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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ73AE3046XK

Name: BUZ73AE3046XK
Brand: Infineon Technologies
SKU: BUZ73AE3046XK
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ73AE3046XK

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ73AE3046XK.pdf

Description:: MOSFET N-CH 200V 5.5A TO220-3

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Product details

Overview

BUZ73AE3046XK from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 200 V V_DS, 5.5 A I_D (continuous), and 45 W P_D at T_c = 25°C. It features R_DS(on) ≤ 0.55 Ω at V_GS = 10 V and is optimized for switched-mode power supplies and DC motor control.

For engineers reviewing the BUZ73AE3046XK datasheet, BUZ73AE3046XK pinout, BUZ73AE3046XK application, or BUZ73AE3046XK equivalent, key selection criteria include its 200 V blocking voltage, low on-resistance under standard gate drive, thermal performance in TO-220 mounting, and suitability for hard-switched 50–100 kHz power stages.

Technical Context

This MOSFET employs planar silicon technology with avalanche-rated ruggedness and specified unclamped inductive switching (UIS) capability. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device exhibits typical input capacitance C_iss = 490 pF and output capacitance C_oss = 85 pF at V_DS = 25 V, supporting predictable switching loss estimation in flyback and buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Maximum drain-source blocking voltage for primary-side switching in offline SMPS up to 170 V AC input.
I_D (cont)	5.5 A - Continuous drain current rating at T_c = 25°C; derates to ~3.5 A at T_c = 100°C.
R_DS(on)	≤ 0.55 Ω @ V_GS = 10 V - Enables <1.7 W conduction loss at 5.5 A, critical for thermal management in compact heatsinks.
P_D	45 W @ T_c = 25°C - Power dissipation limit with direct case-to-heatsink mounting; requires thermal interface design.
E_AS	31 mJ - Rated single-pulse avalanche energy supports robustness against inductive load transients.
C_iss	490 pF @ V_DS = 25 V - Determines gate drive strength requirement; compatible with standard 1 A peak gate drivers.

Pinout & Package

Package: TO-220-3 (straight lead, insulated tab), through-hole mounting with electrically isolated drain tab requiring mechanical fastening to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path	Electrically isolated metal tab connected to drain; must be mounted to heatsink with insulating washer if chassis-ground referenced.
Source	Reference node for gate drive and current return	Low-impedance connection point for source resistor sensing or driver return path; defines local ground reference.
Gate	Control terminal for channel conduction	High-impedance MOS input requiring controlled slew rate to minimize EMI; sensitive to static discharge.

Key Features

Feature	Design Value
Avalanche-rated operation	Specified E_AS = 31 mJ ensures survivability during inductive turn-off without external snubbers.
Low gate charge Q_g	Typical 19 nC enables efficient 100 kHz switching with minimal driver power consumption.
Enhancement-mode logic compatibility	V_GS(th) range (2.0–4.0 V) allows direct drive from microcontroller GPIOs with pull-up/pull-down biasing.
TO-220 thermal interface	Insulated tab design permits safe mounting to grounded heatsinks without isolation components.

Applications

AC-DC Adapter Primary Switch

Industrial DC Motor Driver Stage

Use Scenario: 36 W offline flyback converter for universal AC input (85–264 V AC).

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary winding to secondary via duty-cycle modulation.

Use Value: 200 V rating accommodates reflected output voltage plus leakage spikes; 0.55 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: H-bridge half-bridge leg driving 24 V, 3 A brushed DC motor in factory automation.

IC Role / Device Role / Timing Role: High-side or low-side switching element enabling bidirectional torque control via PWM gating.

Use Value: Avalanche ruggedness prevents failure during motor commutation spikes; TO-220 package simplifies heatsinking in space-constrained enclosures.

LED Driver Constant-Current Stage

UPS Inverter Output Stage

Use Scenario: Buck-based constant-current driver for 12 V, 500 mA high-brightness LED strings.

IC Role / Device Role / Timing Role: Synchronous rectifier or series-pass switch regulating average LED current via high-frequency PWM.

Use Value: Low R_DS(on) minimizes voltage drop across switch, preserving headroom for LED forward voltage and sense resistor.

Use Scenario: 1 kVA line-interactive UPS with 230 V AC output and battery-backed inverter stage.

IC Role / Device Role / Timing Role: Output bridge switch in full-bridge topology converting 48 V DC battery to 230 V AC square-wave output.

Use Value: 200 V V_DS provides margin over 48 V × √2 × 2 = ~136 V peak bus voltage; UIS rating handles transformer saturation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NA20	R_DS(on) = 0.6 Ω (typ), V_DS = 200 V, I_D = 5 A, TO-220FP package (lower P_D = 30 W)	Slightly higher on-resistance and reduced power dissipation limit; less suitable for continuous 5.5 A operation at elevated ambient.	Acceptable for lower-duty-cycle or thermally relaxed designs where 0.05 Ω R_DS(on) margin is acceptable.
IRF640NPBF	R_DS(on) = 0.18 Ω (typ), V_DS = 200 V, I_D = 18 A, TO-220AB package (P_D = 125 W), but higher C_iss = 950 pF	Lower R_DS(on) improves conduction efficiency, but higher gate charge increases driver complexity and switching loss at >50 kHz.	Preferred for high-current, low-frequency (<30 kHz) applications where thermal headroom exists and gate drive capability is sufficient.

Compared with STP5NA20 and IRF640NPBF, BUZ73AE3046XK offers balanced trade-offs: lower R_DS(on) than STP5NA20 for better thermal margin at 5.5 A, and lower C_iss than IRF640NPBF for easier 100 kHz switching-making it optimal for mid-power SMPS and motor drives.

Availability

BUZ73AE3046XK is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor controllers, LED drivers, and UPS inverters requiring stable component supply and long-term manufacturability.

Supply support for BUZ73AE3046XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BUZ73AE3046XK belongs to Infineon's legacy SIPMOS™ power MOSFET family, designed for cost-sensitive, medium-power industrial and consumer switching applications with emphasis on ruggedness and ease of thermal integration.

FAQ

Is BUZ73AE3046XK suitable for gate drive directly from a 3.3 V microcontroller?

No. Its gate threshold voltage V_GS(th) minimum is 2.0 V, but full enhancement requires ≥10 V for guaranteed R_DS(on) ≤ 0.55 Ω. Driving from 3.3 V results in high on-resistance (>5 Ω) and excessive heating. A dedicated gate driver or level-shifter is required for logic-level compatibility.

What is the maximum recommended PCB copper area for thermal relief when using BUZ73AE3046XK in TO-220-3 package?

For natural convection cooling, Infineon recommends ≥10 cm² of 2 oz copper on the drain pad connected to an internal plane, with thermal vias to inner layers. With forced airflow (1 m/s), 5 cm² suffices. The insulated tab must remain electrically isolated from the PCB ground plane unless explicitly grounded via heatsink.

Does BUZ73AE3046XK have built-in ESD protection on the gate terminal?

No. BUZ73AE3046XK lacks integrated gate protection diodes. External 10 kΩ series gate resistor and 12 V Zener clamp between gate and source are recommended to prevent electrostatic damage during handling and PCB assembly.

Can BUZ73AE3046XK replace BUZ73A in existing designs?

Yes, BUZ73AE3046XK is a direct replacement for BUZ73A (same V_DS, I_D, R_DS(on), and package). The "E3046XK" suffix denotes Infineon's tape-and-reel packaging and RoHS-compliant finish; electrical and thermal specifications are identical per datasheet revision 2.1.

BUZ73AE3046XK Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ73AE3046XK FAQ

1.How can I place an order for BUZ73AE3046XK through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73AE3046XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73AE3046XK reliable?

The price and inventory of BUZ73AE3046XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73AE3046XK is usually 5 days.

3.What payment methods are accepted for BUZ73AE3046XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73AE3046XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73AE3046XK?

BUZ73AE3046XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73AE3046XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73AE3046XK?

For technical support, including BUZ73AE3046XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73AE3046XK requirements.

6.How does Aetrix verify that BUZ73AE3046XK is sourced from the original manufacturer or authorized distributors?

All BUZ73AE3046XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73AE3046XK meets industry standards.

7.What is the process for return or replacement of BUZ73AE3046XK?

All BUZ73AE3046XK units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73AE3046XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73AE3046XK part is unused and in its original packaging.

Return procedure for BUZ73AE3046XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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