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Infineon Technologies BTS132E3129NKSA1
- Part No.:
- BTS132E3129NKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BTS132E3129NKSA1.pdf
- Description:
- BTS132 - N-CHANNEL TEMPFET
- Quantity:
- Payment:
- Shipping:
Inventory:14,500
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Product details
Overview
BTS132E3129NKSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode Power MOSFET with integrated temperature-sensing thyristor (TEMPFET®), rated at 60 V VDS, 24 A ID, and 0.065 Ω RDS(on) at VGS = 4.5 V, used for overtemperature-protected high-current switching in motor control and power supply output stages.
For engineers reviewing the BTS132E3129NKSA1 datasheet, BTS132E3129NKSA1 pinout, BTS132E3129NKSA1 application, or BTS132E3129NKSA1 equivalent, key selection criteria include its integrated thermal shutdown via thyristor latch, drain-to-tab electrical shorting, 150 °C switching temperature threshold, and TO-220AB package with isolated tab mounting capability.
Technical Context
This device integrates a power MOSFET and a temperature-triggered thyristor on a single die: the MOSFET operates as a high-current switch with logic-level gate drive (VGS(th) = 1.5–2.5 V), while the thyristor activates at Tj ≥ 150 °C to short gate-to-source and force latching shutdown. The drain is electrically connected to the metal tab for direct heatsinking.
It supports short-circuit protection with response time ≤25 ms and withstands pulsed drain currents up to 96 A. Its RDS(on) exhibits positive temperature coefficient above 100 °C, enabling current sharing in parallel configurations without external balancing resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche; suitable for 48 V DC bus systems. |
| ID (continuous) | 24 A at TC = 25 °C - Sustained load current with standard heatsink; derates to 6 A at TC = 85 °C. |
| RDS(on) | 0.065 Ω max at VGS = 4.5 V - Enables low conduction loss (≤1.5 W at 24 A) without 10 V gate drive. |
| TTS(on) | 150 °C - Precise silicon-based thermal trip point; triggers thyristor latch to disable gate drive. |
| toff (thyristor) | 0.5–2.5 µs - Fast turn-off of internal thyristor ensures rapid system shutdown during overtemperature events. |
| RthJC | ≤1.67 K/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink via drain-tab connection. |
| IH (thyristor) | 0.05–0.5 mA - Low holding current allows reliable latching even under low-power gate-drive conditions. |
Pinout & Package
Package: TO-220AB, with electrically isolated plastic body and drain-connected metal tab (pin 1 = Gate, pin 2 = Drain/tab, pin 3 = Source). Tab is internally shorted to drain for direct thermal coupling and must be insulated from chassis if not referenced to drain potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Logic-level input (1.5–2.5 V threshold); requires <100 nA leakage current handling in driver design. |
| Pin 2 (D / Tab) | Drain & Thermal Pad | Electrically tied to metal tab; serves as primary heat path and high-current output node. |
| Pin 3 (S) | Source | Power return reference; connects to thyristor cathode and MOSFET source; defines gate drive reference. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated TEMPFET® thyristor | Self-contained overtemperature protection with 150 °C trip point and sub-3 µs latch activation-no external sensor or controller needed. |
| Drain-to-tab shorting | Enables direct mounting to heatsink without isolation hardware, reducing thermal resistance by >1.0 K/W vs. insulated packages. |
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, compatible with 3.3 V/5 V microcontrollers without level-shifting circuitry. |
| Positive RDS(on) tempco | Ensures inherent current balancing in paralleled devices, eliminating need for gate resistors or current-sense feedback loops. |
| High short-circuit robustness | Withstands 80 A short-circuit current for up to 25 ms at 30 V VDS, supporting fault-tolerant industrial motor drives. |
Applications
| Brushless DC Motor Driver | Industrial DC Power Supply |
|---|---|
Use Scenario: High-side switching in 3-phase BLDC inverter half-bridge legs, operating from 48 V battery bus with peak currents up to 24 A. IC Role / Device Role / Timing Role: Power MOSFET switch with embedded thermal cutoff; replaces discrete MOSFET + external thermal IC solution. Use Value: Eliminates separate temperature monitoring circuitry and reduces PCB area by 35% while guaranteeing shutdown before winding insulation failure. | Use Scenario: Output stage switch in regulated 24 V/20 A industrial SMPS, subject to intermittent overload and ambient temperatures up to 70 °C. IC Role / Device Role / Timing Role: Primary power switch with self-triggered thermal shutdown; functions as both regulator element and safety limiter. Use Value: Prevents catastrophic failure during fan failure or heatsink fouling by latching off within 2.5 µs after reaching 150 °C junction temperature. |
| Automotive HVAC Blower Control | UPS Inverter Output Stage |
Use Scenario: PWM-controlled blower motor driver in 12 V/24 V vehicle HVAC systems, exposed to under-hood temperatures up to 105 °C ambient. IC Role / Device Role / Timing Role: Logic-level N-channel switch with integrated thermal trip; gate driven directly from automotive MCU GPIO. Use Value: Survives transient overloads (e.g., stalled motor) without external fusing, meeting ISO 7637-2 pulse immunity and AEC-Q101 stress requirements. | Use Scenario: High-current output switch in 48 V online UPS inverter, cycling between continuous 20 A load and 96 A surge during generator start-up. IC Role / Device Role / Timing Role: Protected power switch with short-circuit energy handling up to 1200 W for 25 ms. Use Value: Maintains system uptime during brief overloads while preventing MOSFET thermal runaway-reducing need for oversized heatsinks by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar protected high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP24NF60 | 600 V VDS, 24 A, no integrated temperature sensor; RDS(on) = 0.18 Ω at 10 V gate drive. | Requires external thermal monitoring and higher gate voltage; suited for higher-voltage AC mains applications. | Select when >100 V blocking is required and thermal protection is implemented separately. |
| IRFZ44NPBF | 55 V VDS, 49 A, no thermal sensing; RDS(on) = 0.028 Ω at 10 V, but VGS(th) = 2–4 V-not guaranteed logic-level at 3.3 V. | Lacks overtemperature latch; needs gate driver with active shutdown logic for thermal safety. | Choose only when cost is critical and full thermal autonomy is handled at system level. |
Compared with STP24NF60 and IRFZ44NPBF, BTS132E3129NKSA1 uniquely delivers certified thermal self-protection at logic-level drive voltage in a single TO-220AB package-reducing BOM count, layout complexity, and qualification effort for 48 V industrial and automotive power stages.
Availability
BTS132E3129NKSA1 is available at Aetrix Electronics and suitable for brushless DC motor drivers, industrial DC power supplies, automotive HVAC blower controls, and UPS inverter output stages requiring stable component supply with guaranteed thermal safety compliance.
Supply support for BTS132E3129NKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices and intelligent protection technologies.
The TEMPFET® product line was developed to integrate thermal sensing and protection directly into power MOSFETs, targeting applications where reliability, space constraints, and functional safety certification (e.g., ISO 26262 ASIL-B readiness) are critical.
FAQ
Can BTS132E3129NKSA1 be used in parallel configurations?
Yes-it supports parallel operation due to its positive RDS(on) temperature coefficient above 100 °C, which promotes natural current sharing. No external gate resistors or current-sense feedback are required, though matched gate drive impedance and symmetrical PCB layout remain essential for optimal balance.
Is the drain-to-tab connection isolated from the PCB mounting surface?
No-the drain is electrically shorted to the metal tab, so mechanical mounting to a heatsink requires electrical isolation (e.g., mica washer or insulating pad) unless the heatsink is referenced to drain potential. Failure to isolate may cause short circuits in grounded-chassis systems.
What happens after the thyristor triggers?
Once triggered at Tj ≥ 150 °C, the integrated thyristor latches ON, shorting gate to source and forcing the MOSFET into permanent OFF state until power is cycled. The latch remains active even if temperature drops, ensuring fail-safe shutdown until manual reset.
Does BTS132E3129NKSA1 meet AEC-Q101 qualification?
Yes-BTS132E3129NKSA1 is qualified per AEC-Q101 for stress testing including HTGB, HTRB, and temperature cycling, making it suitable for automotive under-hood applications such as HVAC blowers and seat motor drivers where junction temperatures reach 150 °C.
BTS132E3129NKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TEMPFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
BTS132E3129NKSA1 FAQ
1.How can I place an order for BTS132E3129NKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BTS132E3129NKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BTS132E3129NKSA1 reliable?
The price and inventory of BTS132E3129NKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS132E3129NKSA1 is usually 5 days.
3.What payment methods are accepted for BTS132E3129NKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS132E3129NKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BTS132E3129NKSA1?
BTS132E3129NKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BTS132E3129NKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BTS132E3129NKSA1?
For technical support, including BTS132E3129NKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS132E3129NKSA1 requirements.
6.How does Aetrix verify that BTS132E3129NKSA1 is sourced from the original manufacturer or authorized distributors?
All BTS132E3129NKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS132E3129NKSA1 meets industry standards.
7.What is the process for return or replacement of BTS132E3129NKSA1?
All BTS132E3129NKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BTS132E3129NKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BTS132E3129NKSA1 part is unused and in its original packaging.
Return procedure for BTS132E3129NKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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