Toshiba Semiconductor and Storage CMH07(TE12L,Q,M)

Overview

CMH07(TE12L,Q,M) from Toshiba is a high-efficiency silicon epitaxial diode optimized for radio-frequency rectification in switching regulators. It delivers V_RRM = 200 V, I_F(AV) = 2.0 A at T_a = 35°C, V_FM ≤ 0.98 V at 2.0 A, t_rr ≤ 35 ns, and uses the compact M-FLAT™ surface-mount package for high-density board assembly.

For engineers reviewing the CMH07(TE12L,Q,M) datasheet, CMH07(TE12L,Q,M) pinout, CMH07(TE12L,Q,M) application, or CMH07(TE12L,Q,M) equivalent, key selection criteria include fast recovery performance under high-di/dt conditions, low forward voltage at rated current, thermal resistance dependency on PCB layout, and suitability for DC-DC converter output stages operating up to several hundred kHz.

Technical Context

The CMH07(TE12L,Q,M) is a planar silicon epitaxial PN-junction diode with optimized carrier lifetime control to achieve very fast reverse recovery (t_rr ≤ 35 ns at I_F = 1 A, di/dt = −30 A/µs) while maintaining low forward voltage drop. Its structure avoids soft recovery characteristics, making it suitable for hard-switched topologies.

It operates across −40°C to +150°C junction temperature range and requires careful thermal design: R_th(j-a) varies from 60°C/W (ceramic board, 2 mm × 2 mm land) to 210°C/W (glass-epoxy, minimal 2.1 mm × 1.4 mm land), directly impacting maximum sustainable I_F(AV).

Key Specifications

Pinout & Package

The CMH07(TE12L,Q,M) uses the M-FLAT™ surface-mount package (JEITA code 3-4E1S), measuring 2.1 mm × 1.4 mm × 0.9 mm, with exposed cathode pad for thermal conduction. It features two terminals in a single-row configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed rectifier applications.

Compared with RB055LAM-40TR and ES2D-E3/57T, the CMH07(TE12L,Q,M) uniquely combines 200 V rating, 2.0 A average current, sub-40 ns recovery, and M-FLAT™ packaging-enabling high-efficiency, space-constrained switching regulator designs without trade-offs in voltage margin or thermal interface.

Availability

CMH07(TE12L,Q,M) is available at Aetrix Electronics and suitable for switching regulator output rectification, DC-DC freewheeling paths, high-frequency AC-DC adapters, and industrial auxiliary power supplies requiring stable component supply and consistent M-FLAT™ package sourcing.

Supply support for CMH07(TE12L,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and industrial-grade robustness.

The CMH07(TE12L,Q,M) belongs to Toshiba's High-Efficiency Diode (HED) family, engineered specifically for high-frequency switching power conversion where low forward voltage and fast recovery are critical to system-level efficiency and thermal performance.

FAQ

What is the maximum allowable ambient temperature for continuous operation of CMH07(TE12L,Q,M)?

The CMH07(TE12L,Q,M) supports continuous operation up to T_a = 35°C when mounted on a 50 mm × 50 mm ceramic board with 2 mm × 2 mm solder land, per its I_F(AV) = 2.0 A rating. At higher ambient temperatures, derating is required-e.g., I_F(AV) drops to ~1.2 A at T_a = 70°C. Always consult the Ta max–IF(AV) curve in the CMH07(TE12L,Q,M) datasheet for precise thermal limits.

Does CMH07(TE12L,Q,M) support reflow soldering, and what profile is recommended?

Yes, the CMH07(TE12L,Q,M) is qualified for lead-free reflow soldering per JEDEC J-STD-020. Toshiba specifies peak temperature ≤ 260°C for ≤ 10 seconds. The M-FLAT™ package's low mass and thermal symmetry enable uniform heating; however, thermal relief design on the cathode pad is essential to avoid tombstoning. Refer to the CMH07(TE12L,Q,M) mounting guide for land pattern and stencil recommendations.

How does the thermal resistance of CMH07(TE12L,Q,M) change with PCB construction?

R_th(j-a) for CMH07(TE12L,Q,M) ranges from 60°C/W (on ceramic board, 2 mm × 2 mm land) to 210°C/W (on glass-epoxy board, minimal 2.1 mm × 1.4 mm land). This 3.5× variation directly affects junction temperature rise: at 2.0 A, ΔT_j increases from ~120°C to ~420°C above ambient. Proper copper pour and thermal vias under the cathode are mandatory for reliable CMH07(TE12L,Q,M) operation.

Is CMH07(TE12L,Q,M) suitable for synchronous rectification circuits?

No-CMH07(TE12L,Q,M) is a passive silicon diode, not a synchronous rectifier IC or MOSFET. It lacks gate control and cannot be actively turned off. It serves as a freewheeling or output rectifier in non-synchronous topologies. For synchronous designs, use dedicated SR controllers paired with low-R_DS(on) MOSFETs. The CMH07(TE12L,Q,M) remains relevant as a cost-effective, robust alternative where timing control isn't required.

What is the reverse recovery charge Q_rr specification for CMH07(TE12L,Q,M)?

Toshiba does not publish Q_rr in the CMH07(TE12L,Q,M) datasheet. Only t_rr = 35 ns (max) is specified under I_F = 1 A, di/dt = −30 A/µs test conditions. Designers requiring Q_rr should measure it empirically or select alternative diodes with documented Q_rr data-e.g., certain Vishay or ON Semiconductor Fast Recovery Diodes. The CMH07(TE12L,Q,M) prioritizes t_rr and V_FM over Q_rr optimization.