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Infineon Technologies BUZ32HXKSA1
- Part No.:
- BUZ32HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ32HXKSA1.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:7,393
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Product details
Overview
BUZ32HXKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V VDS, 9.5 A continuous drain current, and 0.4 Ω RDS(on) at VGS = 10 V. It features avalanche-rated ruggedness (EAS = 120 mJ), integrated body diode with 1.4–1.7 V forward voltage, and TO-220-3 package for industrial motor drives and DC-DC converters.
For engineers reviewing the BUZ32HXKSA1 datasheet, BUZ32HXKSA1 pinout, BUZ32HXKSA1 application, or BUZ32HXKSA1 equivalent, key selection criteria include its 200 V blocking capability, 9.5 A thermal-current rating at TC = 25 °C, 120 mJ single-pulse avalanche energy, and suitability for hard-switched flyback and half-bridge topologies requiring robust unclamped inductive switching performance.
Technical Context
This device operates as a voltage-controlled unidirectional power switch with gate threshold voltage of 2.1–4.0 V and transconductance of 3–4.6 S. Its dynamic parameters include Ciss = 400–530 pF, Coss = 85–130 pF, and fast switching times: td(on) ≤ 15 ns, tr ≤ 60 ns, td(off) ≤ 75 ns, tf ≤ 40 ns under standard test conditions.
The integrated body diode supports bidirectional current flow during freewheeling, with reverse recovery time trr ≤ 200 ns and Qrr ≤ 0.6 µC at 100 V and 100 A/µs di/dt. Thermal resistance RthJC ≤ 1.67 K/W enables high-power operation with heatsink mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - maximum drain-source blocking voltage for DC bus applications up to 170 V RMS input |
| ID (continuous) | 9.5 A at TC = 25 °C - usable current limit with adequate heatsinking in convection-cooled designs |
| RDS(on) | 0.4 Ω max at VGS = 10 V - determines conduction loss of ~3.6 W at 9.5 A, critical for thermal design |
| EAS | 120 mJ - single-pulse avalanche energy rating enabling reliable operation in inductive load switching |
| tr/tf | ≤ 60 ns / ≤ 40 ns - fast switching transitions reduce switching losses in 50–200 kHz SMPS designs |
| VGS(th) | 2.1–4.0 V - gate threshold range ensures reliable turn-on with standard 5 V or 10 V logic-level drivers |
| Ciss | 400–530 pF - input capacitance affecting gate drive power and Miller effect in high-frequency operation |
Pinout & Package
Package: PG-TO-220-3 (standard through-hole, isolated tab, Pb-free, halogen-free).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; requires ≥10 V for full enhancement; sensitive to ESD; connects to driver IC output |
| Pin 2 | Drain (D) | High-side power terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential |
| Pin 3 | Source (S) | Return path for load current; common reference for gate drive; ties to ground or low-side switch source |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed 120 mJ single-pulse EAS enables reliable unclamped inductive switching without external snubbers |
| Low RDS(on) | 0.4 Ω max reduces conduction loss and junction temperature rise in continuous 9.5 A loads |
| Integrated body diode | 1.4–1.7 V VSD at 19 A supports efficient freewheeling in buck, flyback, and half-bridge configurations |
| Thermal robustness | RthJC ≤ 1.67 K/W allows 75 W dissipation at TC = 25 °C-critical for compact heatsink designs |
| Halogen-free & Pb-free | Complies with IEC61249-2-21 and RoHS; suitable for automotive and industrial environmental compliance programs |
Applications
| Motor Drive Inverter Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: High-side or low-side power switch handling 9.5 A peak phase current with 200 V bus margin. Use Value: Avalanche rating eliminates need for external clamping diodes during commutation transients. | Use Scenario: Primary-side switch in isolated 48 V to 12 V flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Main switching transistor operating at 100 kHz with 50% duty cycle and 3 A average current. Use Value: Low Ciss and fast tr/tf minimize switching loss while maintaining >88% efficiency. |
| AC-DC Auxiliary Supply | LED Driver Power Stage |
Use Scenario: Self-supply auxiliary SMPS in 3-phase industrial VFDs powering gate drivers and control logic. IC Role / Device Role / Timing Role: 200 V-rated switch stepping down rectified 3-phase line voltage (≈310 V DC) to 15 V. Use Value: 200 V VDS provides 30% overvoltage margin against line surges and ringing. | Use Scenario: Constant-current buck controller for high-brightness LED arrays in street lighting fixtures. IC Role / Device Role / Timing Role: PWM-controlled power switch regulating 700 mA–2 A LED string current at 200 kHz. Use Value: Tight RDS(on) tolerance (0.3–0.4 Ω) ensures stable current regulation across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDS, 20 A ID, 0.12 Ω RDS(on), TO-220FP package (shorter leads, lower profile) | Higher current rating but lower avalanche energy (EAS = 50 mJ vs. 120 mJ) | Prefer when higher continuous current and smaller footprint are needed, but system lacks strong inductive stress |
| IRF640NPbF | 200 V VDS, 18 A ID, 0.18 Ω RDS(on), TO-220AB package, non-avalanche rated | No specified EAS; higher gate charge (QG = 67 nC vs. ~25 nC) | Select only in low-dV/dt, non-inductive switching where avalanche immunity is not required |
Compared with STP20NM20 and IRF640NPbF, BUZ32HXKSA1 offers superior avalanche ruggedness and lower gate charge for high-reliability inductive switching, though with higher RDS(on) than both alternatives-making it optimal for thermally constrained but electrically stressful environments.
Availability
BUZ32HXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC auxiliary supplies, LED driver power stages, and DC-DC converter primary switches requiring stable component supply and long-term manufacturability.
Supply support for BUZ32HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
BUZ32HXKSA1 belongs to the SIPMOS® family of high-voltage power MOSFETs designed specifically for rugged, high-efficiency switching in industrial power conversion and motor control systems.
FAQ
Is BUZ32HXKSA1 suitable for use without a heatsink?
No. With a maximum power dissipation of 75 W at TC = 25 °C and RthJC ≤ 1.67 K/W, the device requires a properly sized heatsink to maintain junction temperature below 150 °C under continuous 9.5 A operation. At ambient temperatures above 40 °C or without forced airflow, thermal derating is mandatory per the ID vs. TC curve on page 5 of the datasheet.
What is the recommended gate resistor value for hard-switching applications?
A gate resistor of 10–25 Ω is recommended to balance switching speed and gate oscillation suppression. Lower values (e.g., 10 Ω) reduce td(on)/td(off) but increase EMI risk; higher values (e.g., 25 Ω) improve stability in high-di/dt layouts but raise switching losses. The 25 Ω RGS used in EAS testing confirms this range's suitability for avalanche-rated operation.
Does BUZ32HXKSA1 have a specified SOA curve for linear-mode operation?
Yes. Page 5 includes a Safe Operating Area (SOA) plot for DC, 10 ms, 1 ms, 100 µs, and 10 µs pulse widths at TC = 25 °C. The DC SOA limits VDS × ID to ≤ 75 W, confirming linear-mode use is restricted to low-duty-cycle or short-duration biasing-not sustained analog amplification.
Can BUZ32HXKSA1 replace BUZ32H in existing designs?
Yes-BUZ32HXKSA1 is the halogen-free, Pb-free qualified version of BUZ32H (Rev. 2.4 datasheet confirms identical electrical specs, package, and pinout). No layout or drive circuit changes are required; it satisfies RoHS and IEC61249-2-21 compliance mandates for new production without performance trade-offs.
BUZ32HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
BUZ32HXKSA1 FAQ
1.How can I place an order for BUZ32HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ32HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ32HXKSA1 reliable?
The price and inventory of BUZ32HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ32HXKSA1 is usually 5 days.
3.What payment methods are accepted for BUZ32HXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ32HXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ32HXKSA1?
BUZ32HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ32HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ32HXKSA1?
For technical support, including BUZ32HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ32HXKSA1 requirements.
6.How does Aetrix verify that BUZ32HXKSA1 is sourced from the original manufacturer or authorized distributors?
All BUZ32HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ32HXKSA1 meets industry standards.
7.What is the process for return or replacement of BUZ32HXKSA1?
All BUZ32HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ32HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ32HXKSA1 part is unused and in its original packaging.
Return procedure for BUZ32HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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