Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ31 E3045A

Name: BUZ31 E3045A
Brand: Infineon Technologies
SKU: BUZ31 E3045A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BUZ31 E3045A

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUZ31 E3045A.pdf

Description:: MOSFET N-CH 200V 14.5A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,617

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BUZ31 E3045A from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 14.5 A continuous drain current at TC = 30 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 9 A. It features avalanche-rated ruggedness, integrated body diode with 1.1–1.6 V forward voltage at 29 A, and PG-TO-220-3 package for industrial motor control and DC-DC converter primary-side switching.

For engineers reviewing the BUZ31 E3045A datasheet, BUZ31 E3045A pinout, BUZ31 E3045A application, or BUZ31 E3045A equivalent, key selection criteria include its 200 V V(BR)DSS rating, 95 W power dissipation at TC = 25 °C, 200 mJ single-pulse avalanche energy (EAS), and gate threshold voltage range of 2.1–4.0 V - all critical for reliable high-voltage switching in unregulated bus environments.

Technical Context

This device operates as a normally-off, voltage-controlled unidirectional switch with a planar SIPMOS structure optimized for low conduction loss and robust transient overvoltage handling. Its transconductance (gfs) ranges from 5 to 12 S, and dynamic parameters include Ciss = 840–1120 pF, Crss = 95–150 pF, and trr = 170 ns for the integrated body diode.

The MOSFET supports hard-switched topologies with turn-on delay <20 ns and fall time <80 ns under standard test conditions (VDD = 30 V, ID = 3 A, RGS = 50 Ω). Thermal resistance from junction-to-case is ≤1.32 K/W, enabling direct heatsink mounting in high-power linear or switching regulators.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage margin in 100–160 V DC systems.
I_D (cont)	14.5 A at T_C = 30 °C - Continuous current capability with external heatsinking; derates to zero at 150 °C junction temperature.
R_DS(on)	0.16–0.2 Ω at V_GS = 5 V, I_D = 9 A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current paths.
E_AS	200 mJ - Single-pulse avalanche energy rating; enables operation without external snubbers in inductive load switching.
V_GS(th)	2.1–4.0 V - Gate threshold spread impacts minimum drive voltage margin and noise immunity in gate driver design.
C_iss	840–1120 pF - Input capacitance governs gate charge requirement and switching speed limitations at given drive strength.
T_j range	−55 to +150 °C - Extended temperature capability supports automotive under-hood and industrial ambient deployments.

Pinout & Package

PG-TO-220-3 package with isolated tab (drain-connected), through-hole mounting, and Pb-free finish per RoHS compliance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (HBM Class 1).
Pin 2	Drain (D)	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
Pin 3	Source (S)	Return path for load current; reference node for gate drive; ties to power ground in low-side configurations.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed 200 mJ single-pulse EAS enables safe inductive turn-off without clamping circuits.
Low R_DS(on) at 5 V drive	0.16–0.2 Ω allows use with standard logic-level gate drivers instead of dedicated high-side level shifters.
Integrated body diode	14.5 A continuous / 58 A pulsed reverse diode with 170 ns trr supports synchronous rectification and freewheeling in buck/boost stages.
Thermal robustness	R_thJC ≤ 1.32 K/W permits >90 W dissipation with modest heatsinking - suitable for non-fan-cooled industrial enclosures.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side or low-side main switching element; handles 10–15 A RMS load current with PWM frequencies up to 20 kHz.

Use Value: Avalanche rating eliminates need for external flyback diodes during commutation transients, reducing BOM count and PCB area.

Use Scenario: Primary-side switch in isolated 48 V to 12 V flyback converter for factory automation I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; subjected to repetitive 200 V drain spikes during reset.

Use Value: 200 V V(BR)DSS and 200 mJ EAS ensure reliable operation across line surges and transformer leakage inductance ringing.

Solar Charge Controller

UPS Battery Switch

Use Scenario: MPPT buck-stage switch in 100–150 V PV string input solar charge controllers.

IC Role / Device Role / Timing Role: Unidirectional power switch controlling battery charging current; exposed to partial shading-induced voltage overshoots.

Use Value: −55 to +150 °C T_j range and 1.32 K/W R_thJC support outdoor deployment without active cooling.

Use Scenario: Bidirectional battery disconnect switch in 48 V telecom UPS systems with hot-swap capability.

IC Role / Device Role / Timing Role: Low-side load switch managing 14.5 A continuous discharge; activated during grid failure detection.

Use Value: 0.16 Ω R_DS(on) limits on-state drop to <2.3 V at full load, minimizing thermal stress during extended backup runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DS, 20 A I_D, 0.12 Ω R_DS(on), TO-220FP package (shorter leads, no isolated tab)	Higher current rating but lower avalanche energy (120 mJ vs. 200 mJ); less rugged in inductive turn-off	Prefer when higher continuous current and lower conduction loss are prioritized over surge resilience.
IRF640NPBF	200 V V_DS, 18 A I_D, 0.18 Ω R_DS(on), TO-220AB package (non-isolated tab)	Non-isolated drain tab requires insulating washer; lacks specified EAS rating in datasheet	Choose only if board layout accommodates isolation and system-level testing validates avalanche behavior.

Compared with STP20NM20 and IRF640NPBF, BUZ31 E3045A offers superior single-pulse avalanche immunity and a fully isolated drain tab - making it preferred for safety-critical industrial switching where layout constraints prevent perfect isolation or surge events are frequent.

Availability

BUZ31 E3045A is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, solar charge controllers, and UPS battery switches requiring stable component supply across multi-year production cycles.

Supply support for BUZ31 E3045A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BUZ31 E3045A belongs to the SIPMOS® family of high-voltage power MOSFETs designed specifically for rugged, high-efficiency switching in industrial motor drives and off-line power supplies.

FAQ

Is BUZ31 E3045A suitable for use in a 100 kHz hard-switched flyback converter?

Yes - its 20 ns turn-on delay, 80 ns fall time, and 840–1120 pF Ciss enable efficient operation at 100 kHz with appropriate gate drive strength (≥1 A peak). However, thermal design must account for increased switching losses; junction temperature must remain below 150 °C under worst-case load and ambient conditions.

Does BUZ31 E3045A have a fully isolated drain tab?

Yes - the PG-TO-220-3 package features an electrically isolated metal tab connected exclusively to the drain terminal. This allows direct mechanical mounting to a heatsink without additional insulation, provided the heatsink is not referenced to any other circuit potential.

What is the maximum gate-source voltage rating for BUZ31 E3045A?

The absolute maximum V_GS is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +10 V to +15 V for optimal R_DS(on) and reliability; gate resistors should limit dV/dt to avoid spurious turn-on during high dv/dt events.

Can BUZ31 E3045A replace BUZ31 in legacy designs?

Yes - BUZ31 E3045A is a Pb-free, RoHS-compliant revision of the original BUZ31 with identical electrical specifications, pinout, and package dimensions. No layout or firmware changes are required; thermal performance and avalanche capability are preserved per Rev. 2.4 datasheet.

BUZ31 E3045A Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 9A, 5V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 95W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

BUZ31 E3045A FAQ

1.How can I place an order for BUZ31 E3045A through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ31 E3045A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ31 E3045A reliable?

The price and inventory of BUZ31 E3045A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31 E3045A is usually 5 days.

3.What payment methods are accepted for BUZ31 E3045A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31 E3045A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ31 E3045A?

BUZ31 E3045A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ31 E3045A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ31 E3045A?

For technical support, including BUZ31 E3045A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31 E3045A requirements.

6.How does Aetrix verify that BUZ31 E3045A is sourced from the original manufacturer or authorized distributors?

All BUZ31 E3045A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31 E3045A meets industry standards.

7.What is the process for return or replacement of BUZ31 E3045A?

All BUZ31 E3045A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31 E3045A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ31 E3045A part is unused and in its original packaging.

Return procedure for BUZ31 E3045A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.