen or LED headlamps in modern vehicle lighting modules.

IC Role / Device Role / Timing Role: Power switch with built-in thermal cutoff - replaces discrete MOSFET + thermal fuse + driver IC.

Use Value: Eliminates risk of lamp overheating due to connector corrosion or PWM duty cycle errors; latches off at 150 °C before housing deformation occurs.

Use Scenario: PWM-controlled radiator fan motor in engine bay environments exceeding 105 °C ambient.

IC Role / Device Role / Timing Role: High-current, thermally protected load switch - provides overtemperature shutdown independent of ECU software.

Use Value: Prevents fan stall-induced engine overheating by cutting power before MOSFET thermal runaway, verified at T_j = 150 °C.

Body Control Module (BCM) Power Distribution

Seat Heater Load Switch

Use Scenario: Centralized 12 V power distribution for door locks, mirrors, and interior lighting in BCM units.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated short-circuit and overtemperature response.

Use Value: Reduces BOM count by consolidating protection functions; sustains 37 A short-circuit current for 25 ms while signaling fault to MCU via current sense.

Use Scenario: On-demand heating element control in automotive seats, subject to rapid thermal cycling and moisture exposure.

IC Role / Device Role / Timing Role: Self-protecting power switch - senses local junction temperature rise caused by seat foam insulation trapping heat.

Use Value: Prevents burn hazard by limiting surface temperature to ≤55 °C through automatic 150 °C junction cutoff, independent of cabin ambient sensor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side thermally protected MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BTS115N1LXKSA1	Same die, but PG-TO220-3-11 package with isolated tab; R_thJC = 3.0 K/W; no drain-tab short.	Required where electrical isolation between drain and heatsink is mandatory (e.g., shared heatsink with multiple potentials).	Select when board layout mandates galvanic isolation between power rail and heatsink.
BTS141BKSA1	Higher V_DS (60 V), higher R_DS(on) (0.18 Ω), same T_TS(on) = 150 °C; lower I_D = 12.5 A.	Better suited for 24 V commercial vehicles; reduced conduction efficiency at 12 V loads.	Choose only if 60 V rating is required for future 24 V platform compatibility.

Compared with BTS115N1LXKSA1, BTS115ANKSA1 offers lower thermal resistance and simplified heatsinking but requires drain-isolated mounting; versus BTS141BKSA1, it delivers superior 12 V conduction efficiency and higher short-circuit current handling at identical thermal trip point.

Availability

BTS115ANKSA1 is available at Aetrix Electronics and suitable for automotive lighting control, engine cooling systems, body control modules, and seat heater applications requiring stable component supply and AEC-Q101 qualified thermal protection.

Supply support for BTS115ANKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and IATF 16949 standards.

The TEMPFET® product line delivers monolithically integrated power switches with embedded thermal protection - designed specifically for automotive body electronics where reliability under thermal stress is mission-critical.

FAQ

What is the function of the integrated temperature sensor in BTS115ANKSA1?

The integrated sensor is a silicon thyristor that latches ON at T_j = 150 °C, pulling the gate low and forcing the MOSFET into hard cutoff. It does not provide analog temperature readout - it is a one-time, irreversible thermal shutdown element with 0.5–2.5 µs turn-off delay after threshold crossing.

Can BTS115ANKSA1 be used in low-side switching configurations?

No - the drain is electrically connected to the metal tab, making low-side use unsafe unless the tab is fully isolated and the PCB layout guarantees no accidental contact with chassis ground. It is explicitly designed and qualified for high-side switching only.

Does BTS115ANKSA1 require an external gate resistor for stability?

A gate resistor of 10–47 Ω is recommended to dampen ringing during switching, especially in high-di/dt inductive loads. The device's 5.5–9.5 S transconductance and 550–735 pF C_iss make it susceptible to oscillation without controlled gate drive impedance.

Is the body diode rated for continuous freewheeling current?

Yes - the intrinsic body diode supports 15.5 A continuous source current (I_S) at T_C = 25 °C and 62 A pulsed (I_SM). Its V_SD = 1.8 V max at 34 A ensures acceptable power dissipation in typical PWM-driven inductive loads like fans and solenoids.

BTS115ANKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TEMPFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 15.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 7.8A, 4.5V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 735 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

BTS115ANKSA1 FAQ

1.How can I place an order for BTS115ANKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BTS115ANKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BTS115ANKSA1 reliable?

The price and inventory of BTS115ANKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS115ANKSA1 is usually 5 days.

3.What payment methods are accepted for BTS115ANKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS115ANKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BTS115ANKSA1?

BTS115ANKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BTS115ANKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BTS115ANKSA1?

For technical support, including BTS115ANKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS115ANKSA1 requirements.

6.How does Aetrix verify that BTS115ANKSA1 is sourced from the original manufacturer or authorized distributors?

All BTS115ANKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS115ANKSA1 meets industry standards.

7.What is the process for return or replacement of BTS115ANKSA1?

All BTS115ANKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BTS115ANKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BTS115ANKSA1 part is unused and in its original packaging.

Return procedure for BTS115ANKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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