Vishay BZD27B6V8P-HE3_A08

Overview

BZD27B6V8P-HE3_A08 from Vishay Semiconductors is an AEC-Q101 qualified unidirectional silicon planar Zener diode in DO-219AB (SMF) package, with nominal zener voltage 6.8 V ±2 % at 100 mA test current, dynamic resistance 1 Ω (typ), and temperature coefficient 0 to +0.07 %/°C - used for precision voltage regulation and overvoltage protection in automotive power rails.

For engineers reviewing the BZD27B6V8P-HE3_A08 datasheet, BZD27B6V8P-HE3_A08 pinout, BZD27B6V8P-HE3_A08 application, or BZD27B6V8P-HE3_A08 equivalent, key selection criteria include its 150 W peak surge power rating (10/1000 μs), 175 °C max junction temperature, low-profile SMD package, and AEC-Q101 qualification for under-hood automotive circuits.

Technical Context

This device operates as a single-element, unidirectional Zener diode optimized for stable voltage reference and transient voltage suppression. Its design integrates low dynamic resistance (1 Ω typ at I_ZT = 100 mA) and tight zener voltage tolerance (±2 %) to maintain regulation accuracy under varying load and temperature conditions.

It supports wave and reflow soldering per J-STD-020 MSL level 1 (peak 260 °C), meets JESD 201 Class 2 whisker test, and delivers ESD robustness >8 kV HBM / >800 V MM - enabling reliable deployment in harsh automotive environments without derating.

Key Specifications

Pinout & Package

DO-219AB (SMF) surface-mount package: cathode-marked anode-cathode configuration; 2-terminal unidirectional device with cathode band on top surface; footprint requires 1.3 × 1.3 mm pad per terminal and 2.9 mm center-to-center spacing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with SMBJ6.8A and BZX84-C6V8, the BZD27B6V8P-HE3_A08 uniquely combines AEC-Q101 qualification, ±2 % zener tolerance, 150 W surge rating, and DO-219AB thermal performance - making it the only option suitable for automotive-grade 6.8 V voltage reference and clamping in space-constrained, thermally demanding locations.

Availability

BZD27B6V8P-HE3_A08 is available at Aetrix Electronics and suitable for automotive power management, industrial sensor reference, and medical diagnostic equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BZD27B6V8P-HE3_A08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.

The BZD27B Series belongs to Vishay's eSMP® Zener platform, engineered specifically for AEC-Q101-compliant automotive voltage regulation and transient suppression where precision, surge robustness, and thermal resilience are critical.

FAQ

What is the maximum surge current the BZD27B6V8P-HE3_A08 can handle?

The BZD27B6V8P-HE3_A08 supports a non-repetitive peak reverse current of 13.3 A under 10/1000 μs waveform conditions, corresponding to its 150 W peak surge power rating. This value is measured at the clamping voltage V_C = 10.9 V and is validated per IEC 60-1 section 8. The BZD27B6V8P-HE3_A08 must be applied within its absolute maximum ratings, and repeated surges require thermal recovery time per Figure 5 in the datasheet.

Is the BZD27B6V8P-HE3_A08 RoHS compliant and halogen-free?

Yes, the BZD27B6V8P-HE3_A08 is RoHS-compliant and halogen-free per Vishay's material declaration (document #99912). The "HE3" suffix explicitly denotes RoHS-compliant, AEC-Q101-qualified construction with lead-free matte tin terminations and UL 94 V-0 molding compound. No brominated flame retardants or chlorine-based additives are used in its SMF package.

How does the temperature coefficient affect regulation accuracy of the BZD27B6V8P-HE3_A08?

The BZD27B6V8P-HE3_A08 has a temperature coefficient of 0 to +0.07 %/°C, meaning its zener voltage increases by up to 4.8 mV/°C across its operating range. At 125 °C ambient (with self-heating), total V_Z drift remains within ±0.5 % of nominal - critical for applications like sensor references where stability over temperature directly impacts measurement fidelity. The BZD27B6V8P-HE3_A08 achieves this via optimized silicon planar junction design.

Can the BZD27B6V8P-HE3_A08 be used in place of a standard 6.8 V Zener in non-automotive designs?

Yes, the BZD27B6V8P-HE3_A08 functions as a drop-in replacement for any 6.8 V Zener diode in commercial applications, offering superior specs: ±2 % tolerance (vs. typical ±5 %), 1 Ω dynamic resistance (vs. 5–10 Ω), and 150 W surge rating. However, its AEC-Q101 qualification and DO-219AB package may incur higher cost and layout constraints versus SOT-23 alternatives - so use the BZD27B6V8P-HE3_A08 where precision, reliability, or surge margin justifies the trade-off.

What is the thermal resistance from junction to ambient for the BZD27B6V8P-HE3_A08?

The BZD27B6V8P-HE3_A08 has a junction-to-ambient thermal resistance (R_thJA) of 180 K/W when mounted on an epoxy-glass PCB with 3 mm × 3 mm copper pads ≥40 μm thick. This value enables continuous power dissipation up to 800 mW at T_A = 30 °C, and derates linearly to zero at 175 °C junction temperature. For higher power operation, the BZD27B6V8P-HE3_A08 benefits from thermal vias or larger copper areas to reduce effective R_thJA.