NXP Semiconductors BYD37M,115

Overview

BYD37M,115 from NXP Semiconductors (formerly Philips) is a fast soft-recovery controlled avalanche rectifier in SOD87 glass surface-mount package, rated for 1000 V repetitive peak reverse voltage (VRRM), 1.5 A average forward current at tie-point temperature of 105 °C, and guaranteed avalanche energy absorption of 7 mJ. It serves as a rugged, low-leakage power rectifier in high-voltage switched-mode power supplies and industrial DC link circuits.

For engineers reviewing the BYD37M,115 datasheet, BYD37M,115 pinout, BYD37M,115 application, or BYD37M,115 equivalent, key selection criteria include its 1000 V VRRM rating, 300 ns reverse recovery time (trr), 1.1 V max forward voltage at 1 A and Tj max, hermetically sealed Implotec™ glass package, and controlled avalanche capability for inductive load switching.

Technical Context

The BYD37M,115 employs a cavity-free cylindrical glass package using Implotec™ technology-ensuring matched thermal expansion coefficients, hermetic sealing, and fatigue-free reliability. Its fast soft-recovery behavior minimizes EMI during turn-off, while controlled avalanche operation allows safe clamping of inductive kickback without external snubbers.

This device operates with junction temperatures up to +175 °C and exhibits low reverse leakage (≤1 µA at VR = VRRM, 25 °C; ≤100 µA at 165 °C), enabling stable performance in high-temperature industrial environments. Thermal resistance from junction to tie-point is 30 K/W, supporting efficient PCB-level heat dissipation when mounted per Fig.11.

Key Specifications

Pinout & Package

BYD37M,115 uses the SOD87 hermetically sealed glass surface-mount package (2.1 × 3.7 mm body, 0.3 mm profile) with Implotec™ technology. Cathode is marked by a band on the glass body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-recovery rectifier applications.

Compared with STTH1R06 and VS-1N5819HM3, the BYD37M,115 uniquely combines 1000 V blocking, guaranteed 7 mJ avalanche energy, and hermetic SOD87 packaging-making it irreplaceable in high-reliability, high-voltage industrial rectification where thermal stability and transient robustness are mandatory.

Availability

BYD37M,115 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, AC-DC front-end rectification, motor drive DC link protection, and high-voltage battery charger input stages requiring stable component supply across extended product lifecycles.

Supply support for BYD37M,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering discrete and analog portfolio.

The BYD37 series was designed specifically for high-reliability, high-voltage rectification in industrial power conversion-emphasizing controlled avalanche robustness, soft recovery for EMI reduction, and hermetic packaging for harsh-environment longevity.

FAQ

What is the maximum junction temperature rating for BYD37M,115?

The BYD37M,115 has a maximum junction temperature (Tj) rating of +175 °C, verified per its thermal characteristics table and Fig.7. This allows sustained operation in high-ambient industrial environments. Derating begins above 1000 V reverse bias per Fig.7, and thermal design must respect Rth j-tp = 30 K/W to avoid exceeding this limit under full load. The BYD37M,115 maintains specified electrical parameters up to this Tj limit.

Does BYD37M,115 support controlled avalanche operation, and what is its rated energy?

Yes, BYD37M,115 is explicitly characterized for controlled avalanche operation with a guaranteed non-repetitive peak reverse avalanche energy (ERSM) of 7 mJ under L = 120 mH, Tj = Tj max prior to surge, and VR = VRRMmax. This is documented in the "LIMITING VALUES" table on page 3 of the datasheet. The BYD37M,115 leverages this capability to safely clamp inductive transients without external protection components.

What is the reverse recovery time (trr) of BYD37M,115, and how is it measured?

The BYD37M,115 has a maximum reverse recovery time (trr) of 300 ns, measured under standardized conditions: switching from IF = 0.5 A to IR = 1 A, with measurement taken at IR = 0.25 A (per Fig.12). This value applies to all BYD37K and BYD37M variants and is confirmed in the "ELECTRICAL CHARACTERISTICS" table. The BYD37M,115 achieves soft recovery to minimize voltage overshoot and EMI in high-frequency converters.

What package type does BYD37M,115 use, and what are its key mechanical features?

BYD37M,115 uses the SOD87 surface-mount package-a cavity-free cylindrical glass outline manufactured using Philips' Implotec™ technology. Key features include hermetic sealing, matched coefficient of thermal expansion across all materials, cathode identification via a visible band, and dimensions of 2.1 mm diameter × 3.7 mm length × 0.3 mm height. The BYD37M,115's SOD87 package enables high-voltage isolation in minimal PCB area.

What is the forward voltage (VF) specification for BYD37M,115 at maximum operating temperature?

The BYD37M,115 has a maximum forward voltage (VF) of 1.1 V at IF = 1 A and Tj = Tj max (175 °C), as specified in the "ELECTRICAL CHARACTERISTICS" table. At 25 °C, VF is ≤1.3 V under the same current. This low, thermally stable VF ensures predictable conduction losses across the full industrial temperature range. The BYD37M,115's VF performance directly supports thermal margin calculations in high-power rectifier designs.