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Infineon Technologies BUZ31L
- Part No.:
- BUZ31L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ31L.pdf
- Description:
- MOSFET N-CH 200V 13.5A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,106
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Product details
Overview
BUZ31L from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 13.5 A continuous drain current at TC = 28 °C, and 0.2 Ω maximum RDS(on) at VGS = 5 V and ID = 7 A. It features logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), avalanche energy rating (EAS = 200 mJ), and integrated body diode with 1.2–1.6 V forward voltage at IF = 27 A - used in DC-DC converters, motor control H-bridges, and industrial power switching.
For engineers reviewing the BUZ31L datasheet, BUZ31L pinout, BUZ31L application, or BUZ31L equivalent, key selection criteria include its 200 V breakdown rating, 13.5 A thermal-current capability, logic-level gate threshold, avalanche ruggedness, and TO-220-3 package thermal resistance (RthJC ≤ 1.32 K/W).
Technical Context
This MOSFET operates in enhancement mode with a low-threshold gate structure enabling direct microcontroller-level drive (≥3.5 V sufficient for full conduction). Its avalanche-rated design supports unclamped inductive switching without external snubbers in relay drivers and solenoid controls.
The device integrates a fast-recovery body diode (trr = 180 ns, Qrr = 1.2 µC) and exhibits stable RDS(on) over temperature (0.16 Ω typ at 25 °C, rising to ~0.35 Ω at 150 °C), supporting reliable operation in thermally constrained industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 100 V DC bus designs with 2× safety margin against transients |
| ID (continuous) | 13.5 A at TC = 28 °C - enables 150 W+ switching at 12–48 V input with heatsink |
| RDS(on) max | 0.2 Ω at VGS = 5 V, ID = 7 A - yields ≤10 W conduction loss at 7 A |
| VGS(th) | 1.2–2.0 V - compatible with 3.3 V and 5 V logic outputs without level shifting |
| EAS | 200 mJ - withstands single-pulse inductive energy up to L·I²/2 = 200 mJ (e.g., 1.65 mH × 13.5² A² / 2) |
| trr / Qrr | 180 ns / 1.2 µC - minimizes diode recovery losses in synchronous rectification |
| RthJC | ≤1.32 K/W - allows ≥70 W dissipation with 95 °C case-to-ambient ΔT using standard TO-220 heatsink |
Pinout & Package
BUZ31L is housed in a Pb-free PG-TO220-3 package with isolated tab (drain-connected), requiring mechanical mounting to heatsink with electrical isolation if needed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Logic-level input; requires <20 V absolute max; low input capacitance (Ciss = 1200–1600 pF) eases driver sizing |
| Pin 2 (D) | Drain | High-side or low-side switch node; connected to metal tab - electrically active unless isolated |
| Pin 3 (S) | Source | Power return path; referenced to gate drive ground; carries full load current and diode reverse recovery charge |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche energy rating | EAS = 200 mJ ensures robustness against inductive kickback in relay/solenoid drivers without snubber circuits |
| Logic-level gate threshold | VGS(th) = 1.2–2.0 V enables direct drive from MCU GPIOs (3.3 V/5 V), reducing BOM count vs. gate drivers |
| Low RDS(on) at 5 V drive | 0.16 Ω typ at VGS = 5 V cuts conduction loss by >30% vs. standard 10 V gate MOSFETs in same package |
| Fast body diode | trr = 180 ns and Qrr = 1.2 µC reduce switching loss and EMI in freewheeling paths of buck converters |
| Thermal performance | RthJC ≤ 1.32 K/W supports high-power density layouts with minimal heatsink volume in industrial SMPS |
Applications
| Motor Control | DC-DC Conversion |
|---|---|
Use Scenario: Half-bridge driving of 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles bidirectional current and regenerative braking via body diode. Use Value: Avalanche rating absorbs back-EMF spikes during rapid deceleration; 13.5 A rating supports peak torque currents up to 20 A pulsed. | Use Scenario: Synchronous rectifier in 48 V input, 12 V output isolated flyback converter for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven with precise timing relative to primary MOSFET. Use Value: Low RDS(on) reduces conduction loss below 0.5 W at 10 A; fast trr minimizes cross-conduction loss during dead-time transitions. |
| Industrial Relay Replacement | Solenoid Driver |
Use Scenario: Solid-state replacement for 24 V AC/DC electromechanical relays in PLC I/O modules. IC Role / Device Role / Timing Role: High-side or low-side load switch controlling resistive/inductive loads up to 300 W. Use Value: Integrated avalanche capability eliminates need for external TVS/clamp; 200 V rating covers surge immunity per IEC 61000-4-5 Level 3. | Use Scenario: Pulse-width modulated 24 V solenoid actuator in fluid control valves for HVAC and process instrumentation. IC Role / Device Role / Timing Role: Low-side switch with controlled turn-on/off to limit inrush and suppress coil voltage overshoot. Use Value: 210–270 ns turn-off delay enables precise PWM edge control; EAS rating sustains repeated inductive turn-off stress without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK60ZFP | 600 V VDS, 14 A ID, RDS(on) = 0.42 Ω @ 10 V - higher voltage, higher RDS(on), non-logic-level | Requires gate driver for 3.3 V MCU; suited for 400 V PFC stages, not 24–48 V logic-switched loads | Select only if 600 V rating and ZVS capability are required; not drop-in for BUZ31L's logic-drive use cases |
| IRFZ44NPBF | 55 V VDS, 49 A ID, RDS(on) = 0.028 Ω @ 10 V - lower voltage, higher current, non-logic-level (VGS(th) = 2–4 V) | Needs 10 V gate drive; unsuitable for 200 V bus; better for 12 V automotive loads | Use only in ≤55 V systems where ultra-low RDS(on) outweighs voltage limitation and gate drive overhead |
Compared with STP14NK60ZFP and IRFZ44NPBF, BUZ31L uniquely balances 200 V rating, logic-level gate, and 0.2 Ω RDS(on) - making it optimal for 24–48 V industrial switching where gate simplicity and avalanche safety are critical.
Availability
BUZ31L is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, industrial relay replacement, and solenoid driver applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for BUZ31L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
BUZ31L belongs to Infineon's SIPMOS® logic-level power MOSFET product line, engineered for high-reliability industrial switching where avalanche ruggedness, low gate drive voltage, and thermal stability are essential.
FAQ
Is BUZ31L suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed turn-on at VGS ≥ 3.5 V, BUZ31L fully conducts at 3.3 V logic levels. Its low input capacitance (Ciss ≤ 1600 pF) also limits required gate charge, enabling direct drive from most MCU GPIOs without external buffers.
What is the maximum safe operating temperature for continuous operation?
The BUZ31L has a maximum junction temperature of +150 °C and specified continuous drain current derating begins at TC = 28 °C. For sustained 13.5 A operation, the case temperature must be held ≤28 °C via heatsinking; at TC = 100 °C, ID drops to ~6.5 A per the derating curve on page 5 of the datasheet.
Does BUZ31L have a built-in body diode, and what are its key parameters?
Yes. BUZ31L integrates a fast-recovery epitaxial body diode rated for 13.5 A continuous forward current (IS) and 54 A pulsed (ISM). Its forward voltage is 1.2–1.6 V at IF = 27 A, reverse recovery time is 180 ns, and reverse recovery charge is 1.2 µC - enabling efficient freewheeling in buck and half-bridge topologies.
Can BUZ31L replace BUZ31 in existing designs?
Yes, BUZ31L is a Pb-free, improved version of BUZ31 with identical pinout, ratings, and performance. Key enhancements include RoHS compliance, tighter RDS(on) distribution (0.16 Ω typ vs. 0.22 Ω typ), and updated avalanche testing - allowing direct drop-in replacement without layout or firmware changes.
BUZ31L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 95W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ31L FAQ
1.How can I place an order for BUZ31L through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ31L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ31L reliable?
The price and inventory of BUZ31L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31L is usually 5 days.
3.What payment methods are accepted for BUZ31L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ31L?
BUZ31L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ31L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ31L?
For technical support, including BUZ31L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31L requirements.
6.How does Aetrix verify that BUZ31L is sourced from the original manufacturer or authorized distributors?
All BUZ31L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31L meets industry standards.
7.What is the process for return or replacement of BUZ31L?
All BUZ31L units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ31L part is unused and in its original packaging.
Return procedure for BUZ31L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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