Vishay General Semiconductor - Diodes Division BZW04P53HE3/73
- Part No.:
- BZW04P53HE3/73
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-204AL, DO-41, Axial
- Datasheet:
-
BZW04P53HE3/73.pdf
- Description:
- TVS DIODE 53VWM 85VC DO204AL
- Quantity:
- Payment:

- Shipping:

Inventory:8,780
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BZW04P53HE3/73 from Vishay General Semiconductor is a bi-directional TransZorb® transient voltage suppressor (TVS) diode designed for robust overvoltage protection in signal and power lines. It features a 53.0 V stand-off voltage (VWM), 85.0 V maximum clamping voltage (VC) at 4.7 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 µs waveform), making it suitable for safeguarding automotive sensor interfaces and industrial I/O circuits against ESD and inductive switching transients.
For engineers reviewing the BZW04P53HE3/73 datasheet, BZW04P53HE3/73 pinout, BZW04P53HE3/73 application, or BZW04P53HE3/73 equivalent, key selection considerations include its AEC-Q101 qualification, DO-204AL (DO-41) package, bi-directional polarity, 0.67 µA max reverse leakage at VWM, and temperature coefficient of 0.104 %/°C - all critical for reliable operation in automotive-grade designs.
Technical Context
This bi-directional TVS diode operates symmetrically in both forward and reverse bias, enabling clamping of positive and negative transients without polarity constraints. Its glass-passivated junction ensures stable breakdown behavior and low incremental surge resistance, while the 10/1000 µs waveform rating reflects real-world lightning and load-dump surge immunity per IEC 61000-4-5.
The device is rated for continuous operation from –55 °C to +175 °C junction temperature and supports soldering up to 275 °C for 10 s (JESD 22-B106). Its 1.5 W steady-state power dissipation (PD) and 0.104 %/°C VBR temperature coefficient ensure predictable performance across thermal extremes in engine control units and motor drive feedback paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 53.0 V - Maximum continuous working voltage before clamping begins; defines safe operating margin below system rail. |
| VC @ IPPM | 85.0 V at 4.7 A - Clamped voltage during 10/1000 µs surge; limits stress on downstream ICs like CAN transceivers. |
| PPPM | 400 W - Peak pulse power handling capability; meets Level 4 IEC 61000-4-5 surge immunity requirements. |
| IPPM | 4.7 A - Peak pulse current supported at rated VC; determines minimum series impedance needed for compliance. |
| TJ max | +175 °C - Maximum junction temperature; enables placement near heat sources in under-hood automotive modules. |
| Leakage @ VWM | 0.67 µA - Ultra-low reverse leakage; avoids signal distortion in high-impedance sensor bias networks. |
| AEC-Q101 | Qualified - Validated for automotive reliability including temperature cycling, HTRB, and ESD testing per AEC standard. |
Pinout & Package
Package: DO-204AL (DO-41), axial lead, epoxy-molded case meeting UL 94 V-0 flammability rating. Matte tin-plated leads compliant with J-STD-002 and JESD22-B102 solderability standards. HE3 suffix denotes AEC-Q101 qualification and JESD201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (bi-directional) | Transient conduction path | No polarity marking; symmetrical terminals conduct equally in either direction during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated chip junction | Ensures stable, repeatable breakdown voltage and long-term reliability under repetitive surge stress. |
| 400 W peak pulse power (10/1000 µs) | Supports automotive load-dump and ISO 7637-2 Pulse 5a/b immunity without derating at TA ≤ 85 °C. |
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control, body electronics, and ADAS sensor interfaces. |
| Bi-directional configuration | Eliminates need for polarity-aware layout; protects AC-coupled or differential signal lines (e.g., LIN, RS-485). |
| Low incremental surge resistance | Minimizes VC overshoot during fast transients, improving protection margin for 3.3 V/5 V logic interfaces. |
Applications
| Automotive Sensor Protection | Industrial I/O Interface |
|---|---|
Use Scenario: Protecting analog output lines of pressure/temperature sensors in engine management systems exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Bi-directional clamping element placed between sensor output and microcontroller ADC input. Use Value: Limits transient voltage to ≤85.0 V during 400 W surges, preventing ADC saturation and latch-up in 5 V supply domains. |
Use Scenario: Safeguarding 24 V PLC digital input channels against field-wiring induced transients and relay coil flyback. IC Role / Device Role / Timing Role: Primary overvoltage clamp on dry-contact input circuit before optocoupler or Schmitt trigger. Use Value: Withstands 4.7 A pulses while maintaining <0.67 µA leakage, ensuring clean logic-level detection and no false triggering. |
| Telecom Line Protection | Consumer Power Adapter Input |
Use Scenario: Secondary-side transient suppression on Ethernet PHY power rails (3.3 V, 1.8 V) in PoE-powered devices. IC Role / Device Role / Timing Role: Fast-response TVS placed adjacent to PHY IC power pins to absorb ESD and crosstalk-induced spikes. Use Value: Sub-1 ns response time and 85.0 V clamping protect sensitive PHY silicon without adding capacitance that degrades signal integrity. |
Use Scenario: Input-stage surge protection on 12 V DC input of smart home hubs subjected to accidental AC mains coupling. IC Role / Device Role / Timing Role: First-line defense before primary DC-DC converter, absorbing line-to-ground transients. Use Value: 53.0 V VWM provides 10 % margin above nominal 12 V rail while enabling full 400 W surge absorption per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ53A-E3/52 | DO-214AA (SMB) package; 53.0 V VWM; 87.1 V VC @ 4.6 A; same PPPM (400 W); unidirectional only. | Requires polarity-aware PCB layout; higher thermal resistance than DO-41 in free-air conditions. | Select when board space is constrained and unidirectional protection suffices with existing cathode-marked routing. |
| 1.5KE56A | DO-201AD package; 56.0 V VWM; 93.6 V VC @ 4.3 A; 1500 W PPPM; unidirectional; no AEC-Q101 qualification. | Higher clamping voltage reduces protection margin; lacks automotive qualification and tighter leakage spec. | Acceptable for cost-sensitive industrial applications where AEC-Q101 is not mandated and 93.6 V clamping is within system tolerance. |
Compared with SMBJ53A-E3/52 and 1.5KE56A, BZW04P53HE3/73 offers bi-directional symmetry, AEC-Q101 validation, and lower clamping voltage - critical for protecting bidirectional communication lines and meeting OEM automotive reliability requirements without layout redesign.
Availability
BZW04P53HE3/73 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, and telecom power rail protection requiring stable component supply and long-term lifecycle support.
Supply support for BZW04P53HE3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and automotive-grade qualification.
The BZW04P53HE3/73 belongs to the TransZorb® family of TVS diodes engineered specifically for high-energy transient suppression in harsh environments - targeting automotive, industrial, and communications infrastructure applications demanding AEC-Q101 compliance and stable parametric performance.
FAQ
What is the clamping voltage of BZW04P53HE3/73 under a 10/1000 µs surge?
The BZW04P53HE3/73 clamps to a maximum of 85.0 V when subjected to its rated 4.7 A peak pulse current (IPPM) using the standardized 10/1000 µs double-exponential waveform. This value is guaranteed across the full operating temperature range and forms the basis for downstream circuit protection margin calculations in designs using BZW04P53HE3/73.
Is BZW04P53HE3/73 suitable for automotive applications?
Yes, BZW04P53HE3/73 is AEC-Q101 qualified and explicitly rated for automotive use. Its construction - including glass-passivated junction, DO-41 package with matte tin leads, and operation up to +175 °C junction temperature - meets the environmental and reliability requirements for engine control units, body electronics, and ADAS sensor interfaces where BZW04P53HE3/73 is deployed.
Does BZW04P53HE3/73 have polarity markings?
No, BZW04P53HE3/73 is a bi-directional TVS diode and carries no polarity marking on the package. Its symmetrical electrical characteristics allow installation in either orientation on the PCB, simplifying layout for AC-coupled or differential signal paths where polarity awareness would otherwise complicate routing - a key advantage of BZW04P53HE3/73 over unidirectional alternatives.
What is the maximum reverse leakage current of BZW04P53HE3/73 at its stand-off voltage?
At its 53.0 V stand-off voltage (VWM) and ambient temperature of 25 °C, BZW04P53HE3/73 exhibits a maximum reverse leakage current (ID) of 0.67 µA. This ultra-low leakage ensures minimal loading on high-impedance sensor bias networks and preserves accuracy in precision analog front-ends where BZW04P53HE3/73 is commonly applied.
How does the temperature coefficient affect BZW04P53HE3/73's breakdown voltage?
The BZW04P53HE3/73 has a maximum temperature coefficient of 0.104 %/°C for its breakdown voltage (VBR). This means VBR increases by up to 0.055 V per °C rise above 25 °C - a predictable drift that must be accounted for in high-temperature applications such as under-hood automotive modules, where BZW04P53HE3/73 maintains functional integrity up to +175 °C junction temperature.
BZW04P53HE3/73 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-204AL, DO-41, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 53V
- Voltage - Breakdown (Min):
- 58.9V
- Voltage - Clamping (Max) @ Ipp:
- 85V
- Current - Peak Pulse (10/1000µs):
- 4.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AL (DO-41)
BZW04P53HE3/73 FAQ
1.How can I place an order for BZW04P53HE3/73 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZW04P53HE3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZW04P53HE3/73 reliable?
The price and inventory of BZW04P53HE3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZW04P53HE3/73 is usually 5 days.
3.What payment methods are accepted for BZW04P53HE3/73?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZW04P53HE3/73 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZW04P53HE3/73?
BZW04P53HE3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZW04P53HE3/73 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZW04P53HE3/73?
For technical support, including BZW04P53HE3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZW04P53HE3/73 requirements.
6.How does Aetrix verify that BZW04P53HE3/73 is sourced from the original manufacturer or authorized distributors?
All BZW04P53HE3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZW04P53HE3/73 meets industry standards.
7.What is the process for return or replacement of BZW04P53HE3/73?
All BZW04P53HE3/73 units undergo pre-shipment inspection (PSI). If there is an issue with BZW04P53HE3/73, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZW04P53HE3/73 part is unused and in its original packaging.
Return procedure for BZW04P53HE3/73:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZW04P53HE3/73 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

