My Inquiry
My Account
Infineon Technologies BUZ323
- Part No.:
- BUZ323
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BUZ323.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BUZ323 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® power MOSFET rated for 400 V drain-source voltage, 15 A continuous drain current at TC = 25 °C, and 0.3 Ω maximum RDS(on) at VGS = 10 V and ID = 9.5 A. It features avalanche energy rating (EAS = 790 mJ), integrated body diode with 1.1–1.5 V forward voltage, and TO-218 AA package for high-power industrial switching applications.
For engineers reviewing the BUZ323 datasheet, BUZ323 pinout, BUZ323 application, or BUZ323 equivalent, key selection criteria include its 400 V blocking capability, 170 W power dissipation at TC = 25 °C, avalanche ruggedness, thermal resistance (RthJC ≤ 0.74 K/W), and gate charge profile supporting fast switching in hard-switched topologies.
Technical Context
This discrete power transistor operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports gate drive voltages up to ±20 V. Its transconductance (gfs = 8–14.5 S) and low output capacitance (Coss = 320–480 pF) enable efficient high-frequency switching in DC-DC converters and motor drives.
The device integrates a robust intrinsic body diode with reverse recovery time trr = 145 ns and Qrr = 7.8 µC, enabling reliable freewheeling in inductive loads. Its safe operating area (SOA) is defined for pulse widths down to 10 µs and includes DC, 10 ms, 1 ms, and 100 µs limits at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - Maximum drain-source blocking voltage for off-state reliability in 380 VAC rectified bus applications. |
| ID (continuous) | 15 A at TC = 25 °C - Continuous conduction capability with heatsink mounting; derates to ~8 A at TC = 100 °C. |
| RDS(on) max | 0.3 Ω at VGS = 10 V, ID = 9.5 A - On-resistance determines conduction loss; yields < 4.5 W loss at 15 A. |
| EAS | 790 mJ - Single-pulse avalanche energy rating enables robustness against inductive switching transients without external snubbers. |
| Qg | 140 nC typ - Total gate charge impacts driver sizing and switching loss; compatible with standard 1–2 A peak gate drivers. |
| RthJC | ≤ 0.74 K/W - Junction-to-case thermal resistance defines minimum heatsink requirement for thermal management. |
| trr / Qrr | 145 ns / 7.8 µC - Body diode reverse recovery parameters critical for synchronous rectification and ZVS design margins. |
Pinout & Package
BUZ323 is housed in a TO-218 AA package - a through-hole, isolated-tab power package with 3 leads, designed for high-current PCB mounting and direct heatsink attachment via the metal tab (Drain-connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; requires ≥ 10 V for full enhancement; sensitive to ESD (±20 V absolute max). |
| Pin 2 | Drain (D) | Main high-side current path; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential. |
| Pin 3 | Source (S) | Reference node for gate drive; carries full load current; used as return path for gate driver loop. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed single-pulse EAS = 790 mJ supports unclamped inductive switching without failure. |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.3× from 25 °C to 150 °C, improving current sharing in parallel configurations. |
| High dV/dt immunity | Rated for > 50 V/ns - reduces risk of false turn-on in high-noise bridge-leg environments. |
| Integrated body diode | Optimized for fast recovery (trr = 145 ns) and low forward drop (VSD = 1.1–1.5 V), eliminating need for external freewheeling diode in many flyback designs. |
Applications
| Motor Drive Inverter Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge switching in 3-phase BLDC motor controllers operating from 300–400 VDC bus. IC Role / Device Role / Timing Role: High-side and low-side power switch handling 15 A peak phase current with 10–20 kHz PWM. Use Value: Avalanche rating absorbs back-EMF spikes during commutation; low RDS(on) minimizes conduction loss at full load. | Use Scenario: Primary-side switch in isolated 1 kW telecom DC-DC converter with 48 V input and 12 V output. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or push-pull topology operating at 100–200 kHz. Use Value: Low Ciss (2300–3000 pF) and Qg (140 nC) reduce driver loss; SOA supports 10 µs pulse stress during startup. |
| UPS Output Stage | Induction Heating Half-Bridge |
Use Scenario: Output inverter stage in line-interactive UPS delivering 230 VAC from 360–400 VDC bus. IC Role / Device Role / Timing Role: Full-bridge switching element conducting 15 A RMS with 50/60 Hz fundamental and harmonic content. Use Value: High Tj max (150 °C) and stable RDS(on) support sustained overload conditions; TO-218 mechanical robustness ensures long-term reliability. | Use Scenario: Resonant half-bridge in 20–50 kHz induction heating system driving 10–20 kW loads. IC Role / Device Role / Timing Role: Fast-switching power switch managing high di/dt (> 1 kA/µs) and repetitive avalanche stress. Use Value: Confirmed EAS rating and low Crss (120–180 pF) minimize capacitive feedthrough and improve ZVS margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF40 | 400 V, 16 A, RDS(on) = 0.3 Ω, TO-220 package, no specified EAS rating | Lacks guaranteed avalanche energy spec; lower thermal mass limits pulsed current handling | Acceptable where avalanche stress is mitigated externally; not recommended for unclamped inductive switching. |
| IRFP460 | 500 V, 20 A, RDS(on) = 0.27 Ω, TO-247 package, EAS = 620 mJ | Higher voltage rating but lower avalanche energy than BUZ323; larger footprint and higher Ciss | Better for 400+ V systems needing margin; less optimal for compact 400 V designs due to higher gate charge and layout area. |
Compared with STP16NF40 and IRFP460, BUZ323 offers superior avalanche ruggedness (790 mJ vs. unspecified/620 mJ), tighter RDS(on) distribution, and optimized thermal resistance in TO-218 - making it preferred for high-reliability industrial inverters where transient overvoltage is uncontrolled.
Availability
BUZ323 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, UPS output stages, and induction heating half-bridges requiring stable component supply and long-lifecycle support.
Supply support for BUZ323 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.
The BUZ323 belongs to Infineon's SIPMOS® family - engineered for high-voltage, high-current switching with enhanced avalanche capability and thermal stability in demanding industrial power conversion.
FAQ
Is BUZ323 suitable for paralleling multiple devices?
Yes - BUZ323 exhibits a positive temperature coefficient for RDS(on), meaning on-resistance increases with junction temperature. This promotes natural current sharing when multiple units are paralleled, provided layout symmetry and gate drive matching are maintained. Derating by 15% per additional device is recommended for thermal margin.
What is the maximum gate resistor value for reliable switching at 100 kHz?
With Qg = 140 nC and typical gate driver peak current of 2 A, a 10 Ω gate resistor yields ~0.7 µs rise/fall time - sufficient for 100 kHz operation with 50% duty cycle. For faster switching, use ≤ 5 Ω with adequate driver capability; values > 22 Ω increase switching losses significantly above 50 kHz.
Does BUZ323 require a negative gate voltage for turn-off?
No - BUZ323 is enhancement-mode and fully turns off with 0 V gate-source bias. However, applying –5 V improves noise immunity in high-dV/dt environments. The absolute maximum negative VGS is –20 V; sustained negative bias is unnecessary for standard operation and adds driver complexity.
Can BUZ323 replace BUZ322 in existing designs?
Yes - BUZ322 (400 V, 12 A, 0.4 Ω) shares identical pinout, package, and gate characteristics. BUZ323 offers higher current rating (+25%), lower RDS(on) (–25%), and improved avalanche energy (790 mJ vs. 500 mJ), enabling direct upgrade without layout changes while improving efficiency and ruggedness.
BUZ323 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BUZ323 FAQ
1.How can I place an order for BUZ323 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ323 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ323 reliable?
The price and inventory of BUZ323 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ323 is usually 5 days.
3.What payment methods are accepted for BUZ323?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ323 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ323?
BUZ323 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ323 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ323?
For technical support, including BUZ323 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ323 requirements.
6.How does Aetrix verify that BUZ323 is sourced from the original manufacturer or authorized distributors?
All BUZ323 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ323 meets industry standards.
7.What is the process for return or replacement of BUZ323?
All BUZ323 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ323, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ323 part is unused and in its original packaging.
Return procedure for BUZ323:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BUZ323 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
