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Infineon Technologies BUZ73AIN

Part No.:
BUZ73AIN
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUZ73AIN.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:966

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Product details

Overview

BUZ73AIN from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 5.5 A continuous drain current at TC = 37 °C, and 0.6 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A. It features avalanche energy rating (EAS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage, and TO-220-3 package for industrial switching applications including motor control and DC-DC converters.

For engineers reviewing the BUZ73AIN datasheet, BUZ73AIN pinout, BUZ73AIN application, or BUZ73AIN equivalent, key selection considerations include its 200 V blocking capability, 120 mJ single-pulse avalanche energy, thermal resistance RthJC ≤ 3.1 K/W, and halogen-free construction compliant with IEC61249-2-21.

Technical Context

This device operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V (typ. 3 V) and supports fast switching via low input capacitance (Ciss = 400–530 pF) and short turn-on delay (td(on) = 10–15 ns). Its transconductance gfs ranges from 3 to 4.2 S under specified conditions.

The integrated body diode delivers IS = 5.5 A continuous forward current and exhibits trr = 200 ns with Qrr = 0.6 µC under VR = 100 V, IF = IS, diF/dt = 100 A/µs - enabling reliable freewheeling in inductive loads without external diode supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports 170 VAC line-derived DC bus designs with 15% margin
ID (cont.)5.5 A at TC = 37 °C - defines heatsink sizing for sustained conduction
RDS(on) max0.6 Ω at VGS = 10 V, ID = 4.5 A - determines I²R conduction loss in 12–48 V systems
EAS120 mJ - enables robust operation during inductive load switching without snubber
VGS(th)2.1–4.0 V - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers
Ciss400–530 pF - sets gate drive power requirement and influences switching speed
RthJC≤ 3.1 K/W - defines junction-to-case thermal path for mechanical mounting design

Pinout & Package

BUZ73AIN is housed in a Pb-free PG-TO-220-3 package with isolated tab (drain-connected), standardized for through-hole mounting and heatsink attachment.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal requiring <20 V absolute max; drives channel with ~24 nC total gate charge
Pin 2 (D)DrainMain high-side power terminal; electrically connected to metal tab for thermal conduction
Pin 3 (S)SourceReference node for gate drive; forms return path for load current and body diode conduction

Key Features

FeatureDesign Value
Avalanche-rated operation120 mJ single-pulse EAS enables unclamped inductive switching without external protection
Halogen-free constructionComplies with IEC61249-2-21 - meets RoHS and green manufacturing requirements
Low RDS(on) temperature coefficientRDS(on) increases only ~1.9× from −60 °C to +150 °C - improves current sharing in parallel configurations
Integrated body diodeVSD = 1.3–1.7 V at IF = 14 A - eliminates need for discrete freewheeling diode in flyback or H-bridge topologies
Fast switching performancetd(on)/tr/td(off)/tf = 10–15 / 40–60 / 55–75 / 30–40 ns - supports >100 kHz PWM in SMPS designs

Applications

Motor Drive StageDC-DC Converter Switch

Use Scenario: Half-bridge driver for 24–48 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling motor direction and speed via PWM.

Use Value: 200 V rating accommodates back-EMF spikes up to 150 V; 120 mJ EAS prevents failure during sudden motor stall.

Use Scenario: Primary-side switch in non-isolated buck converter delivering 5–12 V at 3–5 A.

IC Role / Device Role / Timing Role: Main power switch modulating input voltage with 100–500 kHz frequency.

Use Value: 0.6 Ω RDS(on) limits conduction loss to <2 W at 5 A; fast switching minimizes transition loss.

Inductive Load DriverPower Supply Protection Switch

Use Scenario: Solenoid driver in HVAC valve control with 100 ms on-time and 500 ms off-time.

IC Role / Device Role / Timing Role: Low-side switch managing inductive load energization and controlled turn-off.

Use Value: Body diode reverse recovery (trr = 200 ns, Qrr = 0.6 µC) reduces voltage overshoot and EMI during demagnetization.

Use Scenario: Hot-swap or inrush current limiter in 24 V industrial power distribution.

IC Role / Device Role / Timing Role: Series pass element activated after soft-start to prevent rail collapse.

Use Value: 5.5 A continuous rating and 22 A pulsed capability handle surge currents; SOA curve supports 100 V × 1 A for 10 ms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP20NM50FP500 V VDS, 20 A ID, 0.27 Ω RDS(on), TO-220FP package (full-pack)Higher voltage/current rating; higher gate charge (60 nC)Preferred where 500 V isolation or higher current headroom is required; requires stronger gate driver
IRF640NPBF200 V VDS, 18 A ID, 0.18 Ω RDS(on), TO-220 package, no avalanche ratingLower RDS(on), no specified EAS rating, higher IDSuitable for non-inductive or snubber-protected circuits where avalanche robustness is not critical

Compared with STP20NM50FP and IRF640NPBF, BUZ73AIN offers verified avalanche ruggedness and optimized thermal resistance (RthJC ≤ 3.1 K/W) for thermally constrained 5–6 A industrial switching, while trading off conduction loss and peak current capability.

Availability

BUZ73AIN is available at Aetrix Electronics and suitable for motor drive stages, DC-DC converter switches, inductive load drivers, and power supply protection switches requiring stable component supply and long-term industrial availability.

Supply support for BUZ73AIN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73AIN belongs to the SIPMOS® family of high-reliability power MOSFETs designed specifically for ruggedized industrial switching applications demanding avalanche tolerance and thermal stability.

FAQ

Is BUZ73AIN suitable for 100 kHz PWM motor control?

Yes. With turn-on delay of 10–15 ns, rise time of 40–60 ns, and fall time of 30–40 ns, BUZ73AIN supports clean switching at 100 kHz in half-bridge configurations. Its 0.6 Ω RDS(on) and 120 mJ EAS ensure low loss and reliability under dynamic load conditions typical in brushed DC motor drives.

Does BUZ73AIN require a gate resistor for safe operation?

Yes. A series gate resistor (typically 10–47 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. This prevents spurious turn-on and reduces EMI, especially when driving inductive loads with fast di/dt transitions.

What is the maximum junction temperature for continuous operation?

The BUZ73AIN has a maximum operating junction temperature of +150 °C. Derating curves on page 5 confirm that ID remains ≥5.5 A up to TC = 37 °C, and power dissipation must be reduced linearly above that point per the Ptot vs. TC plot, maintaining Tj ≤ 150 °C under all conditions.

Can BUZ73AIN replace BUZ73A in existing designs?

Yes - BUZ73AIN is a halogen-free (H) variant of BUZ73A with identical electrical specifications, pinout, and package. The "IN" suffix denotes lead-free and halogen-free compliance per IEC61249-2-21, making it a direct drop-in replacement where RoHS and green material requirements apply.

BUZ73AIN Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
530 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

BUZ73AIN FAQ

1.How can I place an order for BUZ73AIN through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73AIN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73AIN reliable?

The price and inventory of BUZ73AIN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73AIN is usually 5 days.

3.What payment methods are accepted for BUZ73AIN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73AIN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73AIN?

BUZ73AIN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73AIN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73AIN?

For technical support, including BUZ73AIN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73AIN requirements.

6.How does Aetrix verify that BUZ73AIN is sourced from the original manufacturer or authorized distributors?

All BUZ73AIN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73AIN meets industry standards.

7.What is the process for return or replacement of BUZ73AIN?

All BUZ73AIN units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73AIN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73AIN part is unused and in its original packaging.

Return procedure for BUZ73AIN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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