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Infineon Technologies BUZ31H3046XKSA1
- Part No.:
- BUZ31H3046XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
BUZ31H3046XKSA1.pdf
- Description:
- MOSFET N-CH 200V 14.5A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,700
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Product details
Overview
BUZ31H3046XKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 14.5 A continuous drain current at TC = 30 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 9 A. It features avalanche-rated ruggedness (EAS = 200 mJ), integrated body diode with 1.1–1.6 V forward voltage, and TO-262-3 (PG-TO-262-3) package for high-power switching in industrial motor drives.
For engineers reviewing the BUZ31H3046XKSA1 datasheet, BUZ31H3046XKSA1 pinout, BUZ31H3046XKSA1 application, or BUZ31H3046XKSA1 equivalent, key selection criteria include its 200 V V(BR)DSS rating, 14.5 A ID capability, 0.2 Ω RDS(on), avalanche energy handling (200 mJ), and thermal resistance (RthJC ≤ 1.32 K/W) for reliable operation in high-current DC-DC and motor control circuits.
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports logic-level gate drive (VGS = 5 V). Its transconductance (gfs = 5–12 S) and low output capacitance (Coss = 180–270 pF) enable fast switching with td(on) ≤ 20 ns and tf ≤ 80 ns under standard test conditions.
The integrated body diode exhibits trr = 170 ns and Qrr = 1.1 µC, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by RthJC ≤ 1.32 K/W and Ptot = 95 W at TC = 25 °C, with derating to zero at TC = 160 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands up to 200 V drain-to-source voltage before breakdown, enabling use in 100–120 VAC line-fed SMPS and 48 V industrial bus systems. |
| ID (continuous) | 14.5 A at TC = 30 °C - Supports sustained load currents typical of BLDC motor phase switches and high-current solenoid drivers. |
| RDS(on) max | 0.2 Ω at VGS = 5 V, ID = 9 A - Delivers low conduction loss (< 26 W at 14.5 A) for thermally constrained PCB layouts. |
| EAS | 200 mJ - Rated for single-pulse inductive energy absorption without failure, critical for relay/snubberless inductive load switching. |
| Ciss | 840–1120 pF - Determines gate drive strength requirement; compatible with standard 1–2 A peak gate drivers. |
| trr / Qrr | 170 ns / 1.1 µC - Enables efficient freewheeling in flyback and half-bridge converters with minimal reverse recovery loss. |
| RthJC | ≤ 1.32 K/W - Allows direct heatsink mounting for high-power dissipation with predictable junction temperature rise. |
Pinout & Package
BUZ31H3046XKSA1 is housed in a PG-TO-262-3 (SIPMOS) package with three leads: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The exposed drain tab provides low-thermal-resistance path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Controls channel conduction; requires ≤ ±20 V gate-source voltage; input capacitance Ciss dominates drive timing. |
| Pin 2 (D) | Drain terminal | High-side connection point; electrically tied to metal tab for thermal and electrical sinking; handles full VDS stress. |
| Pin 3 (S) | Source terminal | Reference node for gate drive; connects to power ground or low-side switch node; carries full ID current. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed single-pulse EAS = 200 mJ enables robust switching into inductive loads without external snubbers. |
| Logic-level gate drive | VGS(th) = 2.1–4.0 V and RDS(on) fully specified at VGS = 5 V, allowing direct interface with microcontrollers and gate drivers. |
| Integrated body diode | Rated IS = 14.5 A continuous with VSD = 1.1–1.6 V, eliminating need for external freewheeling diodes in H-bridge and buck topologies. |
| Pb-free & halogen-free | RoHS-compliant lead plating and IEC61249-2-21 halogen-free construction meet industrial environmental compliance requirements. |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
Use Scenario: Driving 3-phase BLDC motors in HVAC blowers and conveyor systems with 48–100 VDC bus. IC Role / Device Role / Timing Role: High-side/low-side power switch in 6-step commutation; handles 14.5 A phase current with < 200 ns switching transitions. Use Value: Avalanche rating absorbs back-EMF spikes during abrupt current interruption, reducing system-level overvoltage risk. | Use Scenario: Primary-side switch in isolated 400 W flyback or forward converter for industrial PLC power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz; withstands 200 V reflected primary voltage with low RDS(on) conduction loss. Use Value: Low Coss and Crss minimize switching loss and EMI generation while maintaining ZVS compatibility in resonant designs. |
| Solenoid & Relay Drivers | UPS Inverter Stages |
Use Scenario: Controlling 24–48 VDC solenoids and contactors in factory automation I/O modules. IC Role / Device Role / Timing Role: Single-ended inductive load switch; clamps inductive kickback via internal avalanche capability. Use Value: Eliminates need for external TVS or snubber components, reducing BOM count and PCB area in space-constrained modules. | Use Scenario: Half-bridge leg in 1–3 kVA online UPS inverters converting 360–400 VDC bus to 230 VAC output. IC Role / Device Role / Timing Role: High-efficiency power stage switch with low RDS(on) and fast turn-off (tf ≤ 80 ns) to minimize dead-time losses. Use Value: Integrated body diode with low Qrr reduces shoot-through risk and improves efficiency during PWM dead-time intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF640NPBF | VDS = 200 V, RDS(on) = 0.18 Ω (at VGS = 10 V), no avalanche rating, higher gate charge (Qg = 67 nC). | Lacks EAS specification; unsuitable for unclamped inductive switching without external protection. | Prefer BUZ31H3046XKSA1 where avalanche ruggedness is required; IRF640NPBF may be used only in resistive or lightly inductive loads with snubbers. |
| STP20NM20 | VDS = 200 V, RDS(on) = 0.22 Ω (at VGS = 10 V), EAS = 120 mJ, higher RthJA (75 K/W vs. 1.32 K/W RthJC). | Lower avalanche energy and higher thermal resistance limit continuous power handling in compact heatsink designs. | BUZ31H3046XKSA1 offers superior thermal performance and 67% higher EAS, making it preferred for high-reliability motor and UPS applications. |
Compared with IRF640NPBF and STP20NM20, BUZ31H3046XKSA1 delivers higher avalanche robustness (200 mJ), lower thermal resistance (RthJC ≤ 1.32 K/W), and verified logic-level drive compatibility-critical for compact, high-reliability industrial power stages where thermal margin and inductive fault tolerance are design constraints.
Availability
BUZ31H3046XKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and solenoid/relay driver modules requiring stable component supply across multi-year production cycles.
Supply support for BUZ31H3046XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ31H3046XKSA1 belongs to the SIPMOS® family of high-voltage power MOSFETs designed specifically for rugged, high-current switching in industrial automation, motor control, and uninterruptible power systems.
FAQ
Is BUZ31H3046XKSA1 suitable for 100 kHz switching applications?
Yes. With td(on) ≤ 20 ns, tr ≤ 75 ns, and Ciss ≤ 1120 pF, BUZ31H3046XKSA1 supports clean 100 kHz switching in hard-switched topologies when paired with ≥ 1.5 A peak gate drivers. Its low Crss minimizes Miller-induced shoot-through risk at high dv/dt.
What is the maximum safe operating temperature for continuous operation?
The device supports continuous operation up to Tj = +150 °C. At TC = 100 °C, ID derates to ~8.5 A (per Fig. Page 4), and RDS(on) increases to ~0.28 Ω. Full 14.5 A current is only rated at TC ≤ 30 °C per datasheet limits.
Does BUZ31H3046XKSA1 require a gate resistor for stability?
Yes. A series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent oscillation. The gate threshold voltage (2.1–4.0 V) and input capacitance (Ciss) make it susceptible to noise without proper gate drive impedance control.
Can BUZ31H3046XKSA1 replace BUZ31H3046 in existing designs?
Yes. BUZ31H3046XKSA1 is the RoHS-compliant, halogen-free, Pb-free variant of BUZ31H3046 (Rev. 2.0). Electrical specifications, package dimensions, pinout, and thermal performance are identical; only material composition differs per environmental compliance standards.
BUZ31H3046XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3-1
BUZ31H3046XKSA1 FAQ
1.How can I place an order for BUZ31H3046XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ31H3046XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ31H3046XKSA1 reliable?
The price and inventory of BUZ31H3046XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31H3046XKSA1 is usually 5 days.
3.What payment methods are accepted for BUZ31H3046XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31H3046XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ31H3046XKSA1?
BUZ31H3046XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ31H3046XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ31H3046XKSA1?
For technical support, including BUZ31H3046XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31H3046XKSA1 requirements.
6.How does Aetrix verify that BUZ31H3046XKSA1 is sourced from the original manufacturer or authorized distributors?
All BUZ31H3046XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31H3046XKSA1 meets industry standards.
7.What is the process for return or replacement of BUZ31H3046XKSA1?
All BUZ31H3046XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31H3046XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ31H3046XKSA1 part is unused and in its original packaging.
Return procedure for BUZ31H3046XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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