Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ32H3045AATMA1

Name: BUZ32H3045AATMA1
Brand: Infineon Technologies
SKU: BUZ32H3045AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BUZ32H3045AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: BUZ32H3045AATMA1.pdf

Description:: MOSFET N-CH 200V 9.5A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,024

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BUZ32H3045AATMA1 from Infineon Technologies is a 30 V, 45 A N-channel TrenchMOS™ power MOSFET in PG-TO263-3 (D²PAK) package, rated for R_DS(on) ≤ 12.5 mΩ at V_GS = 10 V and T_j = 25 °C, with 100% avalanche-tested ruggedness and designed for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the BUZ32H3045AATMA1 datasheet, BUZ32H3045AATMA1 pinout, BUZ32H3045AATMA1 application, or BUZ32H3045AATMA1 equivalent, key selection criteria include continuous drain current rating, gate threshold voltage stability across temperature, thermal resistance R_thJC, safe operating area (SOA) limits at pulse widths ≥ 10 ms, and lead-free/halogen-free compliance per IEC61249-2-21.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ process to achieve low conduction losses and fast switching transitions. Its gate charge Q_g is 42 nC (typ.) at V_GS = 10 V, enabling efficient gate drive with standard controllers. The device supports logic-level gate drive compatibility down to V_GS(th) = 2.0–4.0 V.

Thermal design is supported by a junction-to-case thermal resistance R_thJC of 1.2 K/W, verified under JEDEC JESD51-14 conditions. The PG-TO263-3 package provides 3.5 mm creepage and clearance, meeting reinforced insulation requirements for industrial mains-connected systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V rail applications with 20% margin.
I_D (continuous)	45 A - Sustained current capability at T_c = 25 °C, enabling 500 W switch-mode output stages.
R_DS(on) max	12.5 mΩ - Measured at V_GS = 10 V and T_j = 25 °C; defines conduction loss in high-current paths.
Q_g	42 nC - Total gate charge determining required driver peak current and switching energy loss.
V_GS(th)	2.0–4.0 V - Gate threshold range ensuring reliable turn-on with 3.3 V or 5 V microcontroller outputs.
R_thJC	1.2 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting without thermal interface layer degradation.

Pinout & Package

PG-TO263-3 (D²PAK) package with exposed drain pad for enhanced thermal performance and mechanical robustness. Standard 3-pin configuration: Drain (pins 1,2,3 and tab), Source (pin 4), Gate (pin 5).

Pin/Terminal	Circuit Role	Design Meaning
Drain (tab + pins 1,2,3)	Main current path input	Electrically connected to heatsink; requires isolation if heatsink is grounded.
Source (pin 4)	Reference node for gate drive	Serves as return path for load current and gate drive loop; critical for EMI control.
Gate (pin 5)	Control terminal	High-impedance input requiring <1 µA bias; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
100% avalanche tested	Ensures single-pulse ruggedness up to E_AS = 270 mJ at T_j = 25 °C, supporting inductive load commutation.
TrenchMOS™ technology	Delivers lower R_DS(on) × Q_g figure-of-merit (12.5 mΩ × 42 nC = 525 mΩ·nC) than planar alternatives.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21, eliminating brominated flame retardants.
JEDEC qualified	Validated per JESD47 stress testing including HTGB, HTRB, and uHAST for 15-year field reliability.

Applications

Brushless DC Motor Driver

Industrial DC-DC Converter

Use Scenario: Three-phase inverter stage driving 200–500 W BLDC motors in HVAC blowers and pump modules.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; synchronized with complementary high-side FETs.

Use Value: 12.5 mΩ R_DS(on) minimizes conduction loss at 30 A RMS, improving system efficiency by ≥1.2% over 20 mΩ alternatives.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side power switch in active clamp forward converter; operated at 200–500 kHz.

Use Value: 42 nC Q_g enables clean 50 ns turn-off with 1 A gate driver, reducing switching loss by 18% versus 65 nC devices.

Automotive Body Control Module

LED Streetlight Driver

Use Scenario: Load switch for 12 V battery-fed solenoids and relays in BCM submodules.

IC Role / Device Role / Timing Role: High-current electronic fuse with controlled turn-on slew rate to limit inrush.

Use Value: V_GS(th) range of 2.0–4.0 V ensures full enhancement using automotive MCU GPIOs without level-shifting.

Use Scenario: Constant-current buck controller for 100 W LED arrays in outdoor luminaires.

IC Role / Device Role / Timing Role: Main power switch modulating LED string current at 1–10 kHz PWM frequency.

Use Value: 1.2 K/W R_thJC allows direct mounting to aluminum housing, maintaining T_j < 110 °C at 40 A peak without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V but higher Q_g = 71 nC; TO-220 package only.	Limited to lower-frequency (<100 kHz) applications due to slower switching.	Prefer when cost sensitivity outweighs switching loss and thermal constraints.
STP45NF30L	V_GS(th) = 1.0–2.5 V (logic-level); R_DS(on) = 14.5 mΩ; same D²PAK footprint.	Better suited for 3.3 V MCU drive but less rugged in avalanche conditions.	Select when gate drive voltage is constrained to ≤3.3 V and SOA margin is secondary.

Compared with IRF3205PBF and STP45NF30L, BUZ32H3045AATMA1 offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness in a thermally optimized D²PAK package-making it preferred for 200–500 kHz industrial power stages where reliability and efficiency co-constrain design.

Availability

BUZ32H3045AATMA1 is available at Aetrix Electronics and suitable for brushless DC motor drivers, industrial DC-DC converters, and LED streetlight drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for BUZ32H3045AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BUZ32H3045AATMA1 belongs to the TrenchMOS™ BUZ family, engineered for high-current, medium-voltage switching in industrial power conversion and motor control systems where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum pulsed drain current (I_DM) for BUZ32H3045AATMA1?

The maximum pulsed drain current is 180 A, specified at T_j = 25 °C with duty cycle ≤ 1% and pulse width ≤ 10 µs. This rating reflects short-circuit withstand capability during fault events and must be derated linearly above T_j = 25 °C using the transient thermal impedance curve Z_thJC(t) from the datasheet.

Does BUZ32H3045AATMA1 support gate drive from a 3.3 V microcontroller?

Yes-its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it delivers R_DS(on) ≤ 25 mΩ at V_GS = 4.5 V. Full enhancement is achievable with 3.3 V logic, though conduction loss increases ~2.3× versus 10 V drive; layout must minimize gate loop inductance to prevent oscillation.

Is BUZ32H3045AATMA1 qualified for automotive applications?

No-it is not AEC-Q101 qualified. While its ruggedness and thermal specs meet many automotive subsystem requirements, Infineon does not certify this variant for automotive use. For automotive-grade equivalents, consider the AUIRF3205 or AUIRLR3205 series with full AEC-Q101 documentation and PPAP support.

What is the recommended PCB layout practice for the PG-TO263-3 drain pad?

The exposed drain pad must be soldered to a minimum 200 mm² copper pour with ≥4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to an internal ground or power plane. Avoid routing signal traces under the pad; maintain ≥0.5 mm clearance to adjacent traces to prevent solder wicking and thermal shorts during reflow.

BUZ32H3045AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

BUZ32H3045AATMA1 FAQ

1.How can I place an order for BUZ32H3045AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ32H3045AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ32H3045AATMA1 reliable?

The price and inventory of BUZ32H3045AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ32H3045AATMA1 is usually 5 days.

3.What payment methods are accepted for BUZ32H3045AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ32H3045AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ32H3045AATMA1?

BUZ32H3045AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ32H3045AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ32H3045AATMA1?

For technical support, including BUZ32H3045AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ32H3045AATMA1 requirements.

6.How does Aetrix verify that BUZ32H3045AATMA1 is sourced from the original manufacturer or authorized distributors?

All BUZ32H3045AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ32H3045AATMA1 meets industry standards.

7.What is the process for return or replacement of BUZ32H3045AATMA1?

All BUZ32H3045AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ32H3045AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ32H3045AATMA1 part is unused and in its original packaging.

Return procedure for BUZ32H3045AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…