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Infineon Technologies BUZ31HXKSA1
- Part No.:
- BUZ31HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ31HXKSA1.pdf
- Description:
- MOSFET N-CH 200V 14.5A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,993
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Product details
Overview
BUZ31HXKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 14.5 A continuous drain current at TC = 30 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 9 A. It features avalanche-rated ruggedness (EAS = 200 mJ), integrated body diode with 1.1–1.6 V forward voltage, and TO-220-3 package for industrial motor control and DC-DC converter primary-side switching.
For engineers reviewing the BUZ31HXKSA1 datasheet, BUZ31HXKSA1 pinout, BUZ31HXKSA1 application, or BUZ31HXKSA1 equivalent, key selection criteria include its 200 V V(BR)DSS rating, 14.5 A ID capability, 0.2 Ω RDS(on), avalanche energy handling (200 mJ), and thermal resistance (RthJC ≤ 1.32 K/W) in high-reliability power switching designs.
Technical Context
This device operates as a unidirectional high-voltage power switch with gate-controlled turn-on/turn-off. Its transconductance (gfs = 5–12 S) and low input capacitance (Ciss = 840–1120 pF) support fast switching in hard-switched topologies, while the integrated body diode enables freewheeling in flyback and buck converters.
The MOSFET's avalanche rating is validated under defined test conditions (ID = 14.5 A, VDD = 50 V, L = 1.42 mH, RGS = 25 Ω), and its RDS(on) exhibits positive temperature coefficient-increasing from ~0.16 Ω at 25 °C to ~0.45 Ω at 150 °C-enabling inherent current sharing in parallel configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage headroom in 100–150 V DC systems. |
| ID (continuous) | 14.5 A at TC = 30 °C - Continuous conduction limit with heatsink; derates to zero at TC = 120 °C per curve on Page 5. |
| RDS(on) | 0.16–0.2 Ω at VGS = 5 V, ID = 9 A - On-state resistance directly impacts conduction loss (Pcond = I² × RDS(on)) and junction temperature rise. |
| EAS | 200 mJ - Single-pulse avalanche energy rating; enables robustness against inductive load turn-off transients without external snubbers. |
| Ciss | 840–1120 pF at VDS = 25 V - Input capacitance determines gate drive power requirement and switching speed trade-offs. |
| VGS(th) | 2.1–4.0 V - Gate threshold voltage range; ensures reliable turn-on with standard 5 V logic-level drivers while avoiding spurious turn-on near 0 V. |
| RthJC | ≤1.32 K/W - Junction-to-case thermal resistance; defines minimum heatsink interface performance needed to maintain Tj ≤ 150 °C. |
Pinout & Package
BUZ31HXKSA1 is housed in a PG-TO-220-3 package with standard lead frame layout: Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The drain-connected tab is electrically tied to Pin 2 and serves as primary thermal path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; requires ≥5 V drive for full enhancement; sensitive to ESD (HBM Class 1). |
| Pin 2 | Drain (D) | Main high-side current path; connected to heatsink tab; carries full switched current and avalanche energy. |
| Pin 3 | Source (S) | Reference node for gate drive; common return for load current; forms body diode anode. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Validated single-pulse EAS = 200 mJ under defined inductive switching conditions-reduces need for external clamping circuits. |
| Low RDS(on) at 5 V drive | 0.16 Ω typ. enables efficient switching with standard microcontroller GPIO or low-voltage gate drivers without level-shifting. |
| Integrated body diode | 14.5 A continuous / 58 A pulsed reverse diode with VSD = 1.1–1.6 V supports freewheeling in non-synchronous converters. |
| Pb-free & halogen-free | RoHS-compliant plating and IEC61249-2-21 halogen-free construction meet industrial environmental compliance requirements. |
Applications
| Motor Drive Inverter | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: High-side power switch controlling phase current commutation; handles repetitive 14.5 A loads with 200 V bus margin. Use Value: Avalanche rating absorbs back-EMF spikes during abrupt current interruption, eliminating need for discrete TVS protection. | Use Scenario: Primary-side switch in isolated 48 V to 12 V flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Main power transistor operating at 100–200 kHz; switches 10–12 A peak current with <20 ns rise/fall times. Use Value: Low Ciss and fast tr/tf reduce gate drive losses and improve efficiency above 100 kHz switching frequencies. |
| Uninterruptible Power Supply | LED Driver Power Stage |
Use Scenario: Battery-charging FET and inverter output stage in 120 VAC online UPS units. IC Role / Device Role / Timing Role: Bidirectional switching element managing AC line sync and battery discharge paths; sustains 150 °C junction temperature. Use Value: RthJC ≤ 1.32 K/W allows direct mounting to shared heatsink with other power stages, reducing thermal management complexity. | Use Scenario: Constant-current switch in high-bay LED driver with 100–200 V DC bus. IC Role / Device Role / Timing Role: PWM-controlled current regulator driving 10–15 A LED strings; operates in linear region during dimming transitions. Use Value: Positive RDS(on) temperature coefficient prevents thermal runaway during analog dimming or fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | VDS = 200 V, RDS(on) = 0.22 Ω (max), no published EAS rating | Lacks validated avalanche energy spec; requires external clamping in inductive switching | Lower cost where avalanche stress is absent or externally managed |
| IRF640NPBF | VDS = 200 V, RDS(on) = 0.18 Ω (max), EAS = 170 mJ (typ) | 170 mJ EAS vs. 200 mJ; higher Ciss (1100–1400 pF) increases gate drive demand | Acceptable where lower gate charge is not critical and 30 mJ EAS margin is sufficient |
Compared with STP20NM20 and IRF640NPBF, BUZ31HXKSA1 offers superior avalanche ruggedness (200 mJ), tighter RDS(on) tolerance (0.16–0.2 Ω), and lower Ciss, making it preferred for unclamped inductive loads and high-frequency, high-reliability industrial power stages.
Availability
BUZ31HXKSA1 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, uninterruptible power supplies, and LED driver power stages requiring stable component supply across multi-year production cycles.
Supply support for BUZ31HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ31HXKSA1 belongs to the SIPMOS® family of high-voltage power MOSFETs engineered for rugged, high-efficiency switching in industrial motor drives, UPS systems, and off-line power supplies.
FAQ
Is BUZ31HXKSA1 suitable for 5 V logic-level gate drive?
Yes. With VGS(th) ranging from 2.1–4.0 V and RDS(on) specified at VGS = 5 V, BUZ31HXKSA1 achieves full enhancement using standard 5 V microcontroller outputs or logic-level drivers without gate voltage boosting.
What is the maximum safe operating temperature for continuous operation?
The device supports continuous operation up to Tj = 150 °C. Derating curves on Page 5 show that at TC = 100 °C, continuous ID drops to ~6.5 A; proper heatsinking must maintain case temperature within limits to avoid exceeding this junction temperature.
Does BUZ31HXKSA1 include an integrated body diode?
Yes. It features a monolithic N-channel MOSFET with an integrated parasitic body diode (source-drain diode), rated for 14.5 A continuous and 58 A pulsed forward current, with VSD = 1.1–1.6 V at IF = 29 A and Tj = 25 °C.
How does the avalanche rating impact system design?
The 200 mJ single-pulse EAS rating allows BUZ31HXKSA1 to safely absorb inductive energy during turn-off without external snubbers-critical in relay drivers, solenoid controls, and motor phase commutation where voltage spikes exceed VDS rating.
BUZ31HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ31HXKSA1 FAQ
1.How can I place an order for BUZ31HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ31HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ31HXKSA1 reliable?
The price and inventory of BUZ31HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31HXKSA1 is usually 5 days.
3.What payment methods are accepted for BUZ31HXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31HXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ31HXKSA1?
BUZ31HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ31HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ31HXKSA1?
For technical support, including BUZ31HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31HXKSA1 requirements.
6.How does Aetrix verify that BUZ31HXKSA1 is sourced from the original manufacturer or authorized distributors?
All BUZ31HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31HXKSA1 meets industry standards.
7.What is the process for return or replacement of BUZ31HXKSA1?
All BUZ31HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ31HXKSA1 part is unused and in its original packaging.
Return procedure for BUZ31HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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