My Inquiry
My Account
Toshiba Semiconductor and Storage CBS10S30,L3F
- Part No.:
- CBS10S30,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
CBS10S30,L3F.pdf
- Description:
- DIODE SCHOTTKY 20V 1A CST2B
- Quantity:
- Payment:
- Shipping:
Inventory:6,608
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CBS10S30 from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial Schottky barrier diode optimized for high-speed switching in low-voltage DC/DC converters and power management circuits, with 30 V peak reverse voltage, 1.0 A average rectified current, 0.39 V forward voltage at 1 A, and CST2B surface-mount package.
For engineers reviewing the CBS10S30 datasheet, CBS10S30 pinout, CBS10S30 application, or CBS10S30 equivalent, key selection criteria include low forward voltage drop for efficiency-critical 3.3 V/5 V rail rectification, thermal derating awareness due to Schottky leakage, and FR4 board layout compatibility per 645 mm² copper pad requirement.
Technical Context
The CBS10S30 employs a planar Schottky junction structure on silicon epitaxial substrate to achieve fast recovery (no minority carrier storage) and low forward conduction loss. Its 30 V VRM rating targets input stages of buck converters operating from 12 V or lower rails.
Thermal design must account for reverse leakage current increasing with temperature - IR reaches 0.5 mA max at VR = 30 V and Ta = 25 °C, and rises significantly above 85 °C, requiring careful power dissipation modeling on FR4 boards with specified 25.4 mm × 25.4 mm × 1.6 mm copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage (VRM) | 30 V - Supports input rectification in ≤12 V nominal systems with margin against transients. |
| Average Rectified Current (IO) | 1.0 A - Rated for continuous conduction on FR4 PCBs with 645 mm² copper pad area. |
| Forward Voltage (VF @ 1 A) | 0.39 V max - Enables <1.5% conduction loss in 5 V output synchronous rectifier designs. |
| Reverse Current (IR @ 30 V) | 0.5 mA max - Requires thermal-aware layout to avoid runaway under sustained high-temperature bias. |
| Total Capacitance (Ct) | 135 pF typ. @ 0 V, 1 MHz - Limits high-frequency noise filtering capability and affects snubber design. |
| Junction Temperature (Tj) | 125 °C max - Defines upper thermal limit for reliability; derating required above 85 °C ambient. |
Pinout & Package
Package: CST2B (TOSHIBA 1-1V1S), ultra-small surface-mount plastic package, 1.3 mg typical weight, footprint compatible with JEDEC MO-203-AB outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node in forward conduction; requires thermal pad connection for heat dissipation. |
| 2 | Anode | Connected to lower-potential node; polarity-sensitive placement critical for rectifier function. |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at 1 A | 0.39 V max enables >95% efficiency in 3.3 V–5 V synchronous rectifier applications. |
| Fast Switching | No reverse recovery charge (Qrr ≈ 0) eliminates switching losses in high-frequency (>500 kHz) converters. |
| Small Footprint | CST2B package occupies <1.0 mm² board area, suitable for space-constrained portable power modules. |
| FR4-Optimized Thermal Rating | 1.0 A IO validated on standard 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² Cu pad. |
Applications
| DC/DC Converter Output Rectification | USB Power Delivery Clamp |
|---|---|
Use Scenario: Secondary-side rectification in 5 V/3.3 V buck converters powering FPGAs or microcontrollers. IC Role / Device Role / Timing Role: Low-loss unidirectional current path replacing synchronous MOSFETs where gate drive complexity is undesirable. Use Value: Reduces BOM count and layout area versus active rectification while maintaining <2% voltage drop at full load. |
Use Scenario: Reverse-polarity protection and overvoltage clamping in USB-C PD sink ports. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting transient overshoot during hot-plug events. Use Value: Sub-100 ns response prevents damage to Type-C controller ICs during 20 V PD negotiation surges. |
| Automotive Body Control Module Supply | Industrial Sensor Node Power Rail |
Use Scenario: Input protection and reverse-battery protection in 12 V automotive body electronics. IC Role / Device Role / Timing Role: Series-connected Schottky diode blocking reverse current during jump-start conditions. Use Value: Withstands 3 A non-repetitive surge (IFSM = 3 A) and operates up to 125 °C junction temperature. |
Use Scenario: Power path isolation between Li-ion battery and 3.3 V sensor MCU in wireless IoT nodes. IC Role / Device Role / Timing Role: Prevents backfeed from regulated rail to battery during sleep mode. Use Value: 0.15 mA typical IR at 30 V ensures <1 µA standby current drain, extending battery life by >15%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-30 | Same VRM (30 V), but 0.5 A IO rating and larger SOD-123FL package; VF = 0.45 V @ 0.5 A. | Better thermal robustness on larger pads; unsuitable for 1 A continuous loads. | Select RB050M-30 only when board space allows larger footprint and current demand is ≤0.5 A. |
| SS12 | 20 V VRM, 1 A IO, DO-214AC package; VF = 0.5 V @ 1 A; higher capacitance (180 pF). | Limited to ≤12 V input systems; less efficient at 1 A due to higher VF. | Choose SS12 only if cost sensitivity outweighs efficiency loss and 30 V margin is unnecessary. |
Compared with RB050M-30 and SS12, the CBS10S30 uniquely delivers 1 A current handling in a sub-1 mm² CST2B package with the lowest VF (0.39 V) at rated current - making it optimal for compact, high-efficiency 5 V–12 V power rails where thermal budget and board area are constrained.
Availability
CBS10S30 is available at Aetrix Electronics and suitable for DC/DC converter output rectification, USB power delivery clamping, and automotive body control module supply requiring stable component supply across industrial and consumer production cycles.
Supply support for CBS10S30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and automotive-grade reliability.
The CBS10S30 belongs to Toshiba's CST2B Schottky diode product line, engineered specifically for high-frequency, low-voltage power conversion in space-constrained applications such as portable electronics and automotive ECUs.
FAQ
What is the maximum continuous current rating for CBS10S30?
The CBS10S30 has an average rectified current (IO) rating of 1.0 A, verified under defined thermal conditions: mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board with 645 mm² copper pad area. Exceeding this current without enhanced thermal management risks junction temperature exceeding 125 °C, accelerating degradation. Always apply derating curves from the Toshiba Semiconductor Reliability Handbook when ambient temperature exceeds 75 °C.
Does CBS10S30 have a specified reverse recovery time?
No - the CBS10S30 is a Schottky barrier diode and exhibits no minority carrier storage, so reverse recovery time (trr) is effectively zero. This eliminates reverse recovery losses in high-frequency switching applications. The datasheet confirms fast switching via absence of Qrr specification and inclusion of IF–VF and IR–VR curves, consistent with majority-carrier conduction behavior.
What does the marking "8C" indicate on CBS10S30?
The marking "8C" is the Toshiba-specific device code laser-etched on the top surface of the CBS10S30 in CST2B package. It identifies the part as the CBS10S30 variant and is used for traceability and visual verification during assembly and inspection. Full part number "CBS10S30" appears in documentation and packaging, while "8C" serves as the compact board-level identifier per Fig. 5.1 in the official datasheet Rev. 4.0.A.
Can CBS10S30 be used in automotive under-hood applications?
The CBS10S30 supports junction temperatures up to 125 °C and is qualified for automotive body electronics per Toshiba's reliability standards, but it is not AEC-Q101 qualified. It is suitable for under-dash or cabin-mounted modules (e.g., infotainment power supplies), not under-hood engine control units. For AEC-Q101 compliance, consider Toshiba's AEC-Q101-certified equivalents like the DF2S6.3M.
How does CBS10S30's capacitance affect EMI performance?
The CBS10S30 has a typical total capacitance (Ct) of 135 pF at 0 V and 1 MHz. This parasitic capacitance forms a low-impedance path for high-frequency noise, potentially increasing conducted EMI in switch-mode power supplies above 10 MHz. Layout best practices - including minimized trace length between anode/cathode and adjacent ground planes - are essential to mitigate resonance effects and ensure EMC compliance in Class B emissions testing.
CBS10S30,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 2-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 450 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 µA @ 30 V
- Capacitance @ Vr, F:
- 135pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2B
- Operating Temperature - Junction:
- 125°C (Max)
CBS10S30,L3F FAQ
1.How can I place an order for CBS10S30,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for CBS10S30,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CBS10S30,L3F reliable?
The price and inventory of CBS10S30,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CBS10S30,L3F is usually 5 days.
3.What payment methods are accepted for CBS10S30,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CBS10S30,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CBS10S30,L3F?
CBS10S30,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CBS10S30,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CBS10S30,L3F?
For technical support, including CBS10S30,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CBS10S30,L3F requirements.
6.How does Aetrix verify that CBS10S30,L3F is sourced from the original manufacturer or authorized distributors?
All CBS10S30,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CBS10S30,L3F meets industry standards.
7.What is the process for return or replacement of CBS10S30,L3F?
All CBS10S30,L3F units undergo pre-shipment inspection (PSI). If there is an issue with CBS10S30,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CBS10S30,L3F part is unused and in its original packaging.
Return procedure for CBS10S30,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CBS10S30,L3F Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
