Infineon Technologies BTS244ZE3062AATMA2

Overview

BTS244ZE3062AATMA2 from Infineon is a Speed TEMPFET® N-channel logic-level power MOSFET with integrated potential-free thyristor-based temperature sensor, rated for 55 V V_DS, 13 mΩ R_DS(on) at V_GS = 10 V, and 26 A ISO-rated continuous drain current at T_C = 85 °C; used in automotive body control modules for analog-controlled high-side load switching with overtemperature shutdown.

For engineers reviewing the BTS244ZE3062AATMA2 datasheet, BTS244ZE3062AATMA2 pinout, BTS244ZE3062AATMA2 application, or BTS244ZE3062AATMA2 equivalent, key selection criteria include thermal trip accuracy (150–170 °C), fast turn-off time (<2.5 μs under sensor-triggered shutdown), avalanche energy rating (1.65 J), and dual-function pin assignment (Pin 2 = Anode, Pin 4 = Cathode) enabling self-protecting load management without external sensing circuitry.

Technical Context

This device integrates a power MOSFET and a monolithically embedded thyristor-type temperature sensor on a single die. The sensor operates independently of the FET channel: forward voltage (V_AK) drops to <0.5 V during thermal trip, triggering latch-up at 150–170 °C and holding until reset via <100 μs pulse below 0.5 V.

It supports analog driving up to 1 MHz switching, features 2130 pF C_iss and 85–130 nC total gate charge, and delivers 35 A continuous drain current at T_C = 100 °C with V_GS = 4.5 V - enabled by PG-TO263-5-2 package's low 0.88 K/W R_thJC.

Key Specifications

Pinout & Package

Package: PG-TO263-5-2 (D²PAK), surface-mount, isolated drain tab, RoHS-compliant, AEC-Q101 qualified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar intelligent power switch applications.

Compared with IPD95R1K2P7 and BTS724G, BTS244ZE3062AATMA2 uniquely combines logic-level analog switching, monolithic thyristor-based thermal trip with <2.5 μs latency, and AEC-Q101 qualification - making it the only choice for safety-critical, high-bandwidth automotive power stages requiring autonomous thermal shutdown.

Availability

BTS244ZE3062AATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, LED headlamp drivers, and smart fuse replacements requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BTS244ZE3062AATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

The Speed TEMPFET® product line was developed specifically for automotive and industrial applications demanding integrated overtemperature protection, fast analog switching, and robust avalanche performance - eliminating external thermal sensing circuitry.

FAQ

What is the thermal trip mechanism and how is it reset?

The BTS244ZE3062AATMA2 uses a monolithic thyristor-based temperature sensor that latches at 150–170 °C. Once triggered, the FET channel turns off and remains off until a reset pulse <100 μs wide and <0.5 V is applied between Pins 4 (K) and 2 (A). This resets the thyristor without requiring power cycle or gate toggling.

Can this device be used in linear (analog) regulation mode?

Yes - the device supports analog driving up to 1 MHz with specified R_DS(on) variation over temperature (±30% from -40 to +150 °C) and guaranteed gate threshold stability. Its 13 mΩ on-resistance and low thermal resistance (0.88 K/W) allow stable DC and PWM-controlled current regulation without external heatsinking at ≤20 A.

Is the temperature sensor electrically isolated from the power FET?

No - the thyristor sensor shares the same silicon die and substrate as the MOSFET, but its anode (Pin 2) and cathode (Pin 4) terminals are electrically separate from the drain-source path. The sensor operates with potential-free biasing: V_AK is measured across Pins 2 and 4, independent of V_DS or V_GS.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, Infineon specifies a 6 cm² copper area (single layer, 70 μm thick) connected to the drain tab (Pin 3/TAB) on FR4 PCB. This achieves R_thJA = 33–40 K/W. Smaller areas increase junction-to-ambient resistance nonlinearly - e.g., 1 cm² raises R_thJA to ~62 K/W, limiting continuous current to ~12 A at T_C = 85 °C.