Infineon Technologies BTS121AE3045ANTMA1
- Part No.:
- BTS121AE3045ANTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BTS121AE3045ANTMA1.pdf
- Description:
- MOSFET N CH 100V 22A TO-220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,257
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Product details
Overview
BTS121AE3045ANTMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode TEMPFET® power MOSFET with integrated temperature-sensing thyristor, rated for 100 V VDS, 22 A continuous drain current at TC = 25 °C, and 0.085 Ω typical RDS(on) at VGS = 4.5 V. It is used in automotive load protection circuits where overtemperature shutdown and short-circuit robustness are required.
For engineers reviewing the BTS121AE3045ANTMA1 datasheet, BTS121AE3045ANTMA1 pinout, BTS121AE3045ANTMA1 application, or BTS121AE3045ANTMA1 equivalent, key selection criteria include its integrated thermal shutdown function (TTS(on) = 150 °C), short-circuit withstand capability (ISC = 68 A, PSCmax = 1000 W at VDS ≤ 15 V), and TO-220AB package with drain-connected tab for direct heatsinking.
Technical Context
This device integrates a power MOSFET and a temperature-triggered thyristor on a single die. The thyristor activates when junction temperature reaches ~150 °C, latching the device off until gate reset or power cycle - enabling autonomous overtemperature protection without external circuitry.
It operates as a high-side or low-side switch in DC loads up to 100 V, with fast switching (ton ≤ 210 ns, toff ≤ 400 ns) and robust safe operating area (SOA) up to D = 0.01 at TC = 25 °C. Its RDS(on) exhibits positive temperature coefficient, supporting current sharing in parallel configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 24 V and 48 V automotive and industrial DC systems with margin against transients |
| ID (continuous, TC = 25 °C) | 22 A - enables direct driving of high-current solenoids, motors, or lighting loads |
| RDS(on) (typ., VGS = 4.5 V) | 0.085 Ω - reduces conduction loss to ≤19 W at 22 A, easing thermal design |
| TTS(on) | 150 °C - precise, repeatable thermal trip point for critical overtemperature shutdown |
| ISC | 68 A - sustains short-circuit events for ≤25 ms before latch-off, protecting downstream wiring |
| toff (sensor) | 0.5–2.5 µs - ensures rapid response to thermal runaway, limiting energy dissipation during fault |
| RthJC | ≤1.32 K/W - allows efficient heat transfer from die to heatsink via electrically active drain-tab mounting |
Pinout & Package
Package: TO-220AB with electrically connected drain tab (Pin 1 = Gate, Pin 2 = Drain/Tab, Pin 3 = Source). The drain is internally shorted to the metal tab, enabling low-inductance, low-thermal-resistance mounting directly to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Logic-level compatible (VGS(th) = 1.5–2.5 V); accepts 3.3 V or 5 V drive without level-shifting |
| Pin 2 (Drain / Tab) | High-side power path & thermal interface | Electrically tied to case; must be isolated from chassis unless system ground references drain |
| Pin 3 (Source) | Return path & reference node | Serves as local ground reference for gate drive; requires low-impedance PCB routing to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature sensor with thyristor latch | Autonomous shutdown at 150 °C without controller intervention; resets only on power cycle or gate reset |
| Drain-connected tab | Enables direct mechanical and thermal coupling to heatsink while maintaining electrical connection to drain node |
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V - compatible with MCU GPIO and low-voltage drivers |
| Short-circuit ruggedness | Withstands 68 A fault current for up to 25 ms at Tj = 25 °C before triggering thermal latch |
| Low RDS(on) temperature coefficient | Positive dR/dT supports stable current sharing in paralleled configurations without ballast resistors |
Applications
| Automotive Body Control Module (BCM) | Industrial Motor Starter |
|---|---|
Use Scenario: Controlling headlight, fog lamp, or seat heater loads in 12 V/24 V vehicle systems subject to load dump and reverse battery stress. IC Role / Device Role / Timing Role: High-side smart power switch with self-protecting thermal shutdown and short-circuit current limiting. Use Value: Eliminates need for external thermal cutoffs and current-sense amplifiers, reducing BOM count and PCB area by >30%. | Use Scenario: Driving 3-phase BLDC motor phase enable lines or auxiliary pumps in factory automation cabinets. IC Role / Device Role / Timing Role: Robust DC load switch with built-in overtemperature lockout and fast fault response (<2.5 µs). Use Value: Prevents catastrophic failure during stalled-rotor conditions by latching off before junction exceeds 160 °C. |
| Smart Fuse Replacement | Telecom Power Shelf Protection |
Use Scenario: Replacing electromechanical fuses in 48 V telecom or data center power distribution units (PDUs). IC Role / Device Role / Timing Role: Solid-state fuse with programmable trip threshold via thermal sensing and non-resettable latch behavior. Use Value: Enables remote fault logging and eliminates manual fuse replacement, improving system uptime and serviceability. | Use Scenario: Protecting hot-swap controllers and DC-DC converters in redundant power shelves exposed to ambient temperatures up to 70 °C. IC Role / Device Role / Timing Role: Overtemperature-protected high-side switch with low RDS(on) and high SOA margin. Use Value: Maintains reliable operation under sustained overload while preventing thermal runaway during airflow loss events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability thermal-protected MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BTS122E3045ANTMA1 | Higher VDS (120 V), same RDS(on) and thermal latch; higher gate charge (Qg = 42 nC vs. 34 nC) | Better suited for 48 V systems with higher transient margins; slightly slower switching | Select when system Vbus exceeds 100 V or load dump immunity >120 V is required |
| IPD95R1K2P7ATMA1 | 1200 V SiC MOSFET, no integrated thermal latch, RDS(on) = 1.2 Ω, gate threshold 2.5–4.5 V | Designed for high-voltage AC/DC conversion, not thermal-protection use cases | Not functionally equivalent; only consider if replacing legacy silicon with wide-bandgap for efficiency, not safety |
Compared with BTS122E3045ANTMA1, the BTS121AE3045ANTMA1 offers tighter VDS margin and lower gate drive energy, making it optimal for cost-sensitive 24 V automotive loads; unlike IPD95R1K2P7ATMA1, it delivers autonomous thermal protection unattainable with discrete SiC switches.
Availability
BTS121AE3045ANTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, and smart fuse replacements requiring stable component supply, long-term lifecycle support, and AEC-Q101 qualified parts.
Supply support for BTS121AE3045ANTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-reliability protected power switches.
The TEMPFET® product line delivers monolithically integrated power MOSFETs with self-protecting thermal sensing, designed specifically for automotive and industrial applications demanding autonomous fault containment without external supervision.
FAQ
Does BTS121AE3045ANTMA1 require an external gate resistor for safe operation?
No external gate resistor is mandatory for basic switching, but a 10–47 Ω series resistor is recommended to damp ringing and limit peak gate current during fast transitions. The device's gate threshold (1.5–2.5 V) and low input capacitance (Ciss = 1200–1500 pF) allow direct MCU GPIO drive, though layout-dependent parasitics may necessitate controlled slew rate.
Can the temperature latch be reset without power cycling?
No - the thyristor-based latch is non-resettable via gate signal alone. Once triggered, the device remains latched off until VDD is removed and reapplied, or the gate is actively pulled below –0.3 V for >100 ns (per datasheet "sensor override" condition). This ensures fail-safe behavior during thermal faults.
Is the drain tab electrically isolated from the PCB mounting surface?
No - the drain is internally shorted to the metal tab, so mechanical mounting to a heatsink requires electrical isolation (e.g., mica washer + thermal grease or isolating pad) unless the heatsink is referenced to the drain potential. Failure to isolate may cause short circuits or ground loops in high-side configurations.
What is the maximum allowable case temperature during continuous operation?
The absolute maximum case temperature is 150 °C per the storage and operating range specification. However, continuous operation above 125 °C significantly reduces lifetime and increases risk of premature thermal latch activation. Derating curves show ID drops to ~12 A at TC = 100 °C, and thermal design must ensure Tj stays below 150 °C under worst-case ambient and power dissipation.
BTS121AE3045ANTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TEMPFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO220-3-5
BTS121AE3045ANTMA1 FAQ
1.How can I place an order for BTS121AE3045ANTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BTS121AE3045ANTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BTS121AE3045ANTMA1 reliable?
The price and inventory of BTS121AE3045ANTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS121AE3045ANTMA1 is usually 5 days.
3.What payment methods are accepted for BTS121AE3045ANTMA1?
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4.How is shipping managed for BTS121AE3045ANTMA1?
BTS121AE3045ANTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BTS121AE3045ANTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BTS121AE3045ANTMA1?
For technical support, including BTS121AE3045ANTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS121AE3045ANTMA1 requirements.
6.How does Aetrix verify that BTS121AE3045ANTMA1 is sourced from the original manufacturer or authorized distributors?
All BTS121AE3045ANTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS121AE3045ANTMA1 meets industry standards.
7.What is the process for return or replacement of BTS121AE3045ANTMA1?
All BTS121AE3045ANTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BTS121AE3045ANTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BTS121AE3045ANTMA1 part is unused and in its original packaging.
Return procedure for BTS121AE3045ANTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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