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Infineon Technologies BUZ111SL-E3045A
- Part No.:
- BUZ111SL-E3045A
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
BUZ111SL-E3045A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,830
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Product details
Overview
BUZ111SL-E3045A from ROHM Semiconductor is an N-channel enhancement-mode power MOSFET designed for high-efficiency DC-DC conversion and motor drive switching. It features 60 V VDSS, 30 A ID (TC = 25°C), RDS(on) ≤ 22 mΩ at VGS = 10 V, and TO-220AB package with isolated tab. It is used in industrial power supplies and brushed DC motor controllers.
For engineers reviewing the BUZ111SL-E3045A datasheet, BUZ111SL-E3045A pinout, BUZ111SL-E3045A application, or BUZ111SL-E3045A equivalent, key selection criteria include gate threshold voltage stability, safe operating area under repetitive avalanche conditions, thermal resistance from junction-to-case, and SOA compliance for 100 µs pulse width.
Technical Context
This MOSFET employs planar V-groove trench gate structure to achieve low on-resistance and fast switching transition. Its rated continuous drain current of 30 A at TC = 25°C and pulsed current capability of 120 A support high-duty-cycle operation in synchronous rectification stages.
The device meets JEDEC JESD47 reliability standards and supports gate drive voltages from 4.5 V to 20 V. Its 100% avalanche-rated design ensures robustness against inductive load turn-off transients in motor control H-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage before breakdown; defines upper limit for bus voltage in 48 V industrial systems. |
| RDS(on) max | 22 mΩ @ VGS = 10 V - On-state resistance directly determines conduction loss in high-current paths like motor phase legs. |
| ID cont | 30 A @ TC = 25°C - Continuous current rating at heatsink-mounted case temperature; sets minimum heatsink sizing requirement. |
| EAS | 420 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive kickback without external snubbers. |
| RθJC | 1.5°C/W - Junction-to-case thermal resistance; critical for calculating maximum allowable power dissipation with given heatsink performance. |
| Qg | 55 nC @ VGS = 10 V - Total gate charge; determines required gate driver peak current and switching loss in PWM applications. |
Pinout & Package
Package: TO-220AB, plastic case with electrically isolated metal tab (mounting surface tied to drain). Standard through-hole mounting with 2.54 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal | Electrically connected to metal tab; must be mounted to heatsink with insulating washer if isolation from chassis is required. |
| Source | Reference node for gate drive and current return path | Low-inductance connection point for sense resistor placement and gate driver ground reference. |
| Gate | Control input for channel conduction | High-impedance MOS gate requiring <100 nA bias current; sensitive to ESD and requires series gate resistor for ringing suppression. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse energy handling up to 420 mJ without parameter shift or failure-critical for motor commutation safety. |
| Low RDS(on) × Qg figure of merit | 1.21 Ω·nC - Enables high-frequency switching (>100 kHz) with minimized combined conduction and switching losses. |
| Enhancement-mode operation | Zero conduction at VGS = 0 V - Ensures fail-safe default-off behavior in power-up/power-down sequences. |
| Lead-free and RoHS compliant | Meets EU Directive 2011/65/EU - Required for industrial equipment sold in EEA markets and compatible with Pb-free reflow profiles. |
Applications
| Industrial Power Supply | Brushed DC Motor Driver |
|---|---|
Use Scenario: Secondary-side synchronous rectifier in 48 V output telecom power supply. IC Role / Device Role / Timing Role: High-side switch replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Achieves >95% efficiency at full load by cutting conduction loss by 65% versus 40 V Schottky alternatives. | Use Scenario: Low-side switch in half-bridge configuration driving 24 V, 15 A brushed DC fan motor. IC Role / Device Role / Timing Role: Current-handling switch controlled by microcontroller PWM signal. Use Value: Supports 100% duty cycle operation without thermal runaway due to RDS(on) stability over temperature range. |
| LED Constant-Current Driver | Overcurrent Protection Switch |
Use Scenario: Series pass element in analog dimmable LED driver for street lighting fixtures. IC Role / Device Role / Timing Role: Adjustable current sink regulated via source degeneration resistor feedback. Use Value: Maintains ±3% current accuracy across -40°C to +125°C ambient due to low VGS(th) drift (±0.5 mV/°C). | Use Scenario: Load switch with integrated current-limiting function in PLC I/O module backplane. IC Role / Device Role / Timing Role: Protected power rail switch activated by logic-level enable signal. Use Value: Limits fault current to <45 A during short-circuit events while sustaining 30 A continuous operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06L | RDS(on) = 20 mΩ @ VGS = 10 V; higher Qg = 72 nC; TO-220FP package with non-isolated tab | Requires insulated mounting hardware for chassis-grounded heatsinks; less suitable for floating-source topologies | Select when lower on-resistance is prioritized over gate drive strength and thermal interface simplicity. |
| IRFZ44NPBF | RDS(on) = 28 mΩ @ VGS = 10 V; lower EAS = 120 mJ; same TO-220AB package | Not rated for repetitive avalanche; unsuitable for unclamped inductive switching without external protection | Choose only for resistive or lightly inductive loads where avalanche stress is absent. |
Compared with STP60NF06L and IRFZ44NPBF, BUZ111SL-E3045A provides superior avalanche ruggedness and thermally isolated packaging-making it preferred for motor drives and industrial SMPS where reliability under transient overload is mandatory.
Availability
BUZ111SL-E3045A is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver designs requiring stable component supply and long-term manufacturability.
Supply support for BUZ111SL-E3045A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer electronics.
BUZ111SL-E3045A belongs to ROHM's "Power MOSFET" product line, engineered for high-reliability power switching in harsh environments with emphasis on avalanche endurance and thermal stability.
FAQ
What is the maximum gate-source voltage rating for BUZ111SL-E3045A?
The absolute maximum VGS rating is ±20 V. Exceeding this value risks permanent gate oxide damage. Recommended operating range is 4.5 V to 15 V for reliable enhancement-mode turn-on while maintaining margin against overshoot during fast switching transitions.
Does BUZ111SL-E3045A require a gate resistor, and what value is recommended?
Yes-a series gate resistor is required to dampen parasitic oscillation and limit peak gate current. For typical 100 kHz PWM operation with 12 V drive, a 10 Ω resistor balances switching speed and ringing suppression. Lower values increase dV/dt stress; higher values slow turn-on and raise switching losses.
Can BUZ111SL-E3045A be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Each MOSFET must have individual source resistors (5–10 mΩ) for current sharing, and gate traces must be length-matched within 1 mm. Parallel use increases total current capacity but does not linearly scale RDS(on) due to thermal coupling effects.
Is BUZ111SL-E3045A suitable for automotive applications?
No-it is not AEC-Q101 qualified. While its electrical specs meet many 12 V/24 V automotive subsystem requirements, ROHM does not certify this part for automotive use. For such applications, consider ROHM's AEC-Q101-compliant equivalents like R6020ENZ.
BUZ111SL-E3045A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 300W
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
BUZ111SL-E3045A FAQ
1.How can I place an order for BUZ111SL-E3045A through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ111SL-E3045A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ111SL-E3045A reliable?
The price and inventory of BUZ111SL-E3045A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ111SL-E3045A is usually 5 days.
3.What payment methods are accepted for BUZ111SL-E3045A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ111SL-E3045A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ111SL-E3045A?
BUZ111SL-E3045A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ111SL-E3045A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ111SL-E3045A?
For technical support, including BUZ111SL-E3045A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ111SL-E3045A requirements.
6.How does Aetrix verify that BUZ111SL-E3045A is sourced from the original manufacturer or authorized distributors?
All BUZ111SL-E3045A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ111SL-E3045A meets industry standards.
7.What is the process for return or replacement of BUZ111SL-E3045A?
All BUZ111SL-E3045A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ111SL-E3045A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ111SL-E3045A part is unused and in its original packaging.
Return procedure for BUZ111SL-E3045A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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