Vishay BZD27B82P-HE3_A08
- Part No.:
- BZD27B82P-HE3_A08
- Manufacturer:
- Vishay
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
BZD27B82P-HE3_A08.pdf
- Description:
- ZENER DIODE SMF DO219AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,625
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BZD27B82P-HE3_A08 from Vishay Semiconductors is an AEC-Q101 qualified, unidirectional silicon planar Zener diode in SMF (DO-219AB) package, with nominal Zener voltage 82 V ±2 % at 10 mA test current, 150 W peak surge power rating (10/1000 μs), and clamping voltage 110 V at 1.3 A, designed for automotive-grade overvoltage protection in power supply rails and ECU input stages.
For engineers reviewing the BZD27B82P-HE3_A08 datasheet, BZD27B82P-HE3_A08 pinout, BZD27B82P-HE3_A08 application, or BZD27B82P-HE3_A08 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C max junction temperature, low dynamic resistance (30 Ω typ.), temperature coefficient (+0.08 to +0.13 %/°C), and compatibility with reflow soldering per J-STD-020 MSL level 1.
Technical Context
This Zener diode operates as a precision voltage reference and transient voltage suppressor in unidirectional configuration. Its electrical behavior is defined by tight Zener voltage tolerance (±2 %), low leakage current (≤5 μA at VR = 68 V), and stable temperature coefficient across the full operating range (−65 to +175 °C).
The device uses silicon planar construction for high reliability and meets JESD 201 Class 2 whisker test requirements. It delivers 150 W non-repetitive peak surge power under 10/1000 μs waveform and exhibits thermal resistance of 30 K/W (junction-to-lead) and 180 K/W (junction-to-ambient on 3 mm × 3 mm Cu pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 80.36 V min. / 82 V nom. / 83.64 V max. at IZT = 10 mA - ensures precise regulation within ±2 % tolerance for stable reference or clamp threshold |
| Clamping Voltage (VC) | 110 V at IRSM = 1.3 A (10/1000 μs) - defines maximum voltage seen by protected circuit during surge events |
| Peak Surge Power (PRSM) | 150 W (10/1000 μs) - supports robust transient suppression in automotive load-dump and ISO 7637-2 pulse 5a scenarios |
| Dynamic Resistance (ZZ) | 30 Ω max. at IZT = 10 mA - enables low voltage deviation under varying current, critical for accurate regulation |
| Temperature Coefficient (αVZ) | +0.08 %/°C min. / +0.13 %/°C max. - quantifies voltage drift with temperature, enabling thermal stability analysis in wide-temp environments |
| Junction Temperature (Tj) | −65 to +175 °C - permits operation in under-hood automotive locations and industrial high-temp enclosures |
| ESD Rating | HBM > 8 kV, MM > 800 V - provides inherent electrostatic discharge immunity during handling and board assembly |
Pinout & Package
Package: SMF (DO-219AB), low-profile surface-mount case outline compatible with SOD-123W/F/FL footprints; dimensions 2.9 mm × 1.9 mm × 0.85 mm; cathode marked with band on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to lower-potential node in Zener mode | Enables standard diode conduction path and defines polarity for unidirectional clamping |
| Cathode | Current exit terminal in forward bias; connected to higher-potential node in Zener mode | Identified by molded band; determines orientation for correct placement in surge protection circuits |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units, body electronics, and ADAS sensors |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow without baking, reducing manufacturing overhead |
| JESD 201 Class 2 whisker resistance | Prevents tin whisker growth in long-life automotive modules, ensuring interconnect reliability over 15+ years |
| Wave and reflow solderable | Compatible with industry-standard Pb-free reflow profiles up to 260 °C peak, supporting high-volume SMT lines |
| Low leakage current | ≤5 μA at 68 V reverse voltage minimizes standby power loss in always-on vehicle subsystems |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs against load dump transients per ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed between power rail and ground. Use Value: Clamps surge to ≤110 V while absorbing 150 W peak power, preventing damage to downstream regulators and microcontrollers. | Use Scenario: Safeguarding analog sensor inputs (e.g., pressure, temperature) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Zener-based clamping diode on signal line to limit voltage excursion during fast transients. Use Value: Limits voltage to ≤110 V with <1.3 A peak current, preserving signal integrity and ADC front-end accuracy. |
| Telecom DC Power Input Protection | Renewable Energy Charge Controller Protection |
Use Scenario: Guarding 48 V telecom rectifier outputs against lightning-induced surges on outdoor plant equipment. IC Role / Device Role / Timing Role: Primary overvoltage clamp on DC input stage before DC-DC conversion. Use Value: Withstands 150 W surge energy and maintains stable 82 V reference, enabling predictable crowbar triggering. | Use Scenario: Protecting solar charge controller MOSFET gates and MCU inputs from PV string voltage spikes during partial shading or fault conditions. IC Role / Device Role / Timing Role: Zener reference and transient clamp on battery-side voltage sense rail. Use Value: Provides ±2 % voltage accuracy and 175 °C operation, ensuring reliable protection in hot rooftop enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ82A-E3/52 | Higher PPPM (600 W), larger SMB package (4.5 mm × 3.9 mm), ±5 % VBR tolerance | Used where higher surge energy absorption is required but board space allows larger footprint | Select when >150 W surge capability is needed and AEC-Q101 is not mandatory |
| BZT52-B82-HE3-08 | SOD-123 package, lower PRSM (100 W), same ±2 % VZ, AEC-Q101 qualified | Suitable for space-constrained PCBs with moderate surge exposure (e.g., infotainment USB ports) | Choose for tighter layout constraints where 150 W rating is excessive |
Compared with BZD27B82P-HE3_A08, SMBJ82A-E3/52 offers higher surge capacity but lacks AEC-Q101 qualification and has looser voltage tolerance, while BZT52-B82-HE3-08 retains automotive qualification and precision but sacrifices surge robustness and thermal performance due to smaller package size.
Availability
BZD27B82P-HE3_A08 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, telecom power systems, and renewable energy controllers requiring stable component supply with AEC-Q101 compliance and high-temperature operation.
Supply support for BZD27B82P-HE3_A08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The BZD27B Series belongs to Vishay's eSMP® Zener portfolio, engineered specifically for AEC-Q101-compliant transient voltage suppression in harsh-environment automotive and industrial power systems.
FAQ
What is the Zener voltage tolerance of BZD27B82P-HE3_A08?
The BZD27B82P-HE3_A08 has a Zener voltage tolerance of ±2 %, with a nominal value of 82 V and specified range of 80.36 V to 83.64 V at 10 mA test current. This tight tolerance ensures consistent clamping and regulation performance across production lots and temperature extremes, making it suitable for precision automotive voltage reference and protection applications where repeatability is critical. The BZD27B82P-HE3_A08 achieves this via silicon planar process control and 100 % parametric screening.
Is BZD27B82P-HE3_A08 qualified for automotive use?
Yes, BZD27B82P-HE3_A08 is AEC-Q101 qualified, meaning it has passed stress tests for high-temperature operating life, temperature cycling, humidity bias, and mechanical shock required for automotive electronic components. Its qualification covers operation from −65 °C to +175 °C and includes JESD 201 Class 2 whisker testing and MSL Level 1 handling. The BZD27B82P-HE3_A08 is intended for use in engine control units, body control modules, and ADAS subsystems where reliability under vibration and thermal cycling is mandatory.
What is the maximum clamping voltage of BZD27B82P-HE3_A08 during a surge event?
The maximum clamping voltage (VC) of BZD27B82P-HE3_A08 is 110 V at a peak surge current (IRSM) of 1.3 A under the 10/1000 μs waveform per IEC 61000-4-5. This value is measured at TJ = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The BZD27B82P-HE3_A08 maintains this clamping performance across its full operating temperature range due to its positive temperature coefficient and stable silicon planar structure.
Can BZD27B82P-HE3_A08 be used in reflow soldering processes?
Yes, BZD27B82P-HE3_A08 is fully compatible with lead-free reflow soldering, rated for peak temperatures up to 260 °C per J-STD-020 MSL Level 1. Its SMF (DO-219AB) package uses UL 94 V-0 molding compound and is qualified for both wave and reflow processes. The BZD27B82P-HE3_A08 requires no pre-baking and supports standard Pb-free thermal profiles, making it suitable for high-throughput SMT assembly lines serving automotive Tier 1 suppliers and industrial OEMs.
What is the thermal resistance of BZD27B82P-HE3_A08?
The BZD27B82P-HE3_A08 has a junction-to-lead thermal resistance (RthJL) of 30 K/W and a junction-to-ambient resistance (RthJA) of 180 K/W when mounted on a 3 mm × 3 mm copper pad (≥40 μm thick) on epoxy-glass PCB. These values enable effective heat dissipation during continuous Zener operation and transient surge events. The BZD27B82P-HE3_A08 leverages its low RthJL to sustain high-power pulses without exceeding 175 °C junction temperature, critical for automotive under-hood reliability.
BZD27B82P-HE3_A08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay
- Package/Case:
- DO-219AB
- Series:
- BZD27B, eSMP®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 68V (Max)
- Voltage - Breakdown (Min):
- 80.36V
- Voltage - Clamping (Max) @ Ipp:
- 110V
- Current - Peak Pulse (10/1000µs):
- 1.3A
- Power - Peak Pulse:
- 150W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
BZD27B82P-HE3_A08 FAQ
1.How can I place an order for BZD27B82P-HE3_A08 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZD27B82P-HE3_A08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZD27B82P-HE3_A08 reliable?
The price and inventory of BZD27B82P-HE3_A08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZD27B82P-HE3_A08 is usually 5 days.
3.What payment methods are accepted for BZD27B82P-HE3_A08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZD27B82P-HE3_A08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZD27B82P-HE3_A08?
BZD27B82P-HE3_A08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZD27B82P-HE3_A08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZD27B82P-HE3_A08?
For technical support, including BZD27B82P-HE3_A08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZD27B82P-HE3_A08 requirements.
6.How does Aetrix verify that BZD27B82P-HE3_A08 is sourced from the original manufacturer or authorized distributors?
All BZD27B82P-HE3_A08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZD27B82P-HE3_A08 meets industry standards.
7.What is the process for return or replacement of BZD27B82P-HE3_A08?
All BZD27B82P-HE3_A08 units undergo pre-shipment inspection (PSI). If there is an issue with BZD27B82P-HE3_A08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZD27B82P-HE3_A08 part is unused and in its original packaging.
Return procedure for BZD27B82P-HE3_A08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZD27B82P-HE3_A08 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

