Infineon Technologies BTS282ZAKSA1

Overview

BTS282ZAKSA1 from Infineon Technologies is a Speed TEMPFET™ monolithic N-channel logic-level power MOSFET with integrated potential-free thyristor-based temperature sensor and overtemperature protection. It features 49 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 100 °C, and fast switching up to 1 MHz - used in automotive body control modules for high-side load driving with thermal trip at 150–170 °C.

For engineers reviewing the BTS282ZAKSA1 datasheet, BTS282ZAKSA1 pinout, BTS282ZAKSA1 application, or BTS282ZAKSA1 equivalent, key selection criteria include its dual-function integration (power switch + self-resetting thermal sensor), avalanche-rated ruggedness, ISO 10483-compliant load current rating, and P-TO220-7-3 package with three source pins for low-inductance parallel conduction.

Technical Context

This device combines a high-current N-channel MOSFET and an independent thyristor-type temperature sensor on a single die. The sensor operates with zero external bias, triggers at 150–170 °C, and latches until reset via a 100 µs pulse applied between anode (Pin 3) and cathode (Pin 5); turn-off time is under 2.5 µs when gate and anode are shorted to source.

The MOSFET supports logic-level drive (V_GS(th) = 1.2–2.0 V), delivers 320 A pulsed drain current, and exhibits low dynamic losses: C_iss = 3850–4800 pF, Q_g(total) = 155–232 nC, and t_r/t_f < 60 ns at 80 A. Its R_thJC = 0.5 K/W enables high-power operation with minimal heatsink requirements.

Key Specifications

Pinout & Package

Packaged in P-TO220-7-3 (7-pin through-hole, 3-source-tab configuration), this device uses the metal tab as Drain (Pin 4 + TAB) for direct heatsinking, with three dedicated Source terminals (Pins 1, 6, 7) to minimize bond-wire inductance and enable parallel current paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current thermally protected switching applications.

Compared with BTS282ZKSA1, the AKSA1 variant offers superior thermal interface capability via straight leads and direct tab mounting, while IPB180N04S4-02 trades integrated protection for higher current density - making BTS282ZAKSA1 optimal for space-constrained, safety-critical automotive loads needing self-contained thermal fail-safe behavior.

Availability

BTS282ZAKSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor starters, electric power steering assist systems, and commercial HVAC blower control requiring stable component supply and long-term lifecycle assurance.

Supply support for BTS282ZAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-reliability power discretes and intelligent switching solutions.

The Speed TEMPFET™ product line was engineered specifically for automotive and industrial applications demanding integrated thermal protection, high-current switching, and ruggedized operation in harsh environments - eliminating external thermal monitoring components without sacrificing performance or safety.

FAQ

What is the thermal trip mechanism of BTS282ZAKSA1, and how is it reset?

The device integrates a thyristor-based temperature sensor that latches ON when junction temperature reaches 150–170 °C. Reset requires applying a ≥100 µs pulse between Pin 3 (Anode) and Pin 5 (Cathode) while referencing both to source potential. Turn-off latency is 0.5–2.5 µs when gate and anode are shorted to source, enabling rapid system recovery after fault clearance.

Can BTS282ZAKSA1 operate in linear (analog) mode, and what limits its safe operating area?

Yes - the datasheet explicitly states "Analog driving possible" and provides SOA curves for DC and pulsed operation. Safe operation in linear mode is limited by maximum power dissipation (300 W at T_C = 25 °C), transient thermal impedance (Z_thJC), and R_DS(on) temperature coefficient. At 80 A and 1 V V_DS, power dissipation exceeds 80 W, requiring active heatsinking and careful duty-cycle management.

How does the three-source-pin configuration improve performance compared to standard TO-220 MOSFETs?

The three-source terminals (Pins 1, 6, 7) reduce total source inductance and distribute current across multiple bond wires and PCB traces. This lowers parasitic oscillation risk during fast switching, improves current sharing in high-di/dt applications, and reduces localized heating at the source bonding interface - directly enhancing reliability in 1 MHz PWM and avalanche-prone motor drive circuits.

Is the temperature sensor electrically isolated from the MOSFET channel, and what is its leakage behavior at high temperature?

Yes - the sensor is potential-free and galvanically isolated from the MOSFET's main channel. At T_j = 150 °C, sensor leakage current (I_AK(off)) is ≤4 µA, ensuring negligible standby power draw and stable latching behavior. The sensor operates independently of V_DS or V_GS, relying solely on junction temperature to trigger conduction between Pins 3 and 5.