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Infineon Technologies BTS244ZE3062AATMA1
- Part No.:
- BTS244ZE3062AATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Datasheet:
-
BTS244ZE3062AATMA1.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:31,454
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Product details
Overview
BTS244ZE3062AATMA1 from Infineon Technologies is a Speed TEMPFET® N-channel logic-level power MOSFET with integrated potential-free thyristor-based temperature sensor, rated for 55 V VDS, 13 mΩ RDS(on) at VGS = 10 V, and 26 A ISO-rated continuous drain current at TC = 85 °C; used in automotive body control modules for analog-controlled high-side load switching with overtemperature trip at 150–170 °C.
For engineers reviewing the BTS244ZE3062AATMA1 datasheet, BTS244ZE3062AATMA1 pinout, BTS244ZE3062AATMA1 application, or BTS244ZE3062AATMA1 equivalent, key selection criteria include thermal trip accuracy, avalanche energy rating (1.65 J), gate charge total (85–130 nC), and dual-function pin mapping (G/A/D/K/S) enabling simultaneous power switching and self-contained temperature monitoring without external sensors.
Technical Context
This device integrates a power MOSFET and a thyristor-type temperature sensor on a single die. The sensor operates independently of the FET channel: anode (Pin 2) and cathode (Pin 4) form a voltage-triggered latch with thermal trip threshold of 150–170 °C and reset voltage ≤0.5 V, while gate (Pin 1), drain (Pin 3), and source (Pin 5) handle standard switching functions.
It supports fast switching up to 1 MHz with turn-on delay ≤25 ns and fall time ≤40 ns under 4.5 V drive; its avalanche rating (EAS = 1.65 J at ID = 19 A) and AEC-Q101 qualification confirm suitability for automotive transients. The PG-TO263-5-2 package provides low RthJC = 0.88 K/W for high-power thermal management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 12 V automotive systems with load-dump margin. |
| RDS(on) | 13 mΩ max at VGS = 10 V - Enables <1.3 W conduction loss at 26 A, reducing heatsink requirements. |
| ID(ISO) | 26 A at VGS = 10 V, TC = 85 °C - Complies with ISO 10483 for automotive load current rating under real-world board conditions. |
| TTS(on) | 150–170 °C - Precise thermal trip range enables early-stage overtemperature shutdown before silicon damage. |
| EAS | 1.65 J - Single-pulse avalanche energy sufficient to absorb inductive kickback from 12 V solenoid loads. |
| Qg(total) | 85–130 nC - Gate drive requirement compatible with standard automotive gate drivers (e.g., TLE7181F). |
| toff | 0.5–2.5 μs - Fast sensor deactivation after thermal event ensures rapid system recovery. |
Pinout & Package
Package: PG-TO263-5-2 (D²PAK), surface-mount, thermally enhanced with exposed drain tab for PCB copper area cooling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - G | Gate | Logic-level input (VGS(th) = 1.2–2.0 V); controls MOSFET conduction state. |
| 2 - A | Anode (Temp Sensor) | Thyristor anode; latches ON when junction temperature exceeds trip point. |
| 3 - D | Drain | Main power output terminal; electrically connected to exposed tab for thermal path. |
| 4 - K | Cathode (Temp Sensor) | Thyristor cathode; used with Pin 2 to detect/trigger thermal shutdown. |
| 5 - S | Source | Power return path and gate reference; common node for both FET and sensor circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature sensor | Self-contained thyristor-based sensing with no external components; trip accuracy ±10 °C over -40 to +150 °C. |
| Avalanche ruggedness | Rated for 1.65 J single-pulse energy - eliminates need for external snubbers in inductive load switching. |
| Logic-level gate drive | VGS(th) ≤ 2.0 V and RDS(on) = 13 mΩ @ 4.5 V - compatible with 3.3 V/5 V microcontrollers without level-shifting. |
| Fast switching | Turn-off delay ≤60 ns and fall time ≤40 ns @ 4.5 V drive - supports PWM frequencies up to 1 MHz for precise analog dimming. |
| AEC-Q101 qualified | Validated for automotive applications including engine bay and under-hood environments per stress test requirements. |
Applications
| Automotive Body Control Module | LED Headlamp Driver |
|---|---|
|
Use Scenario: High-side switching of 12 V incandescent and LED loads in door modules, seat controls, and lighting clusters. IC Role / Device Role / Timing Role: Power switch and autonomous thermal protector - replaces discrete MOSFET + NTC + comparator solution. Use Value: Reduces BOM count by 3+ components and eliminates calibration drift; thermal trip occurs before PCB delamination at >150 °C. |
Use Scenario: Analog dimming and fault-protected current regulation for adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Current-controlled power stage with real-time junction temperature feedback via thyristor latch. Use Value: Enables closed-loop thermal derating: luminance reduced before LED color shift or phosphor degradation occurs. |
| Engine Cooling Fan Controller | Electric Power Steering (EPS) Motor Driver |
|
Use Scenario: PWM-driven 12 V DC brushless fan with stall detection and overtemperature shutdown. IC Role / Device Role / Timing Role: High-current switching element with integrated overtemperature latch and reverse diode recovery (trr = 110–165 ns). Use Value: Prevents fan controller failure during blocked-rotor condition; fast toff (≤2.5 μs) allows rapid restart after thermal event. |
Use Scenario: Phase-leg high-side switch in 12 V EPS motor H-bridge with short-circuit and thermal fault handling. IC Role / Device Role / Timing Role: Power MOSFET with built-in thermal trip and avalanche energy absorption for motor phase reversal transients. Use Value: Eliminates need for separate temperature monitoring IC; withstands repeated motor stall events without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side intelligent power switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BTS244Z E3043 | Same die, PG-TO220-5-12 through-hole package; RthJC = 0.95 K/W vs. 0.88 K/W; identical electrical specs. | Limited to lower-power or prototyping use due to higher thermal resistance and manual assembly requirement. | Select for legacy through-hole designs or where reflow compatibility is not required. |
| BTS242Z E3062A | Lower current rating: 19 A ISO, 16 mΩ RDS(on); same thermal trip range and pinout; reduced Qg(total) = 65–100 nC. | Suitable for smaller loads (e.g., mirror heaters, small pumps) but insufficient for 26 A headlamp or fan loads. | Choose when thermal and current margins allow reduction to cut cost and gate drive demand. |
Compared with BTS244Z E3043, the BTS244ZE3062AATMA1 offers superior thermal performance for high-volume SMT production; versus BTS242Z, it delivers 37% higher current capability and 19% lower RDS(on), enabling smaller PCB footprints in space-constrained automotive ECUs.
Availability
BTS244ZE3062AATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, engine cooling fan controllers, and electric power steering motor drivers requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BTS244ZE3062AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949.
The Speed TEMPFET® product line was designed specifically for automotive high-side switching applications requiring integrated thermal protection, eliminating external sensing circuitry while maintaining AEC-Q101 compliance and robust transient immunity.
FAQ
What is the thermal trip behavior of the integrated temperature sensor?
The sensor is a thyristor-based latch with nominal trip temperature of 160 °C (range 150–170 °C). Once triggered, it remains latched until reset by applying ≤0.5 V across Pins 2 and 4 for ≥100 μs. Recovery time to full VAK = 4 V is ≤150 μs after reset pulse removal.
Can the BTS244ZE3062AATMA1 be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Its positive temperature coefficient of RDS(on) (increasing with Tj) enables inherent current sharing; however, gate drive impedance must be identical per device to avoid dynamic imbalance during switching transitions.
Is the internal temperature sensor calibrated per unit?
No - trip temperature is process-controlled and characterized across wafer lots, not individually trimmed. Typical variation is ±10 °C over -40 to +150 °C; application note "Temperature sense concept – Speed TEMPFET" defines design margins for safety-critical use.
Does the device include reverse polarity protection?
No - BTS244ZE3062AATMA1 has no built-in reverse polarity protection. External TVS or series diode is required if system-level reverse battery exposure is possible; the internal body diode conducts only forward (source-to-drain) and does not block reverse voltage.
BTS244ZE3062AATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2660 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-5-2
BTS244ZE3062AATMA1 FAQ
1.How can I place an order for BTS244ZE3062AATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BTS244ZE3062AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BTS244ZE3062AATMA1 reliable?
The price and inventory of BTS244ZE3062AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BTS244ZE3062AATMA1 is usually 5 days.
3.What payment methods are accepted for BTS244ZE3062AATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BTS244ZE3062AATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BTS244ZE3062AATMA1?
BTS244ZE3062AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BTS244ZE3062AATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BTS244ZE3062AATMA1?
For technical support, including BTS244ZE3062AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BTS244ZE3062AATMA1 requirements.
6.How does Aetrix verify that BTS244ZE3062AATMA1 is sourced from the original manufacturer or authorized distributors?
All BTS244ZE3062AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BTS244ZE3062AATMA1 meets industry standards.
7.What is the process for return or replacement of BTS244ZE3062AATMA1?
All BTS244ZE3062AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BTS244ZE3062AATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BTS244ZE3062AATMA1 part is unused and in its original packaging.
Return procedure for BTS244ZE3062AATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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