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Infineon Technologies BUZ31
- Part No.:
- BUZ31
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ31.pdf
- Description:
- MOSFET N-CH 200V 14.5A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,744
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Product details
Overview
BUZ31 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 14.5 A continuous drain current at TC = 30 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 9 A. It features avalanche-rated ruggedness (EAS = 200 mJ), integrated body diode with 1.1–1.6 V forward voltage, and TO-220-3 package for industrial switching applications including DC motor drives and SMPS primary-side switches.
For engineers reviewing the BUZ31 datasheet, BUZ31 pinout, BUZ31 application, or BUZ31 equivalent, key selection criteria include its 200 V V(BR)DSS rating, 14.5 A ID capability, 0.2 Ω RDS(on), avalanche energy handling (200 mJ), and thermal resistance (RthJC ≤ 1.32 K/W) in high-reliability power conversion designs.
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports logic-level drive at VGS ≥ 5 V. Its transconductance (gfs = 5–12 S) and low input capacitance (Ciss = 840–1120 pF) enable fast switching in hard-switched topologies.
The integrated body diode exhibits trr = 170 ns and Qrr = 1.1 µC under VR = 100 V, IF = IS, diF/dt = 100 A/µs conditions, supporting moderate-frequency freewheeling in buck and flyback converters without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - withstands DC bus voltages up to 200 V in industrial power supplies and motor control circuits |
| ID (continuous) | 14.5 A at TC = 30 °C - supports sustained load currents in 100–200 W switching stages |
| RDS(on) max | 0.2 Ω at VGS = 5 V, ID = 9 A - limits conduction loss to ≤2.5 W at 5 A, enabling thermally constrained PCB layouts |
| EAS | 200 mJ - sustains single-pulse inductive energy without failure in relay/snubber-free switching |
| Qrr | 1.1 µC - reduces diode recovery loss and EMI in 50–100 kHz flyback and forward converters |
| RthJC | ≤1.32 K/W - allows direct heatsink mounting to maintain Tj < 150 °C at Ptot = 95 W |
| VGS(th) | 2.1–4.0 V - ensures reliable turn-on with standard 5 V microcontroller GPIO or gate drivers |
Pinout & Package
BUZ31 is housed in a Pb-free PG-TO-220-3 package with standard through-hole mounting and isolated tab (drain-connected). Thermal performance relies on mechanical clamping to heatsink via the metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; accepts 0–20 V gate-source voltage; requires <25 Ω series resistance to limit ringing during switching |
| Pin 2 | Drain (D) | Main current path output; electrically connected to metal tab; must be insulated from heatsink unless system ground referenced |
| Pin 3 | Source (S) | Return path for load current; common reference for gate drive; ties to power ground in low-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed single-pulse EAS = 200 mJ enables robustness against inductive kickback without external snubbers |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.5× from 25 °C to 125 °C, improving current sharing in parallel configurations |
| Integrated body diode | IS = 14.5 A continuous, VSD = 1.1–1.6 V - eliminates need for discrete freewheeling diode in many DC-DC topologies |
| ESD-hardened gate | HBM Class 1 rating (≥2 kV) provides handling robustness during manual assembly and board rework |
Applications
| Industrial Motor Drive | Switch-Mode Power Supply |
|---|---|
Use Scenario: Low-voltage DC motor control in conveyor systems and HVAC blowers operating from 24–48 V DC bus. IC Role / Device Role / Timing Role: Low-side N-channel power switch controlling motor winding current with PWM frequency ≤20 kHz. Use Value: 0.2 Ω RDS(on) limits I²R loss to <1.5 W at 5 A, reducing heatsink size and enabling compact enclosure design. | Use Scenario: Primary-side switch in 60–120 W offline flyback converters for industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element turning on/off transformer primary with 50–100 kHz PWM. Use Value: 200 V V(BR)DSS and 200 mJ EAS tolerate reflected voltage spikes and leakage inductance energy without clamping circuitry. |
| DC-DC Converter | Lighting Ballast Control |
Use Scenario: Synchronous rectifier or high-side switch in isolated 12 V–24 V step-down converters for factory automation controllers. IC Role / Device Role / Timing Role: Power stage transistor in half-bridge configuration driving center-tapped transformer secondary. Use Value: Ciss = 840–1120 pF and gfs = 5–12 S support efficient 100–250 kHz switching with minimal gate drive power. | Use Scenario: Lamp current regulation in electronic HID ballasts for industrial high-bay lighting. IC Role / Device Role / Timing Role: Series-pass switch modulating AC lamp current via high-frequency square-wave gating. Use Value: Avalanche rating and 150 °C max junction temperature ensure reliability under hot-start and arc-sustaining conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDS, 20 A ID, 0.12 Ω RDS(on), TO-220 package, no specified EAS rating | Lacks guaranteed avalanche energy spec; higher ID but lower thermal margin at same Ptot | Prefer where peak current >14.5 A matters more than unclamped inductive switching robustness |
| IRF640N | 200 V VDS, 18 A ID, 0.18 Ω RDS(on), TO-220, EAS = 120 mJ (typ) | Lower EAS (120 vs. 200 mJ); slightly faster trr (120 ns) but higher Qrr (1.7 µC) | Choose when diode recovery speed dominates over single-pulse ruggedness in high-frequency SMPS |
Compared with STP20NM20 and IRF640N, BUZ31 delivers superior unclamped inductive switching immunity (200 mJ EAS) and tighter RDS(on) consistency across temperature, making it preferred for motor drives and industrial SMPS where fault transients are frequent and thermal derating is critical.
Availability
BUZ31 is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, DC-DC converters, and lighting ballast control requiring stable component supply and long-term lifecycle assurance.
Supply support for BUZ31 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.
The BUZ31 belongs to Infineon's SIPMOS family-designed specifically for rugged, high-current industrial switching applications demanding high avalanche energy tolerance and stable parametric behavior across temperature.
FAQ
Is BUZ31 suitable for use in a 100 kHz flyback converter primary switch?
Yes. With td(on) ≤20 ns, tr ≤75 ns, and Ciss ≤1120 pF, BUZ31 supports efficient 100 kHz operation. Its 200 V V(BR)DSS and 200 mJ EAS handle typical reflected voltage spikes and leakage inductance energy without external clamping, provided gate drive impedance and layout minimize ringing.
What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?
At TC = 100 °C, BUZ31's continuous ID is derated to approximately 8.5 A (per ID vs. TC curve on Page 5), and its SOA is bounded by RDS(on)-limited conduction (VDS < ID × 0.2 Ω) and pulse-width-limited avalanche (tp ≤ 100 µs for ID > 10 A). DC operation above 6 A requires active heatsinking.
Can BUZ31 replace BUZ11 in an existing design?
Yes, with verification. BUZ31 offers higher VDS (200 V vs. 50 V), higher ID (14.5 A vs. 11 A), and lower RDS(on) (0.2 Ω vs. 0.1 Ω at VGS = 10 V). Gate threshold is similar (2.1–4.0 V), but layout must accommodate higher voltage isolation and revised heatsink mounting due to TO-220-3 mechanical compatibility.
Does BUZ31 require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to dampen oscillation and control dV/dt. For 5–20 A switching with 5 V logic-level drive, a 10–25 Ω series resistor is recommended (per td(on)/tr data with RGS = 50 Ω test condition). Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching losses.
BUZ31 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ31 FAQ
1.How can I place an order for BUZ31 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ31 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ31 reliable?
The price and inventory of BUZ31 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31 is usually 5 days.
3.What payment methods are accepted for BUZ31?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ31?
BUZ31 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ31 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ31?
For technical support, including BUZ31 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31 requirements.
6.How does Aetrix verify that BUZ31 is sourced from the original manufacturer or authorized distributors?
All BUZ31 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31 meets industry standards.
7.What is the process for return or replacement of BUZ31?
All BUZ31 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ31 part is unused and in its original packaging.
Return procedure for BUZ31:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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