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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ32

Name: BUZ32
Brand: Infineon Technologies
SKU: BUZ32
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ32

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ32.pdf

Description:: MOSFET N-CH 200V 9.5A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,106

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Product details

Overview

BUZ32 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 9.5 A continuous drain current, and 0.4 Ω maximum R_DS(on) at V_GS = 10 V. It features avalanche energy rating (E_AS = 120 mJ), integrated body diode with 1.4–1.7 V forward voltage, and TO-220-3 package for industrial switching applications including DC motor control and SMPS primary-side switching.

For engineers reviewing the BUZ32 datasheet, BUZ32 pinout, BUZ32 application, or BUZ32 equivalent, key selection criteria include its 200 V V_DS, 9.5 A I_D, 0.4 Ω R_DS(on), avalanche ruggedness, and thermal resistance of ≤1.67 K/W - all critical for reliable high-current, medium-voltage switching in constrained thermal environments.

Technical Context

The BUZ32 employs a planar SIPMOS structure optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.1–4.0 V) ensures stable turn-on with standard 10 V gate drive, while transconductance (g_fs = 3–4.6 S) supports fast, controlled switching transitions.

Dynamic parameters - including C_iss = 400–530 pF, C_oss = 85–130 pF, and t_r/t_f = 40–60 ns / 30–40 ns - reflect trade-offs between switching speed and EMI generation in hard-switched topologies. The integrated body diode exhibits t_rr = 200 ns and Q_rr = 0.6 µC, suitable for non-synchronous rectification where reverse recovery behavior must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands up to 200 V drain-source blocking voltage before breakdown, enabling use in 100–120 VAC line-fed or 48–96 VDC bus systems.
I_D (continuous)	9.5 A at T_C = 25 °C - Supports sustained load currents up to 9.5 A with heatsink; derates to ~5 A at T_C = 100 °C per curve on Page 5.
R_DS(on)	0.4 Ω max at V_GS = 10 V, I_D = 6 A - Limits conduction loss to ≤3.6 W at 9.5 A, critical for thermal management in compact enclosures.
E_AS	120 mJ (single-pulse, I_D = 9.5 A, V_DD = 50 V) - Enables reliable operation under inductive switching stress without external snubbers in flyback or buck converters.
t_r/t_f	40–60 ns / 30–40 ns - Fast switching edges reduce transition losses but require careful PCB layout to limit voltage overshoot and EMI.
V_GS(th)	2.1–4.0 V - Ensures clean turn-on with TTL/CMOS-compatible gate drivers; avoids partial enhancement in noisy environments.
Q_G	28 nC typ - Determines gate drive power requirement; ~280 µC total charge needed for full 10 V swing at 10 kHz switching.

Pinout & Package

BUZ32 is housed in a Pb-free PG-TO-220-3 package with standard through-hole mounting, copper tab for heatsinking, and isolated drain connection. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (±20 V absolute max).
Pin 2	Drain	Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3	Source	Reference node for gate drive; common return for load current; ties to ground or low-side switch source in half-bridge configurations.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse E_AS = 120 mJ enables robustness against inductive kickback without external clamping.
Low R_DS(on)	0.4 Ω max reduces I²R conduction loss, easing thermal design in space-constrained 5–10 W output SMPS or motor drivers.
Integrated body diode	Rated for 9.5 A continuous forward current and 1.4–1.7 V V_SD, supporting freewheeling in non-synchronous topologies.
Thermal resistance	R_thJC ≤ 1.67 K/W allows >40 W dissipation with modest heatsinking - sufficient for intermittent 75 W P_tot bursts.

Applications

DC Motor Control

Switch-Mode Power Supply

Use Scenario: Driving brushed DC motors in industrial actuators or HVAC blowers with PWM speeds up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional current up to 9.5 A peak.

Use Value: Avalanche rating absorbs back-EMF spikes during abrupt PWM turn-off, eliminating need for external flyback diodes in many designs.

Use Scenario: Primary-side switch in offline flyback converters delivering up to 60 W from universal AC input.

IC Role / Device Role / Timing Role: Main switching transistor operating at 65–100 kHz with 50 V clamp voltage during UIS events.

Use Value: 120 mJ E_AS withstands worst-case transformer leakage inductance energy without failure, improving long-term reliability.

LED Driver

Industrial Solenoid Control

Use Scenario: Constant-current switching regulator for high-brightness LED strings in signage or street lighting.

IC Role / Device Role / Timing Role: Low-loss series pass element modulating current at 1–10 kHz with minimal thermal rise.

Use Value: 0.4 Ω R_DS(on) limits conduction loss to <3.6 W at 9.5 A, enabling compact heatsinkless designs up to 30 W output.

Use Scenario: Driving 24 VDC solenoids in factory automation valves with 100 ms on-time pulses.

IC Role / Device Role / Timing Role: Robust switching device handling pulsed 38 A surge currents (I_Dpuls) without latch-up.

Use Value: Rated I_Dpuls = 38 A and t_rr = 200 ns ensure clean turn-off and prevent contact welding in inductive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V V_DS, 20 A I_D, 0.12 Ω R_DS(on), TO-220 package - lower R_DS(on) but no published E_AS rating.	Better conduction efficiency at high current; unsuitable where unclamped inductive switching is routine.	Select when thermal headroom exists and avalanche stress is absent; verify gate drive compatibility (V_GS(th) = 2–4 V).
IRF640N	200 V V_DS, 18 A I_D, 0.18 Ω R_DS(on), TO-220 - higher current rating but only 50 mJ E_AS (per IR datasheet Rev. D).	Higher continuous current capability; significantly lower avalanche energy margin than BUZ32's 120 mJ.	Prefer for high-duty-cycle linear or synchronous rectifier roles; avoid in flyback primary or motor brake circuits requiring high UIS robustness.

Compared with STP20NM20 and IRF640N, BUZ32 trades off lower current and higher R_DS(on) for superior avalanche ruggedness - making it the preferred choice where inductive energy absorption, not just conduction loss, defines system reliability.

Availability

BUZ32 is available at Aetrix Electronics and suitable for DC motor control, switch-mode power supply design, LED driver development, and industrial solenoid control requiring stable component supply across extended production lifecycles.

Supply support for BUZ32 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BUZ32 belongs to Infineon's SIPMOS® power MOSFET product line, engineered for rugged, medium-voltage switching in industrial and consumer power conversion where avalanche capability and thermal stability are essential.

FAQ

What is the maximum safe gate-source voltage for BUZ32?

The absolute maximum gate-source voltage is ±20 V. Operation above +10 V or below −10 V risks permanent gate oxide damage. Recommended drive is +10 V for full enhancement and −5 V to −10 V for fast, reliable turn-off - especially in high-dv/dt environments where Miller-induced false turn-on may occur.

Can BUZ32 replace BUZ11 in existing designs?

BUZ32 is not a direct replacement for BUZ11: BUZ11 has 50 V V_DS and 15 A I_D, while BUZ32 offers 200 V V_DS and 9.5 A I_D. Substituting BUZ32 into a 50 V circuit introduces unnecessary cost and capacitance overhead; conversely, using BUZ11 in a 200 V application risks catastrophic breakdown. Verify voltage stress margins before substitution.

Is BUZ32 suitable for synchronous rectification?

No - BUZ32 is not optimized for synchronous rectification. Its body diode has t_rr = 200 ns and Q_rr = 0.6 µC, which cause significant switching loss and voltage spikes when used as a freewheeling diode in high-frequency converters. Dedicated low-Q_rr, logic-level MOSFETs (e.g., BSC010N04LS) are required for efficient synchronous rectification.

Does BUZ32 require a heatsink in continuous 9.5 A operation?

Yes - at 9.5 A and 0.4 Ω R_DS(on), conduction loss is ~3.6 W. With R_thJC ≤ 1.67 K/W and ambient >40 °C, junction temperature exceeds 150 °C without heatsinking. A minimum 20 cm² aluminum heatsink (R_thHA ≈ 15 K/W) is required to maintain T_j < 125 °C under continuous load.

BUZ32 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ32 FAQ

1.How can I place an order for BUZ32 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ32 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ32 reliable?

The price and inventory of BUZ32 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ32 is usually 5 days.

3.What payment methods are accepted for BUZ32?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ32 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ32?

BUZ32 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ32 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ32?

For technical support, including BUZ32 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ32 requirements.

6.How does Aetrix verify that BUZ32 is sourced from the original manufacturer or authorized distributors?

All BUZ32 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ32 meets industry standards.

7.What is the process for return or replacement of BUZ32?

All BUZ32 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ32, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ32 part is unused and in its original packaging.

Return procedure for BUZ32:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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