Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BUZ31L E3044A

Part No.:
BUZ31L E3044A
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUZ31L E3044A.pdf
Description:
MOSFET N-CH 200V 13.5A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,407

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BUZ31L E3044A from Infineon Technologies is an N-channel logic-level SIPMOS power MOSFET rated for 200 V VDS, 13.5 A continuous drain current, and 0.16 Ω typical RDS(on) at VGS = 5 V; designed for high-reliability DC-DC converters, motor control H-bridges, and industrial solid-state relays requiring avalanche ruggedness and low gate drive voltage.

For engineers reviewing the BUZ31L E3044A datasheet, BUZ31L E3044A pinout, BUZ31L E3044A application, or BUZ31L E3044A equivalent, this part supports logic-level gate drive (VGS(th) = 1.2–2.0 V), delivers 200 mJ single-pulse avalanche energy, and operates across –55 °C to +150 °C junction temperature with Pb-free PG-TO220-3 packaging.

Technical Context

This discrete power transistor uses enhancement-mode silicon planar technology with integrated body diode and avalanche-rated operation. Its gate threshold voltage (1.2–2.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers, while its 1.32 K/W thermal resistance (RthJC) supports high-power switching up to 95 W at TC = 25 °C.

The device exhibits 1200–1600 pF input capacitance (Ciss) and 100–150 pF reverse transfer capacitance (Crss) at VDS = 25 V, enabling predictable switching behavior in hard-switched topologies. Its 180 ns reverse recovery time (trr) and 1.2 µC reverse recovery charge (Qrr) are specified under standardized di/dt conditions (100 A/µs).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - Maximum blocking voltage for DC-DC primary-side switches and 24/48 V industrial bus protection.
ID (continuous) 13.5 A at TC = 28 °C - Sustains full-load current in motor drivers without forced cooling.
RDS(on) 0.16 Ω typ. at VGS = 5 V - Enables <1.1 W conduction loss at 13.5 A, reducing heatsink requirements.
EAS 200 mJ single-pulse - Withstands inductive turn-off surges in relay replacement and solenoid drive circuits.
tr/tf 80–120 ns / 65–85 ns - Supports >100 kHz PWM in SMPS with controlled dv/dt and reduced EMI.
VGS(th) 1.2–2.0 V - Compatible with 3.3 V GPIOs; eliminates need for level-shifting gate drivers.
Tj range –55 °C to +150 °C - Qualified for under-hood automotive auxiliary loads and industrial PLC output stages.

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected); standard through-hole mounting and heatsink interface. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate High-impedance MOSFET control terminal; requires ≤20 V absolute max rating and low-inductance gate loop for stable switching.
Pin 2 Drain Main high-side power terminal; electrically connected to metal tab-must be insulated from heatsink unless referenced to system ground.
Pin 3 Source Power return path and gate reference node; forms common source configuration with gate drive referenced to this pin.

Key Features

Feature Design Value
Avalanche-rated operation 200 mJ single-pulse EAS ensures robustness against inductive kickback without external snubbers.
Logic-level gate drive VGS(th) ≤ 2.0 V enables direct connection to 3.3 V/5 V MCU outputs without gate driver ICs.
Low RDS(on) at 5 V 0.16 Ω typical reduces I²R losses by >30% vs. standard 10 V-gate MOSFETs at same current.
Integrated body diode 13.5 A continuous forward current (IS) and 1.2–1.6 V VSD support freewheeling in half-bridge configurations.
Pb-free PG-TO220-3 RoHS-compliant leadframe and solderable finish compatible with standard wave/reflow assembly processes.

Applications

Motor Control DC-DC Conversion

Use Scenario: Bidirectional 24 V brushed DC motor drive in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; handles 13.5 A stall current and 54 A pulsed surge.

Use Value: Avalanche rating absorbs back-EMF during rapid direction reversal; logic-level gate simplifies MCU interface.

Use Scenario: Primary-side switch in 48 V input, 12 V output flyback converter for telecom power supplies.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100 kHz with 50 V VDD clamping during transients.

Use Value: 200 mJ EAS prevents failure during output short-circuit events; 0.16 Ω RDS(on) maintains >92% efficiency at full load.

Solid-State Relay Industrial Load Switching

Use Scenario: Replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Main load switch controlling resistive/heating loads up to 2.7 kW at 200 V AC (with bridge rectifier).

Use Value: 150 °C Tj rating allows operation in sealed enclosures; low gate charge enables fast on/off transitions for pulse-width modulated heating control.

Use Scenario: High-current power distribution switch in factory automation I/O racks.

IC Role / Device Role / Timing Role: Hot-swap and overload-protected main power switch with integrated body diode freewheeling.

Use Value: 13.5 A continuous current and 54 A pulsed rating support peak inrush of solenoids and contactors; TO220 mechanical robustness ensures long-term field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP14NK60ZFP 600 V VDS, 14 A ID, 0.42 Ω RDS(on) at 10 V - higher voltage rating but requires 10 V gate drive. Not logic-level; needs gate driver for 3.3 V MCU use; better suited for offline SMPS than low-voltage motor control. Select only if >400 V blocking is required and gate drive voltage ≥10 V is available.
IRFZ44NPBF 55 V VDS, 49 A ID, 0.028 Ω RDS(on) at 10 V - lower voltage, higher current, but not avalanche-rated. Lacks EAS specification; unsuitable for inductive switching without external protection components. Prefer for high-current, low-voltage DC loads where avalanche stress is absent and gate drive ≥10 V is assured.

Compared with STP14NK60ZFP and IRFZ44NPBF, BUZ31L E3044A uniquely combines 200 V rating, logic-level drive, and certified avalanche capability-making it optimal for 24–48 V industrial switching where reliability under transient overvoltage is critical.

Availability

BUZ31L E3044A is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and solid-state relay applications requiring stable component supply, long-lifecycle support, and RoHS-compliant through-hole power transistors.

Supply support for BUZ31L E3044A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BUZ31L belongs to Infineon's SIPMOS logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial automation, motor drives, and power supply systems where low gate drive voltage and avalanche ruggedness are essential.

FAQ

Is BUZ31L E3044A pin-compatible with BUZ31L without the E3044A suffix?

Yes-E3044A is Infineon's internal manufacturing code indicating a specific wafer fab and assembly lot; electrical specifications, pinout, and package dimensions match the base BUZ31L designation exactly. No design changes or compatibility concerns exist between versions.

What is the maximum safe operating temperature for continuous operation?

The BUZ31L E3044A supports continuous operation up to +150 °C junction temperature (Tj). Derating begins above TC = 28 °C per datasheet curves; at TC = 100 °C, continuous ID drops to ~6.5 A to maintain Tj ≤ 150 °C with RthJC ≤ 1.32 K/W.

Does the body diode support synchronous rectification?

No-the integrated body diode has 1.2–1.6 V forward voltage (VSD) and 180 ns reverse recovery time (trr), making it unsuitable for high-frequency synchronous rectification. It is intended for freewheeling and clamping, not active rectification; external Schottky diodes or dedicated SR controllers are recommended for that function.

Can BUZ31L E3044A be used in parallel configurations?

Yes-its positive temperature coefficient for RDS(on) (increasing with Tj) enables inherent current sharing when paralleled. However, matched gate drive layout, identical PCB trace lengths, and individual gate resistors are mandatory to ensure balanced dynamic current distribution and avoid oscillation or thermal runaway.

BUZ31L E3044A Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
95W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

BUZ31L E3044A FAQ

1.How can I place an order for BUZ31L E3044A through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ31L E3044A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ31L E3044A reliable?

The price and inventory of BUZ31L E3044A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ31L E3044A is usually 5 days.

3.What payment methods are accepted for BUZ31L E3044A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ31L E3044A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ31L E3044A?

BUZ31L E3044A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ31L E3044A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ31L E3044A?

For technical support, including BUZ31L E3044A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ31L E3044A requirements.

6.How does Aetrix verify that BUZ31L E3044A is sourced from the original manufacturer or authorized distributors?

All BUZ31L E3044A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ31L E3044A meets industry standards.

7.What is the process for return or replacement of BUZ31L E3044A?

All BUZ31L E3044A units undergo pre-shipment inspection (PSI). If there is an issue with BUZ31L E3044A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ31L E3044A part is unused and in its original packaging.

Return procedure for BUZ31L E3044A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BUZ31L E3044A Tags

  • BUZ31L E3044A
  • BUZ31L E3044A PDF
  • BUZ31L E3044A Datasheet
  • BUZ31L E3044A Specifications
  • BUZ31L E3044A Images
  • Infineon Technologies
  • Infineon Technologies BUZ31L E3044A
  • Buy BUZ31L E3044A
  • BUZ31L E3044A Price
  • BUZ31L E3044A Distributor
  • BUZ31L E3044A Supplier
  • BUZ31L E3044A Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER