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Infineon Technologies BUZ30A
- Part No.:
- BUZ30A
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ30A.pdf
- Description:
- MOSFET N-CH 200V 21A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,090
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Product details
Overview
BUZ30A from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 21 A continuous drain current at TC = 26 °C, and 0.13 Ω maximum RDS(on) at VGS = 10 V and ID = 13.5 A. It features avalanche-rated ruggedness, integrated body diode with 1.2–1.6 V forward voltage at IF = 42 A, and is housed in a Pb-free PG-TO-220-3 package for high-power switching in industrial motor drives.
For engineers reviewing the BUZ30A datasheet, BUZ30A pinout, BUZ30A application, or BUZ30A equivalent, key selection criteria include its 200 V V(BR)DSS rating, 125 W power dissipation at TC = 25 °C, 450 mJ single-pulse avalanche energy (EAS), and thermal resistance RthJC ≤ 1 K/W - all critical for reliable operation in hard-switched DC-DC converters and solenoid drivers.
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports fast switching via low input capacitance (Ciss typ. 1400 pF) and sub-120 ns fall time. Its transconductance (gfs typ. 6–15 S) and dynamic parameters are characterized under standardized conditions: VDD = 30 V, ID = 3 A, RGS = 50 Ω.
The device integrates a robust intrinsic body diode with reverse recovery time trr ≤ 180 ns and Qrr ≤ 1.2 µC, enabling efficient freewheeling in inductive load circuits. Thermal performance is defined by a junction-to-case resistance ≤ 1 K/W and safe operating area validated up to 100 µs pulse width at 25 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - withstands DC bus voltages up to 200 V without breakdown |
| ID (cont) | 21 A at TC = 26 °C - supports continuous load currents typical in 1–2 kW motor control stages |
| RDS(on) max | 0.13 Ω at VGS = 10 V, ID = 13.5 A - limits conduction loss to ≤ 37 W at full current |
| EAS | 450 mJ - sustains single-pulse inductive energy spikes without failure in relay/solenoid snubbing |
| RthJC | ≤ 1 K/W - enables effective heatsinking to maintain Tj ≤ 150 °C under 125 W dissipation |
| VGS(th) | 2.1–4.0 V - ensures clean turn-on with standard 5 V or 10 V gate drivers |
| Ciss | 1400–1900 pF - determines gate drive power requirement and switching speed trade-off |
Pinout & Package
BUZ30A uses the PG-TO-220-3 package: insulated plastic case with three leads, metal tab electrically connected to Drain (Pin 2), and standard TO-220 footprint for mechanical mounting and thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; accepts 0–10 V logic-level signal to modulate channel conductivity |
| Pin 2 | Drain (D) | Main current path output; electrically tied to metal tab for direct heatsink coupling |
| Pin 3 | Source (S) | Reference node for gate drive and current return; common connection point for low-side switching |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guarantees ruggedness against inductive kickback up to 450 mJ single-pulse energy without derating |
| Low RDS(on) at 10 V drive | 0.13 Ω enables <1.5 W conduction loss at 10 A, reducing heatsink size in compact designs |
| Integrated body diode | Rated for 21 A continuous forward current (IS) and 84 A pulsed (ISM), eliminating need for external freewheeling diode |
| Pb-free PG-TO-220-3 package | RoHS-compliant, thermally optimized housing with ≤1 K/W junction-to-case resistance |
| Wide temperature range | Operates from –55 °C to +150 °C junction temperature, suitable for harsh industrial environments |
Applications
| Motor Control | Solenoid & Relay Drivers |
|---|---|
Use Scenario: High-side or low-side switching in 24–48 V brushed DC motor controllers for factory automation. IC Role / Device Role / Timing Role: Power switch controlling motor direction and PWM speed regulation. Use Value: Avalanche rating absorbs back-EMF during abrupt current interruption, preventing destructive voltage spikes. | Use Scenario: Driving 12–48 V industrial solenoids and latching relays requiring fast, repetitive actuation. IC Role / Device Role / Timing Role: Main switching element managing coil energization and controlled turn-off. Use Value: Integrated body diode with trr ≤ 180 ns enables rapid current decay and reduces snubber component count. |
| DC-DC Converters | Power Supplies |
Use Scenario: Primary-side switch in non-isolated buck or boost converters delivering up to 500 W output. IC Role / Device Role / Timing Role: Hard-switched main transistor handling high peak currents and voltage stress. Use Value: 200 V V(BR)DSS and 125 W Ptot support stable operation across wide input voltage ranges with margin. | Use Scenario: Output stage switch in programmable bench power supplies with adjustable current limiting. IC Role / Device Role / Timing Role: Regulating pass element in linear or hybrid regulator topologies. Use Value: Low RDS(on) and tight VGS(th) distribution ensure precise current control and minimal thermal drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V V(BR)DSS, 20 A ID, 0.13 Ω RDS(on), TO-220 package but not avalanche-rated | Lacks specified EAS rating; requires external clamping for inductive loads | Prefer BUZ30A where unclamped inductive switching is present |
| IRF640N | 200 V V(BR)DSS, 18 A ID, 0.18 Ω RDS(on), TO-220, no published EAS value | Higher conduction loss and undefined avalanche capability limit use in high-reliability solenoid control | Choose BUZ30A when 450 mJ EAS and 21 A ID are required for sustained duty cycles |
Compared with STP20NM20 and IRF640N, BUZ30A uniquely combines 200 V rating, 21 A current capability, 0.13 Ω on-resistance, and guaranteed 450 mJ avalanche energy - making it the only option qualified for unclamped inductive switching in industrial motion control without external protection.
Availability
BUZ30A is available at Aetrix Electronics and suitable for motor control, solenoid drivers, DC-DC converters, and programmable power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for BUZ30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ30A belongs to the SIPMOS® family of high-voltage power MOSFETs designed specifically for rugged, high-current switching in industrial automation, motor drives, and power conversion systems.
FAQ
Is BUZ30A suitable for gate driving with 5 V logic?
Yes - BUZ30A has a gate threshold voltage range of 2.1–4.0 V, ensuring reliable turn-on with standard 5 V microcontroller outputs. However, for lowest RDS(on) and optimal switching performance, a 10 V gate drive is recommended per datasheet test conditions.
What is the maximum junction temperature and how is it enforced?
The absolute maximum junction temperature is +150 °C. This limit is enforced through thermal design using the specified RthJC ≤ 1 K/W and RthJA = 75 K/W, requiring appropriate heatsinking to keep Tj within spec under 125 W power dissipation at TC = 25 °C.
Does BUZ30A require an external flyback diode in inductive load circuits?
No - BUZ30A integrates a robust body diode rated for 21 A continuous forward current and 84 A pulsed current, with trr ≤ 180 ns and Qrr ≤ 1.2 µC, making it self-sufficient for freewheeling in most solenoid and motor drive applications.
How does BUZ30A's avalanche rating compare to standard MOSFETs?
BUZ30A is explicitly tested and rated for 450 mJ single-pulse avalanche energy (EAS) under defined conditions (ID = 21 A, VDD = 50 V, L = 1.53 mH). Most general-purpose MOSFETs omit EAS specification, making BUZ30A uniquely qualified for unclamped inductive switching without external protection.
BUZ30A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
BUZ30A FAQ
1.How can I place an order for BUZ30A through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ30A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ30A reliable?
The price and inventory of BUZ30A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ30A is usually 5 days.
3.What payment methods are accepted for BUZ30A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ30A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ30A?
BUZ30A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ30A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ30A?
For technical support, including BUZ30A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ30A requirements.
6.How does Aetrix verify that BUZ30A is sourced from the original manufacturer or authorized distributors?
All BUZ30A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ30A meets industry standards.
7.What is the process for return or replacement of BUZ30A?
All BUZ30A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ30A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ30A part is unused and in its original packaging.
Return procedure for BUZ30A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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