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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BUZ73E3046XK

Name: BUZ73E3046XK
Brand: Infineon Technologies
SKU: BUZ73E3046XK
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BUZ73E3046XK

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: BUZ73E3046XK.pdf

Description:: MOSFET N-CH 200V 7A TO220-3

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Product details

Overview

BUZ73E3046XK from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 7 A continuous drain current, and 0.4 Ω maximum R_DS(on) at V_GS = 10 V. It features avalanche-rated ruggedness (E_AS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage, and TO-220 AB package for industrial motor control and DC-DC converter switching stages.

For engineers reviewing the BUZ73E3046XK datasheet, BUZ73E3046XK pinout, BUZ73E3046XK application, or BUZ73E3046XK equivalent, key selection criteria include its 200 V V_(BR)DSS, 7 A I_D, 0.4 Ω R_DS(on), avalanche energy rating, and thermal resistance (R_thJC ≤ 3.1 K/W) in high-reliability power switching designs.

Technical Context

This MOSFET employs a planar SIPMOS process optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drive, while transconductance (g_fs = 3–4.2 S) supports stable current regulation under load variation.

Dynamic parameters-including C_iss = 400–530 pF, C_oss = 85–130 pF, and t_r/t_f = 40–60 ns / 30–40 ns-enable efficient operation in hard-switched topologies up to ~100 kHz. The integrated body diode exhibits t_rr = 200 ns and Q_rr = 0.6 µC, suitable for freewheeling in non-synchronous buck or flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	200 V - Withstands 200 V drain-to-source blocking voltage before avalanche onset
I_D (continuous)	7 A at T_C = 28 °C - Supports sustained 7 A load current with heatsink
R_DS(on) max	0.4 Ω at V_GS = 10 V, I_D = 4.5 A - Limits conduction loss to ≤20 W at full current
E_AS	120 mJ - Survives single-pulse inductive energy events up to 120 mJ without failure
V_GS(th)	2.1–4.0 V - Ensures turn-on with 3.3 V or 5 V gate drivers; avoids false triggering
t_r/t_f	40–60 ns / 30–40 ns - Enables fast switching with low overlap loss in PWM applications
V_SD	1.3–1.7 V at I_F = 14 A - Defines forward drop of integrated body diode during freewheeling

Pinout & Package

BUZ73E3046XK is housed in a through-hole TO-220 AB package with isolated tab, rated for 40 W power dissipation at T_C = 25 °C and thermal resistance R_thJC ≤ 3.1 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires ≤±20 V drive; input capacitance C_iss = 400–530 pF
Pin 2 (D)	Drain	Main high-side current path; connected to load/inductor; rated for 200 V blocking
Pin 3 (S)	Source	Power return node; referenced for gate drive; carries full load current (7 A continuous)

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed single-pulse E_AS = 120 mJ enables robustness against inductive kickback in relay/motor drives
Low R_DS(on)	0.4 Ω max reduces I²R conduction loss to <20 W at 7 A, easing thermal design
Integrated body diode	Rated for 7 A continuous forward current (I_S) and 28 A pulsed (I_SM), eliminating need for external freewheeling diode
Wide temperature range	Operates from –55 °C to +150 °C junction temperature, supporting industrial and automotive under-hood use

Applications

Motor Drive Stage

DC-DC Converter Switch

Use Scenario: High-side switch in 24–48 V brushed DC motor control for industrial actuators.

IC Role / Device Role / Timing Role: Power switching element handling bidirectional current up to 7 A with integrated body diode freewheeling.

Use Value: Avalanche rating (E_AS = 120 mJ) prevents failure during sudden motor stall or reversal transients.

Use Scenario: Main switching transistor in non-synchronous buck converter for 12 V output from 48 V input.

IC Role / Device Role / Timing Role: High-side power FET operating at 50–100 kHz PWM with body diode conducting off-time current.

Use Value: Low R_DS(on) (0.4 Ω) limits conduction loss to <20 W, while t_r/t_f < 60 ns minimizes switching loss.

Power Supply Protection

Industrial Lighting Ballast

Use Scenario: Electronic fuse or overcurrent protection switch in 200 V AC/DC front-end supplies.

IC Role / Device Role / Timing Role: Fast-turn-off power switch triggered by current-sense comparator during fault conditions.

Use Value: Gate threshold (2.1–4.0 V) allows clean logic-level triggering; R_DS(on) enables accurate current sensing via V_DS.

Use Scenario: Lamp current regulator in magnetic HID ballast replacement circuits for street lighting.

IC Role / Device Role / Timing Role: Linear-mode or switched-mode current controller driving 70–150 W lamps.

Use Value: Wide T_j range (–55 to +150 °C) ensures reliability in outdoor enclosures; low C_oss (85–130 pF) improves high-frequency stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK20ZFP	200 V V_(BR)DSS, 7 A I_D, but R_DS(on) = 0.42 Ω (typ), no specified E_AS rating	Lacks guaranteed avalanche energy spec; less rugged in inductive switching	Acceptable where UIS stress is minimal and cost is prioritized
IRF640NPBF	200 V V_(BR)DSS, 18 A I_D, R_DS(on) = 0.18 Ω, but E_AS = 95 mJ (lower than BUZ73's 120 mJ)	Higher current rating but lower avalanche margin; larger die increases gate charge	Preferred when higher peak current is needed, but requires tighter gate drive design

Compared with STP7NK20ZFP and IRF640NPBF, BUZ73E3046XK delivers superior avalanche ruggedness (120 mJ) and tighter R_DS(on) tolerance (0.3–0.4 Ω), making it optimal for safety-critical industrial switching where inductive energy absorption is essential.

Availability

BUZ73E3046XK is available at Aetrix Electronics and suitable for motor drive stages, DC-DC converter switches, power supply protection circuits, and industrial lighting ballasts requiring stable component supply and long-term industrial lifecycle support.

Supply support for BUZ73E3046XK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73E3046XK belongs to Infineon's SIPMOS® family of high-voltage power MOSFETs, engineered for ruggedness, low on-resistance, and reliable operation in industrial motor control and power conversion systems.

FAQ

Is BUZ73E3046XK suitable for 3.3 V logic-level gate drive?

No. Its gate threshold voltage ranges from 2.1 V to 4.0 V, and full enhancement requires ≥10 V V_GS to achieve R_DS(on) ≤ 0.4 Ω. Driving with only 3.3 V results in high R_DS(on) (>2 Ω) and excessive conduction loss. A dedicated gate driver or level shifter is required for 3.3 V microcontrollers.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to approximately 4.5 A per the ID vs. TC curve. The SOA boundary at DC and 10 ms pulses shows that V_DS must remain below ~60 V at 4.5 A to avoid secondary breakdown, due to reduced thermal margin and increased R_DS(on) with temperature.

Does BUZ73E3046XK have a fully rated body diode for reverse recovery?

Yes. Its body diode is characterized for 7 A continuous (I_S) and 28 A pulsed (I_SM) operation, with t_rr = 200 ns and Q_rr = 0.6 µC at 100 V reverse bias and 100 A/µs di/dt. This makes it suitable for non-synchronous freewheeling, though not recommended for high-frequency synchronous rectification.

Can BUZ73E3046XK be used in parallel configurations?

Yes, but with caution. Its positive temperature coefficient for R_DS(on) (increasing with T_j) supports current sharing, yet gate drive imbalance and layout asymmetry can cause uneven current distribution. Use matched gate resistors, symmetrical PCB routing, and individual current monitoring for reliable paralleling above 10 A total load.

BUZ73E3046XK Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

BUZ73E3046XK FAQ

1.How can I place an order for BUZ73E3046XK through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73E3046XK on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73E3046XK reliable?

The price and inventory of BUZ73E3046XK are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73E3046XK is usually 5 days.

3.What payment methods are accepted for BUZ73E3046XK?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73E3046XK transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73E3046XK?

BUZ73E3046XK orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73E3046XK order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73E3046XK?

For technical support, including BUZ73E3046XK datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73E3046XK requirements.

6.How does Aetrix verify that BUZ73E3046XK is sourced from the original manufacturer or authorized distributors?

All BUZ73E3046XK products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73E3046XK meets industry standards.

7.What is the process for return or replacement of BUZ73E3046XK?

All BUZ73E3046XK units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73E3046XK, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73E3046XK part is unused and in its original packaging.

Return procedure for BUZ73E3046XK:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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