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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ73

Name: BUZ73
Brand: Infineon Technologies
SKU: BUZ73
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ73

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ73.pdf

Description:: MOSFET N-CH 200V 7A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,481

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Product details

Overview

BUZ73 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 7 A continuous drain current at TC = 28 °C, and 0.4 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A, designed for hard-switched DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the BUZ73 datasheet, BUZ73 pinout, BUZ73 application, or BUZ73 equivalent, key selection criteria include avalanche energy rating (EAS = 120 mJ), gate charge (QGate typ. 20 nC), reverse diode forward voltage (VSD = 1.3–1.7 V at IF = 14 A), and thermal resistance (RthJC ≤ 3.1 K/W).

Technical Context

This device operates as a unidirectional high-side or low-side switch in DC-DC topologies, featuring a built-in avalanche-rated body diode with trr = 200 ns and Qrr = 0.6 µC. Its transconductance (gfs = 3–4.2 S) and input capacitance (Ciss = 400–530 pF) support stable gate drive design at switching frequencies up to several hundred kHz.

The MOSFET's safe operating area (SOA) is defined for pulse widths down to 100 µs and DC operation, with RDS(on) increasing predictably with junction temperature (0.4 Ω at 25 °C → ~1.4 Ω at 150 °C). It supports gate drive voltages from 2.1 V (VGS(th) min) to ±20 V (VGS max).

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	200 V - Maximum blocking voltage in off-state; suitable for 100–120 VAC rectified bus applications.
ID (cont)	7 A at TC = 28 °C - Continuous conduction capability with heatsink; derates to ~4.5 A at TC = 100 °C.
RDS(on) max	0.4 Ω at VGS = 10 V, ID = 4.5 A - Conduction loss of 20 W at 7 A, requiring thermal management.
EAS	120 mJ - Single-pulse avalanche energy at ID = 7 A, VDD = 50 V; enables robustness against inductive turn-off transients.
QGate	20 nC typ - Gate charge determining driver strength requirement; enables <15 ns turn-on delay with 50 Ω source impedance.
VSD	1.3–1.7 V at IF = 14 A - Forward voltage of integrated body diode; impacts freewheeling losses in synchronous rectification.
trr / Qrr	200 ns / 0.6 µC - Reverse recovery behavior critical for minimizing shoot-through risk in half-bridge configurations.

Pinout & Package

BUZ73 is housed in a TO-220 AB package with isolated tab (pin 2), standard for through-hole mounting and heatsink attachment. Pin 1 is Gate, Pin 2 is Drain (tab-connected), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	High-impedance control input; requires ≥2.1 V to turn on; limited to ±20 V absolute max.
Pin 2 (D)	Drain terminal (tab)	Main high-voltage current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current; forms return path for body diode conduction.

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse EAS = 120 mJ enables reliable inductive switching without external snubbers.
Low gate threshold voltage	VGS(th) = 2.1–4.0 V allows direct drive from 3.3 V or 5 V logic with margin, reducing need for level-shifting.
Integrated body diode	IS = 7 A continuous, VSD = 1.3–1.7 V supports bidirectional current handling in H-bridge and flyback topologies.
Thermal robustness	RthJC ≤ 3.1 K/W ensures efficient heat transfer to heatsink; Tj range –55 to +150 °C supports industrial ambient conditions.
Dynamic switching performance	td(on)/tr = 10–15 ns / 40–60 ns enables clean transitions at >200 kHz with minimal overlap loss.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Driving brushed DC motors in conveyor systems and pumps with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor current direction and duty cycle.

Use Value: Avalanche rating absorbs back-EMF spikes during abrupt current interruption; RDS(on) < 0.4 Ω limits I²R heating at 7 A.

Use Scenario: Primary-side switch in non-isolated buck converters powering PLC I/O modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–500 kHz with fixed 12 V input.

Use Value: Low QGate (20 nC) reduces gate driver power loss; Ciss/Coss ratio supports ZVS-assisted soft switching.

Power Supplies

Lighting Ballasts

Use Scenario: Secondary-side synchronous rectifier in 24 V/10 A telecom power supply.

IC Role / Device Role / Timing Role: Unidirectional current switch replacing Schottky diode to reduce conduction loss.

Use Value: VSD = 1.3–1.7 V at 14 A yields lower forward drop than 40 V Schottky; SOA supports 10 ms overload pulses.

Use Scenario: Half-bridge switch in electronic fluorescent lamp (EFL) ballast operating at 25–65 kHz.

IC Role / Device Role / Timing Role: Fast-turning switch managing resonant tank current reversal.

Use Value: trr = 200 ns and Qrr = 0.6 µC minimize dead-time-induced distortion; avalanche tolerance handles lamp ignition surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK20Z	200 V, 7 A, RDS(on) = 0.36 Ω, EAS = 100 mJ, TO-220FP package (shorter leads)	Limited avalanche margin; lower RthJA due to FP variant; not rated for pulsed ID = 28 A	Prefer where space-constrained PCB layout favors FP package and avalanche stress is minimal.
IRF640N	200 V, 18 A, RDS(on) = 0.18 Ω, EAS = 95 mJ, TO-220AB	Higher current rating but larger die; higher QGate (39 nC); no specified trr/Qrr data	Choose when higher continuous current headroom is needed and gate drive strength permits higher QGate.

Compared with STP7NK20Z and IRF640N, BUZ73 offers superior single-pulse avalanche ruggedness (120 mJ vs. ≤100 mJ) and tighter VGS(th) distribution (2.1–4.0 V), making it preferred for inductive loads with unpredictable turn-off transients.

Availability

BUZ73 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, power supplies, and lighting ballasts requiring stable component supply and long-term lifecycle support.

Supply support for BUZ73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BUZ73 belongs to Infineon's SIPMOS® family of trench-gate MOSFETs, engineered for high avalanche reliability and low gate charge in medium-voltage industrial switching applications.

FAQ

Is BUZ73 suitable for use in a half-bridge configuration?

Yes, BUZ73 is commonly used in half-bridge topologies. Its 200 V VDS rating, 120 mJ EAS, and 200 ns trr support operation with 100 VDC bus and moderate switching frequencies. Ensure gate drive isolation, adequate dead time (>500 ns), and snubber design to manage voltage overshoot during cross-conduction transitions.

What is the maximum allowable gate-source voltage for BUZ73?

The absolute maximum gate-source voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage; below –20 V may cause threshold shift or leakage. For reliable switching, maintain VGS between 10 V (for low RDS(on)) and 15 V (to avoid overstress), with transient spikes clamped by Zener protection.

Does BUZ73 have a fully rated body diode for continuous conduction?

Yes - the integrated body diode is rated for IS = 7 A continuous at TC = 25 °C and ISM = 28 A pulsed. Its VSD = 1.3–1.7 V at IF = 14 A and trr = 200 ns make it usable for freewheeling in inductive loads, though dedicated Schottky diodes remain preferable for ultra-low-loss or high-frequency applications.

How does junction temperature affect RDS(on) in BUZ73?

RDS(on) increases linearly with junction temperature: from 0.4 Ω at 25 °C to approximately 1.4 Ω at 150 °C. This 3.5× rise directly impacts conduction loss (P = ID² × RDS(on)), requiring thermal design that maintains Tj < 125 °C under worst-case load to preserve efficiency and reliability.

BUZ73 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ73 FAQ

1.How can I place an order for BUZ73 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73 reliable?

The price and inventory of BUZ73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73 is usually 5 days.

3.What payment methods are accepted for BUZ73?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73?

BUZ73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73?

For technical support, including BUZ73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73 requirements.

6.How does Aetrix verify that BUZ73 is sourced from the original manufacturer or authorized distributors?

All BUZ73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73 meets industry standards.

7.What is the process for return or replacement of BUZ73?

All BUZ73 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73 part is unused and in its original packaging.

Return procedure for BUZ73:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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