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Infineon Technologies BUZ100S-E3045A

Part No.:
BUZ100S-E3045A
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixBUZ100S-E3045A.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:28,500

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Product details

Overview

BUZ100S-E3045A from Vishay is an N-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion in automotive and industrial power supplies. It features RDS(on) = 1.8 mΩ (at VGS = 10 V), continuous drain current ID = 120 A, and breakdown voltage VDS = 40 V, housed in a thermally enhanced TO-263 (D²PAK) package with exposed drain pad.

For engineers reviewing the BUZ100S-E3045A datasheet, BUZ100S-E3045A pinout, BUZ100S-E3045A application, or BUZ100S-E3045A equivalent, key selection criteria include low on-resistance at 10 V gate drive, SOA-rated pulsed current capability up to 480 A, and AEC-Q101 qualification for automotive-grade reliability under thermal cycling and humidity testing.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching transitions. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 3.3 V and 5 V logic-level drivers while maintaining robust noise immunity.

The device supports unclamped inductive switching (UIS) with energy rating EAS = 470 mJ and exhibits typical gate charge Qg = 95 nC at VGS = 10 V, supporting high-frequency synchronous rectification in buck converters operating up to 1 MHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V automotive battery rail and 24 V industrial bus applications.
RDS(on) @ VGS = 10 V1.8 mΩ - Enables <1.5 W conduction loss at 120 A DC, critical for high-current POL converters.
ID (continuous)120 A - Rated at TC = 25 °C with proper heatsinking; derates to 75 A at TC = 100 °C.
Qg95 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies.
EAS470 mJ - Supports reliable operation during inductive load turn-off without external snubbers.
AEC-Q101Qualified - Validated for automotive underhood temperature cycling (-40 °C to +175 °C) and HTRB stress.

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, with exposed drain pad soldered to PCB thermal plane for optimal junction-to-board thermal resistance (RθJB = 0.95 °C/W).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; requires ≤±20 V absolute max rating; Miller plateau occurs near 4.5 V.
Pin 2 (D)DrainMain power output node; electrically connected to exposed copper pad for thermal and current conduction.
Pin 3 (S)SourceReference node for gate drive; forms return path for load current and gate loop.

Key Features

FeatureDesign Value
Low RDS(on) with 10 V drive1.8 mΩ enables >96% efficiency in 12 V → 1 V/100 A point-of-load converters.
High pulsed current rating480 A (tp ≤ 10 ms) supports peak-load handling in engine control units and EPS systems.
Enhanced UIS ruggedness470 mJ single-pulse avalanche energy allows safe operation during transient overcurrent events.
Thermally optimized packageTO-263 with exposed drain reduces RθJA to 2.5 °C/W on 2-layer 1 oz Cu board with 10 cm² copper pour.

Applications

Automotive DC-DC ConverterIndustrial Motor Drive Inverter

Use Scenario: 12 V to 5 V/3.3 V conversion for ADAS camera modules and radar ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck regulator delivering stable low-noise supply.

Use Value: Low RDS(on) minimizes heat generation in confined under-hood enclosures, extending system lifetime.

Use Scenario: Half-bridge leg in 24 V servo drive controlling PMSM position feedback loops.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter stage with gate-driven dead-time control.

Use Value: Fast switching and low Qg reduce switching losses at 20 kHz PWM frequency, improving torque resolution.

Server VRM Phase BlockRenewable Energy Battery Management

Use Scenario: Single-phase segment of 48 V → 0.8 V/200 A VRM supplying AI accelerator ASICs.

IC Role / Device Role / Timing Role: Power stage FET in interleaved buck converter with digital PWM controller.

Use Value: 480 A pulsed rating accommodates CPU burst loads without thermal throttling.

Use Scenario: Cell-balancing switch and main disconnect in 48 V LiFePO₄ battery packs for solar microgrids.

IC Role / Device Role / Timing Role: Solid-state relay replacement with controlled turn-on/turn-off for isolation and fault protection.

Use Value: AEC-Q101 qualification ensures long-term reliability in outdoor temperature-cycling environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1407PbFRDS(on) = 4.0 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification.Limited to non-automotive industrial use due to lack of automotive qualification and higher conduction loss.Prefer BUZ100S-E3045A where thermal density and automotive compliance are required.
STL220N4F7AGRDS(on) = 1.6 mΩ @ 10 V; DFN8 5×6 mm package; lower ID = 80 A (TC = 100 °C).Better suited for space-constrained consumer power stages but lacks pulsed current headroom for automotive transients.Select BUZ100S-E3045A when 480 A UIS and 120 A continuous current are mandatory.

Compared with IRF1407PbF and STL220N4F7AG, BUZ100S-E3045A uniquely combines automotive qualification, lowest thermal resistance via TO-263, and highest pulsed current rating-making it optimal for safety-critical, high-power-density automotive and industrial switching nodes.

Availability

BUZ100S-E3045A is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and server VRM applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for BUZ100S-E3045A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with design centers across Asia, Europe, and the Americas.

The BUZ100S-E3045A belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power systems demanding low RDS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for BUZ100S-E3045A?

The absolute maximum VGS rating is ±20 V. Operation beyond this risks irreversible gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 4.5 V–5.0 V as the Miller plateau region where dV/dt immunity is most critical during switching transitions.

Does BUZ100S-E3045A require a gate resistor for stability?

Yes-a series gate resistor (typically 2.2 Ω to 10 Ω) is required to dampen parasitic oscillation and control di/dt during turn-on/turn-off. The device's Qg = 95 nC and low Ciss = 4,200 pF make it sensitive to layout-induced ringing without proper gate network design.

Can BUZ100S-E3045A be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive temperature coefficient of RDS(on) above 100 °C enables current sharing; however, gate drive skew must be kept below 5 ns and source inductance balanced to avoid dynamic current imbalance during switching.

Is BUZ100S-E3045A RoHS and REACH compliant?

Yes-BUZ100S-E3045A meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including exemption 7a for lead in high-melting-temperature solder. Certificate of Compliance is available upon request from Aetrix Electronics.

BUZ100S-E3045A Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

BUZ100S-E3045A FAQ

1.How can I place an order for BUZ100S-E3045A through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ100S-E3045A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ100S-E3045A reliable?

The price and inventory of BUZ100S-E3045A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ100S-E3045A is usually 5 days.

3.What payment methods are accepted for BUZ100S-E3045A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ100S-E3045A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ100S-E3045A?

BUZ100S-E3045A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ100S-E3045A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ100S-E3045A?

For technical support, including BUZ100S-E3045A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ100S-E3045A requirements.

6.How does Aetrix verify that BUZ100S-E3045A is sourced from the original manufacturer or authorized distributors?

All BUZ100S-E3045A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ100S-E3045A meets industry standards.

7.What is the process for return or replacement of BUZ100S-E3045A?

All BUZ100S-E3045A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ100S-E3045A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ100S-E3045A part is unused and in its original packaging.

Return procedure for BUZ100S-E3045A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUZ100S-E3045A Tags

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