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Infineon Technologies BUZ73L

Part No.:
BUZ73L
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUZ73L.pdf
Description:
MOSFET N-CH 200V 7A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,150

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Product details

Overview

BUZ73L from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 7 A continuous drain current, and 0.4 Ω RDS(on) at VGS = 5 V. It features logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), avalanche-rated ruggedness (EAS = 120 mJ), and integrated body diode with 1.1–1.7 V forward voltage at 14 A - used in DC-DC converters, motor control H-bridges, and industrial power switching.

For engineers reviewing the BUZ73L datasheet, BUZ73L pinout, BUZ73L application, or BUZ73L equivalent, key selection criteria include its 200 V blocking capability, low gate threshold enabling direct microcontroller drive, thermal resistance of ≤3.1 K/W (chip-to-case), and robust single-pulse avalanche performance under inductive load switching.

Technical Context

This discrete power transistor operates in enhancement mode with a silicon-based SIPMOS structure optimized for high-voltage switching efficiency and thermal stability. Its gate threshold voltage range (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic, while the 0.4 Ω RDS(on) supports low conduction loss at 7 A DC.

The device integrates a fast-recovery body diode (trr = 140 ns, Qrr = 0.7 µC) and exhibits dynamic parameters including Ciss = 630–840 pF and td(on)/tr = 15–20/60–90 ns under standard test conditions - enabling use in hard-switched SMPS topologies up to ~100 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports 170 V AC rectified bus or 100 V DC systems with margin
ID (continuous)7 A at TC = 25 °C - delivers 28 W conduction loss-limited output in TO-220 heatsinked layout
RDS(on)0.4 Ω max at VGS = 5 V - yields ≤19.6 W I²R loss at full current
VGS(th)1.2–2.0 V - enables direct drive from 3.3 V MCU GPIO without level-shifting
EAS120 mJ - withstands single-pulse inductive energy in relay/motor snubber circuits
trr140 ns - limits reverse recovery losses during synchronous rectification
ZthJC≤3.1 K/W - allows 12.9 °C/W junction-to-heatsink rise at 40 W dissipation

Pinout & Package

BUZ73L is housed in a Pb-free PG-TO220-3 package with isolated tab (drain-connected). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The case is electrically connected to the drain terminal, requiring insulated mounting hardware when mounted to grounded heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateLogic-level control input; requires <20 V absolute max rating; low input capacitance (Ciss ≤ 840 pF)
Pin 2DrainHigh-side switch node; electrically tied to metal tab; must be isolated from heatsink unless system ground referenced
Pin 3SourcePower return path; defines local ground reference for gate drive; carries full load current

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) ≤ 2.0 V enables direct interface with 3.3 V/5 V microcontrollers without external drivers
Avalanche-rated operationGuaranteed 120 mJ single-pulse EAS eliminates need for external clamping in inductive load switching
Integrated fast body diode140 ns trr and 0.7 µC Qrr support efficient freewheeling in half-bridge and buck converter applications
Thermally robust package≤3.1 K/W RthJC allows sustained 7 A operation with modest heatsinking at ambient ≤60 °C

Applications

Motor ControlDC-DC Conversion

Use Scenario: Driving brushed DC motors in industrial actuators with PWM at 20–50 kHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch in H-bridge configuration; handles bidirectional current and inductive flyback.

Use Value: Avalanche rating absorbs back-EMF spikes without snubber components; 0.4 Ω RDS(on) limits I²R heating at 7 A stall current.

Use Scenario: Primary-side switch in non-isolated buck regulators powering 12 V loads from 24–48 V buses.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET; operates in hard-switched mode with gate drive from controller IC.

Use Value: Low Ciss and fast td(on)/tr reduce switching losses; logic-level gate simplifies driver design.

Power Supply ProtectionLighting Ballast

Use Scenario: Electronic circuit breaker in 24 V industrial PLC outputs with overcurrent and short-circuit detection.

IC Role / Device Role / Timing Role: Load switch with fast fault response; controlled via microcontroller GPIO with current-sense feedback.

Use Value: 7 A continuous rating supports 100 W loads; VGS(th) tolerance ensures stable turn-on across temperature.

Use Scenario: Lamp current regulation in magnetic HID ballasts using resonant ignition and constant-power control.

IC Role / Device Role / Timing Role: Resonant tank switch operating at 50–100 kHz; subjected to high dv/dt and repetitive avalanche stress.

Use Value: 200 V VDS withstands ignition transients; EAS rating sustains repeated energy pulses without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP7NK20Z200 V, 7 A, RDS(on) = 0.36 Ω, VGS(th) = 2–4 V, non-logic-levelRequires ≥5 V gate drive; higher VGS(th) reduces noise immunity in noisy environmentsSelect if higher gate threshold improves noise margin and gate driver is 5 V capable
IRF640N200 V, 18 A, RDS(on) = 0.18 Ω, VGS(th) = 2–4 V, non-logic-levelHigher current rating but needs 10 V gate drive; larger die increases switching losses at same frequencySelect for higher current headroom where gate driver supports 10 V and thermal budget allows

Compared with STP7NK20Z and IRF640N, BUZ73L offers lower gate threshold for direct 3.3 V MCU control and guaranteed avalanche ruggedness - making it preferable in space-constrained, logic-driven industrial switching where reliability under inductive stress is critical.

Availability

BUZ73L is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and power supply protection requiring stable component supply and long-term industrial lifecycle support.

Supply support for BUZ73L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73L belongs to the SIPMOS® logic-level power MOSFET product line, designed specifically for high-voltage, medium-current switching applications requiring direct microcontroller interfacing and rugged avalanche performance.

FAQ

Is BUZ73L suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage of 1.2–2.0 V and guaranteed turn-on at VGS = 5 V, BUZ73L fully enhances using standard 3.3 V GPIO outputs. Its low input capacitance (Ciss ≤ 840 pF) also minimizes required gate drive current, reducing stress on MCU pins.

Does BUZ73L require a heatsink in continuous 7 A operation?

Yes. At 7 A and 0.4 Ω RDS(on), conduction loss reaches ~19.6 W. With RthJC ≤ 3.1 K/W and typical RthCA > 20 K/W for TO-220 without heatsink, junction temperature would exceed 150 °C. A minimum 10 cm² aluminum heatsink is recommended for ambient ≤60 °C.

What is the maximum safe operating frequency for BUZ73L in a buck converter?

Based on td(on)/tr/td(off)/tf values (15–20/60–90/100–130/40–50 ns), BUZ73L supports hard-switched operation up to ~100 kHz with proper gate drive strength (RGS = 50 Ω) and layout optimization. Above this, switching losses dominate and thermal derating becomes necessary.

Can BUZ73L replace BUZ72L in existing designs?

Yes, with verification. BUZ73L shares identical PG-TO220-3 package, pinout, and 200 V rating with BUZ72L, but offers lower RDS(on) (0.4 Ω vs. 0.5 Ω) and improved avalanche energy (120 mJ vs. 80 mJ). Thermal and gate drive margins should be rechecked due to higher current density.

BUZ73L Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
400mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

BUZ73L FAQ

1.How can I place an order for BUZ73L through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73L reliable?

The price and inventory of BUZ73L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73L is usually 5 days.

3.What payment methods are accepted for BUZ73L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73L?

BUZ73L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73L?

For technical support, including BUZ73L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73L requirements.

6.How does Aetrix verify that BUZ73L is sourced from the original manufacturer or authorized distributors?

All BUZ73L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73L meets industry standards.

7.What is the process for return or replacement of BUZ73L?

All BUZ73L units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73L part is unused and in its original packaging.

Return procedure for BUZ73L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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