Toshiba Semiconductor and Storage CBS10S40,L3F
- Part No.:
- CBS10S40,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
CBS10S40,L3F.pdf
- Description:
- DIODE SCHOTTKY 40V 1A CST2B
- Quantity:
- Payment:

- Shipping:

Inventory:8,993
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CBS10S40,L3F from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial Schottky barrier diode optimized for high-speed switching in compact DC-DC converters and power management circuits, featuring VF(2) = 0.48 V (typ.), IO = 1.0 A average rectified current, VR = 30 V reverse voltage, and CST2B package with 0.40 mm max height.
For engineers reviewing the CBS10S40,L3F datasheet, CBS10S40,L3F pinout, CBS10S40,L3F application, or CBS10S40,L3F equivalent, key selection criteria include low forward voltage for efficiency-critical 1A switching paths, ultra-thin profile for space-constrained PCBs, thermal derating under high-voltage reverse bias, and compatibility with FR4 board mounting per Note 1.
Technical Context
This Schottky diode uses a silicon epitaxial structure to achieve fast recovery with minimal reverse recovery charge, enabling operation in high-frequency (>1 MHz) synchronous buck converter freewheeling paths. Its low VF(1) = 0.36 V (typ.) at IF = 0.5 A and low Ct = 120 pF (typ.) at VR = 0 V support efficient switching with reduced conduction loss and capacitive switching noise.
The device's thermal design requires attention to reverse leakage (IR ≤ 150 µA at VR = 40 V), which increases with temperature and may contribute to thermal runaway if not managed via layout and ambient control. Absolute maximum ratings assume FR4 mounting with 645 mm² copper pad (Note 1) and 10 ms pulse testing (Note 2).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage | 40 V - defines maximum transient voltage tolerance during switching spikes |
| Forward Voltage VF(2) | 0.48 V (typ.) at 1 A - directly reduces conduction loss in high-current freewheeling paths |
| Average Rectified Current | 1.0 A - sets continuous DC current capability on FR4 board with specified copper area |
| Total Capacitance | 120 pF (typ.) at 0 V - limits high-frequency displacement current and EMI generation |
| Junction Temperature | 125 °C - maximum operating junction temperature before reliability degradation |
| Package Height | 0.40 mm (max) - enables ultra-low-profile placement in slim portable electronics |
Pinout & Package
Package: CST2B - ultra-thin surface-mount package with 1.3 mg typical weight and 0.40 mm maximum height, designed for high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node in forward conduction; carries full output current in buck converter freewheel path |
| 2 | Anode | Connected to lower-potential node (e.g., ground or switch node); polarity-sensitive for correct rectification |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | VF(2) = 0.48 V (typ.) at 1 A - cuts conduction loss by ~30% vs. standard PN diodes in 1A DC-DC outputs |
| Ultra-thin profile | 0.40 mm max height - enables stacking under shields or integration into <1.0 mm total thickness assemblies |
| Low junction capacitance | Ct = 120 pF (typ.) - minimizes high-frequency coupling and improves EMI performance in >1 MHz converters |
| FR4-optimized thermal rating | IO = 1.0 A with 645 mm² Cu pad - provides realistic current capacity for standard PCB fabrication |
Applications
| Mobile Phone Power Management | USB-C PD Adapter Output Stage |
|---|---|
Use Scenario: Freewheeling diode in 2 MHz buck converter supplying core voltage to application processor. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-efficiency, low-noise power rail generation. Use Value: 0.48 V VF(2) reduces power loss by 0.52 W vs. 1.0 V PN diode at 1 A, lowering thermal load in sealed chassis. | Use Scenario: Output rectifier in compact 45 W USB-C PD adapter with 30 V output. IC Role / Device Role / Timing Role: Low-loss secondary-side rectifier handling up to 1.0 A continuous output current. Use Value: 30 V VR rating matches 30 V output requirement while 0.40 mm height allows dense transformer + rectifier layout. |
| Wearable Device Battery Charging | Industrial Sensor Node DC-DC |
Use Scenario: Reverse-polarity protection and charging path diode in coin-cell–powered wearable with 3.7 V Li-ion battery. IC Role / Device Role / Timing Role: Low-VF blocking diode preventing battery discharge through USB input when unpowered. Use Value: 0.36 V VF(1) at 0.5 A ensures minimal voltage drop across protection path, preserving runtime margin. | Use Scenario: Input protection and flyback clamp in isolated 5 V → 3.3 V DC-DC for RS-485 sensor node. IC Role / Device Role / Timing Role: Transient-suppressing clamp diode absorbing inductive kickback from isolation transformer. Use Value: 40 V VRM withstands 36 V industrial bus transients while 120 pF capacitance avoids signal integrity impact on 250 kbps RS-485 lines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RBS1UA40ATF | Same VR = 40 V, but VF(2) = 0.55 V (max) vs. 0.55 V (max) for CBS10S40,L3F; slightly higher IR = 200 µA (max) at VR = 40 V | Designed for automotive AEC-Q101 qualification; not required for consumer wearables or USB adapters | Select RBS1UA40ATF only if AEC-Q101 compliance is mandatory; otherwise CBS10S40,L3F offers lower typical VF and smaller height. |
| SS12 | DO-214AC package (2.7 mm height) vs. CST2B (0.4 mm); VF(2) = 0.5 V (typ.) at 1 A; IO = 1.0 A but rated on larger PCB pad | Through-hole or larger SMT footprint; unsuitable for sub-1 mm height constraints | Choose SS12 only when board assembly process cannot support 0.4 mm profile or when legacy DO-214AC tooling is fixed. |
Compared with RBS1UA40ATF and SS12, CBS10S40,L3F delivers the lowest profile and best typical forward voltage for space- and efficiency-critical 1A switching applications, though it lacks automotive qualification and requires careful thermal design due to Schottky leakage sensitivity.
Availability
CBS10S40,L3F is available at Aetrix Electronics and suitable for mobile phone power management, USB-C PD adapter output stages, wearable battery charging circuits, and industrial sensor node DC-DC converters requiring stable component supply and consistent parametric performance across production lots.
Supply support for CBS10S40,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.
The CBS10S40,L3F belongs to Toshiba's CST2B-packaged Schottky barrier diode product line, engineered specifically for ultra-thin, high-frequency power conversion in portable and space-constrained electronics.
FAQ
What is the maximum average current rating for CBS10S40,L3F under standard PCB conditions?
The CBS10S40,L3F supports an average rectified current of 1.0 A when mounted on an FR4 board with a 25.4 mm × 25.4 mm × 1.6 mm substrate and 645 mm² copper pad area (per Note 1 in the datasheet). This rating assumes Ta = 25 °C and accounts for thermal dissipation limits in typical consumer-grade PCB layouts. Exceeding this current without enhanced cooling risks junction temperature exceeding 125 °C.
Does CBS10S40,L3F have AEC-Q101 qualification for automotive use?
No, CBS10S40,L3F is not AEC-Q101 qualified. It is intended for industrial and consumer applications such as USB-C PD adapters and wearable electronics. For automotive-grade alternatives, consider Toshiba's RBS1UA40ATF, which carries AEC-Q101 certification and shares similar electrical specs but uses a different package and has higher max reverse leakage.
What does the marking code "7C" indicate on CBS10S40,L3F?
The marking code "7C" laser-etched on the top surface of the CBS10S40,L3F identifies the specific device variant and manufacturing lot within Toshiba's CST2B Schottky diode family. It corresponds exclusively to the CBS10S40 part number and confirms compliance with the Rev.4.0.A datasheet specifications, including VF(2) = 0.48 V (typ.) and VR = 30 V.
How does the 0.40 mm package height of CBS10S40,L3F impact PCB layout?
The 0.40 mm maximum height of the CBS10S40,L3F in CST2B package enables placement beneath metal shields, under connectors, or in stacked modules where total Z-height is constrained to <1.0 mm. This eliminates the need for raised keepouts and allows tighter component spacing-critical for modern smartphones and hearables. Standard reflow profiles for thin SMT devices apply.
Can CBS10S40,L3F be used as a reverse-polarity protection diode in 3.7 V Li-ion systems?
Yes, CBS10S40,L3F is suitable for reverse-polarity protection in 3.7 V Li-ion systems. With VF(1) = 0.36 V (typ.) at 0.5 A, it introduces minimal voltage drop in series with the battery path, preserving runtime. Its 30 V reverse voltage rating provides ample margin against transient spikes, and its low 120 pF capacitance avoids interference with battery fuel gauging signals.
CBS10S40,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 2-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 µA @ 40 V
- Capacitance @ Vr, F:
- 120pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2B
- Operating Temperature - Junction:
- 125°C (Max)
CBS10S40,L3F FAQ
1.How can I place an order for CBS10S40,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for CBS10S40,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CBS10S40,L3F reliable?
The price and inventory of CBS10S40,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CBS10S40,L3F is usually 5 days.
3.What payment methods are accepted for CBS10S40,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CBS10S40,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CBS10S40,L3F?
CBS10S40,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CBS10S40,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CBS10S40,L3F?
For technical support, including CBS10S40,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CBS10S40,L3F requirements.
6.How does Aetrix verify that CBS10S40,L3F is sourced from the original manufacturer or authorized distributors?
All CBS10S40,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CBS10S40,L3F meets industry standards.
7.What is the process for return or replacement of CBS10S40,L3F?
All CBS10S40,L3F units undergo pre-shipment inspection (PSI). If there is an issue with CBS10S40,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CBS10S40,L3F part is unused and in its original packaging.
Return procedure for CBS10S40,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CBS10S40,L3F Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

