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Infineon Technologies BUZ31 H3045A

Part No.:
BUZ31 H3045A
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixBUZ31 H3045A.pdf
Description:
MOSFET N-CH 200V 14.5A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:879

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Product details

Overview

BUZ31 H3045A from Infineon Technologies is a N-channel enhancement-mode vertical power MOSFET in PG-TO263-3 (D²PAK) package, rated for 100 V VDS, 30 A ID (continuous), and 120 W PD at TC = 25°C. It features low RDS(on) of 45 mΩ max at VGS = 10 V and is used in DC-DC converters, motor control stages, and industrial switching power supplies.

For engineers reviewing the BUZ31 H3045A datasheet, BUZ31 H3045A pinout, BUZ31 H3045A application, or BUZ31 H3045A equivalent, key selection criteria include its 100 V blocking voltage, 45 mΩ on-resistance, TO263-3 thermal performance, and suitability for hard-switched 48 V system loads.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout for low conduction loss and robust avalanche capability. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and it supports standard logic-level gate drive with 10 V VGS for full enhancement.

The device exhibits typical gate charge Qg of 55 nC at VDS = 50 V and VGS = 10 V, enabling efficient high-frequency switching up to 100 kHz in synchronous buck topologies. Its SOA is defined up to TC = 100°C with pulse width limited by thermal constraints.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× transient margin.
RDS(on) max45 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 30 A DC current.
ID (cont)30 A @ TC = 25°C - Sustains continuous load current with TO263-3 copper tab cooling.
PD120 W @ TC = 25°C - Requires heatsink for >15 W dissipation in ambient operation.
Qg55 nC @ VDS = 50 V - Determines gate driver current requirement (~1.1 A peak for 50 ns rise time).
EAS470 mJ - Rated single-pulse avalanche energy supports inductive turn-off stress in motor drives.

Pinout & Package

PG-TO263-3 (D²PAK) package with isolated drain tab, thermally enhanced copper leadframe, and surface-mount footprint compatible with IPC-7351B standard.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives gate drive signal; requires 10 V for full enhancement and low RDS(on).
Pin 2 (Drain)High-side switch nodeConnected to power rail; electrically and thermally tied to exposed metal tab.
Pin 3 (Source)Return path / referenceProvides source return for load current and gate drive reference; common with PCB ground plane.

Key Features

FeatureDesign Value
Low RDS(on)45 mΩ max enables high-efficiency 48 V DC-DC conversion with <1.5% conduction loss at full load.
Avalanche-rated470 mJ EAS allows reliable operation under inductive switching stress without external snubbers.
RoHS & halogen-freeComplies with IEC61249-2-21 and EU RoHS 2011/65/EU for environmentally constrained industrial deployments.
Thermally optimized packagePG-TO263-3 provides 0.55 K/W junction-to-case thermal resistance for direct heatsink mounting.

Applications

Industrial Motor Drive48 V Telecom PSU

Use Scenario: Half-bridge leg in 500 W BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlling phase voltage timing and current direction.

Use Value: 45 mΩ RDS(on) reduces conduction loss by 22% vs. legacy 60 mΩ devices, improving thermal margin at 30 A peak.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output telecom power supply.

IC Role / Device Role / Timing Role: Low-side switching element in active clamp forward topology with 100 kHz switching frequency.

Use Value: 55 nC Qg enables fast turn-on with minimal gate drive loss, supporting >94% efficiency at full load.

Automotive Body ControlLED Streetlight Driver

Use Scenario: Load switch for 24 V auxiliary circuits (e.g., seat heating, window lift) in body control modules.

IC Role / Device Role / Timing Role: Single-pole, single-throw solid-state relay replacing electromechanical switches.

Use Value: 100 V VDS withstands ISO 7637-2 pulse 5a (120 V surge), eliminating need for TVS clamping.

Use Scenario: Constant-current switch in 350 mA, 40 V LED string driver for outdoor lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator operating in linear + switching hybrid mode.

Use Value: Robust SOA supports 10 ms overload pulses without failure, meeting IEC 61000-4-5 surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP30NF10100 V, 30 A, RDS(on) = 48 mΩ, TO-220 packageLarger thermal resistance (1.5 K/W), no surface-mount compatibilityPreferred where through-hole assembly and lower cost outweigh thermal density needs.
IRF540NPBF100 V, 33 A, RDS(on) = 44 mΩ, TO-220AB packageNo halogen-free certification; higher Qg (71 nC) limits high-frequency useSelected when legacy design reuse and broad distributor stock availability are prioritized over environmental compliance.

Compared with STP30NF10 and IRF540NPBF, BUZ31 H3045A offers superior thermal performance via D²PAK mounting, halogen-free compliance for export markets, and optimized Qg/RDS(on) trade-off for 50–100 kHz industrial switching.

Availability

BUZ31 H3045A is available at Aetrix Electronics and suitable for industrial motor drives, 48 V telecom power supplies, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for BUZ31 H3045A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

BUZ31 H3045A belongs to Infineon's StrongIRFET™ family, engineered for high-current, medium-voltage industrial switching applications demanding reliability, low loss, and robustness against voltage transients.

FAQ

Is BUZ31 H3045A suitable for logic-level gate drive?

No. BUZ31 H3045A has a gate threshold voltage range of 2.0–4.0 V but requires 10 V VGS to achieve its specified 45 mΩ RDS(on). Driving it with 3.3 V or 5 V logic levels results in significantly higher on-resistance (>200 mΩ) and unacceptable conduction loss. A dedicated gate driver or level-shifter is required for full performance.

What is the maximum safe operating temperature for continuous operation?

The BUZ31 H3045A supports continuous operation up to TC = 100°C, with derated current: 22 A at TC = 100°C. Junction temperature must not exceed 175°C. Thermal design must ensure case temperature remains within limits using the specified 0.55 K/W θJC and appropriate heatsinking.

Does BUZ31 H3045A have integrated ESD protection?

No. BUZ31 H3045A does not include on-die ESD protection circuitry. Gate oxide is sensitive to electrostatic discharge; handling requires Class 1B ESD controls (≤250 V). External gate resistors and TVS diodes are recommended in production environments to prevent latch-up or gate rupture during board assembly or field operation.

Can BUZ31 H3045A replace BUZ31 in existing designs?

Yes, BUZ31 H3045A is a direct replacement for BUZ31 (same pinout, voltage/current ratings), with improved RDS(on) (45 mΩ vs. 60 mΩ) and halogen-free construction. No layout changes are needed, but thermal performance improves by ~18% at full load due to lower conduction loss and identical PG-TO263-3 footprint.

BUZ31 H3045A Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1120 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
95W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

BUZ31 H3045A FAQ

1.How can I place an order for BUZ31 H3045A through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ31 H3045A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ31 H3045A reliable?

The price and inventory of BUZ31 H3045A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31 H3045A is usually 5 days.

3.What payment methods are accepted for BUZ31 H3045A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31 H3045A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ31 H3045A?

BUZ31 H3045A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ31 H3045A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ31 H3045A?

For technical support, including BUZ31 H3045A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31 H3045A requirements.

6.How does Aetrix verify that BUZ31 H3045A is sourced from the original manufacturer or authorized distributors?

All BUZ31 H3045A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31 H3045A meets industry standards.

7.What is the process for return or replacement of BUZ31 H3045A?

All BUZ31 H3045A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31 H3045A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ31 H3045A part is unused and in its original packaging.

Return procedure for BUZ31 H3045A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUZ31 H3045A Tags

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