Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BTS131E3045ANTMA1

Name: BTS131E3045ANTMA1
Brand: Infineon Technologies
SKU: BTS131E3045ANTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BTS131E3045ANTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BTS131E3045ANTMA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,919

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BTS131E3045ANTMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode TEMPFET® power MOSFET with integrated temperature-sensing thyristor, rated for 50 V V_DS, 25 A continuous drain current at T_C = 25 °C, and 0.06 Ω R_DS(on) at V_GS = 4.5 V - used in motor control, power supply protection, and thermal shutdown circuits where self-protecting switching is required.

For engineers reviewing the BTS131E3045ANTMA1 datasheet, BTS131E3045ANTMA1 pinout, BTS131E3045ANTMA1 application, or BTS131E3045ANTMA1 equivalent, key selection criteria include its integrated overtemperature latch (T_TS(on) = 150 °C), short-circuit withstand capability (I_SC ≤ 80 A, P_SCmax = 1200 W), and TO-220AB package with drain-connected tab for direct heatsinking.

Technical Context

This device combines a high-current N-channel MOSFET and a monolithically integrated silicon temperature sensor with thyristor latching behavior. The sensor triggers irreversible conduction when junction temperature exceeds ~150 °C, forcing gate drive loss and disabling the MOSFET without external circuitry.

It operates in enhancement mode with V_GS(th) of 1.5–2.5 V, supports logic-level gate drive (V_GS = 4.5 V sufficient for full R_DS(on)), and features a built-in body diode with t_rr ≤ 150 ns and Q_rr ≤ 1.0 µC - enabling use in freewheeling and inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - maximum blocking voltage before avalanche; defines safe operating range in 24–48 V systems.
I_D (continuous, T_C = 25 °C)	25 A - usable continuous current with adequate heatsinking; derates to 6.5 A at T_C = 85 °C.
R_DS(on) (V_GS = 4.5 V)	0.06 Ω max - low conduction loss enabling <1.5 W dissipation at 5 A; enables compact thermal design.
T_TS(on)	150 °C - precise, non-resettable thermal trip point; provides fail-safe shutdown before packaging damage.
t_off (sensor)	0.5–2.5 µs - fast thyristor turn-off latency ensures rapid disable after overtemperature detection.
I_SC (short-circuit)	80 A - peak survivable fault current under defined V_DS/V_GS; enables robust short-circuit protection without external fusing.
P_SCmax	1200 W - maximum instantaneous power during short-circuit event; defines energy-handling capability before thermal runaway.

Pinout & Package

Package: TO-220AB (standard 3-pin through-hole) with electrically conductive metal tab connected internally to the drain terminal - requires insulated mounting hardware when heatsink is grounded.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Logic-level compatible; threshold 1.5–2.5 V; accepts standard microcontroller GPIO or driver IC output.
Pin 2 (Drain)	High-side switch node	Internally bonded to metal tab; must be isolated from heatsink unless system ground is floating or drain-referenced.
Pin 3 (Source)	Power return / reference	Common return path for load current and gate drive reference; connects to system ground or low-side shunt.

Key Features

Feature	Design Value
Integrated temperature-sensing thyristor	Latches off at 150 °C junction temperature - eliminates need for external thermal cutoff IC or discrete sensor + comparator.
Drain-connected metal tab	Enables direct thermal coupling to heatsink while maintaining electrical isolation via mica washer or insulating pad - reduces thermal resistance to ≤1.67 K/W (chip-to-case).
Logic-level gate drive	Turns fully on with V_GS ≥ 4.5 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting.
Fast body diode recovery	t_rr ≤ 150 ns, Q_rr ≤ 1.0 µC - minimizes switching losses and voltage spikes in inductive loads like solenoids and DC motors.
Short-circuit ruggedness	Sustains 80 A fault current for up to 25 ms at 30 V V_DS - allows time for upstream protection (e.g., fuse or controller response) without device failure.

Applications

Motor Control Protection

DC Power Supply OCP

Use Scenario: Driving brushed DC motors in automotive seat adjusters or industrial actuators subject to stall and overload.

IC Role / Device Role / Timing Role: High-side power switch with autonomous thermal shutdown - replaces discrete MOSFET + thermal sensor + latch circuit.

Use Value: Prevents coil burnout and connector melting by cutting power within microseconds upon reaching 150 °C junction temperature.

Use Scenario: Output stage of 24 V/15 A industrial DC power supply requiring fault containment during output short.

IC Role / Device Role / Timing Role: Primary switching element with built-in short-circuit energy handling (1200 W) and fast thermal trip.

Use Value: Eliminates need for external current-limiting circuitry and enables single-device overcurrent + overtemperature protection.

Thermal Fuse Replacement

Heating Element Control

Use Scenario: Solid-state replacement for mechanical thermal fuses in HVAC blower modules and battery thermal management systems.

IC Role / Device Role / Timing Role: Self-latching temperature-triggered switch - conducts until tripped, then remains off until power cycle.

Use Value: Enables diagnostic logging of thermal events and avoids mechanical wear/failure modes inherent in bimetallic fuses.

Use Scenario: Controlling resistive heating elements in medical sterilization equipment where precise overtemperature cutoff is mandated.

IC Role / Device Role / Timing Role: Power delivery switch with calibrated 150 °C trip point traceable to silicon physics - no calibration drift over lifetime.

Use Value: Meets IEC 60601-1 thermal safety requirements without external feedback loop or software intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar thermal-protection MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BTS134	Higher V_DS (60 V), same R_DS(on) (0.06 Ω), identical TEMPFET® architecture and T_TS(on) = 150 °C.	Supports 48 V nominal systems; otherwise functionally interchangeable in 24 V designs with margin.	Select when higher bus voltage headroom is needed; pinout and footprint identical.
IPB180N04S4-02	Standard N-channel MOSFET (no integrated temperature sensor), 40 V V_DS, 180 A, 2.0 mΩ R_DS(on), TO-263 package.	Requires external thermal monitoring circuit; superior conduction efficiency but no autonomous shutdown.	Choose only if thermal protection is handled separately and ultra-low R_DS(on) is critical.

Compared with BTS131E3045ANTMA1, BTS134 offers extended voltage rating without trade-offs, while IPB180N04S4-02 delivers lower conduction loss but forfeits monolithic thermal safety - making BTS131 the optimal choice for self-protected 24–48 V switching where reliability and simplicity outweigh raw efficiency.

Availability

BTS131E3045ANTMA1 is available at Aetrix Electronics and suitable for motor control protection, DC power supply overcurrent containment, and thermal fuse replacement applications requiring stable component supply and long-term lifecycle support.

Supply support for BTS131E3045ANTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs - with leadership in high-reliability power discretes and intelligent switching solutions.

The TEMPFET® product line delivers monolithically integrated power MOSFETs with embedded thermal sensing and latching - designed specifically for fail-safe power switching in safety-critical automotive, industrial, and medical systems.

FAQ

Is the temperature trip point adjustable?

No. The 150 °C switching temperature (T_TS(on)) is fixed by the monolithic silicon structure and cannot be adjusted externally. It is calibrated during wafer fabrication and exhibits ±5 °C tolerance across temperature and process variation - no trimming or configuration is possible.

Can the device be reset after thermal latch?

No. Once triggered, the integrated thyristor latches permanently off until power is fully removed from both drain and gate terminals. Full power cycle (V_DS = 0 V and V_GS = 0 V for >100 µs) is required to reset the sensor and restore gate controllability.

What is the maximum allowable gate-source voltage?

The absolute maximum gate-source voltage is ±10 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to ≤10 V positive and ≥–10 V negative - typical logic-level drivers (e.g., TC4420, UCC27531) meet this requirement without additional protection.

Does the body diode support synchronous rectification?

No. The integrated body diode has t_rr ≤ 150 ns and Q_rr ≤ 1.0 µC - suitable for freewheeling and clamp functions, but not optimized for synchronous rectification due to lack of controlled reverse recovery and absence of dedicated gate control for the diode path.

BTS131E3045ANTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TEMPFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

BTS131E3045ANTMA1 FAQ

1.How can I place an order for BTS131E3045ANTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BTS131E3045ANTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BTS131E3045ANTMA1 reliable?

The price and inventory of BTS131E3045ANTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS131E3045ANTMA1 is usually 5 days.

3.What payment methods are accepted for BTS131E3045ANTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS131E3045ANTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BTS131E3045ANTMA1?

BTS131E3045ANTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BTS131E3045ANTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BTS131E3045ANTMA1?

For technical support, including BTS131E3045ANTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS131E3045ANTMA1 requirements.

6.How does Aetrix verify that BTS131E3045ANTMA1 is sourced from the original manufacturer or authorized distributors?

All BTS131E3045ANTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS131E3045ANTMA1 meets industry standards.

7.What is the process for return or replacement of BTS131E3045ANTMA1?

All BTS131E3045ANTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BTS131E3045ANTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BTS131E3045ANTMA1 part is unused and in its original packaging.

Return procedure for BTS131E3045ANTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.