Toshiba Semiconductor and Storage CMS30I30A(TE12L,QM

Overview

CMS30I30A from Toshiba Electronic Devices & Storage Corporation is a Schottky barrier diode optimized for secondary rectification and reverse-current protection in compact DC-DC converters and mobile power circuits. It delivers 3 A average forward current, 30 V repetitive peak reverse voltage, and a low 0.49 V max forward voltage at 3 A, enabling high-efficiency operation in space-constrained applications.

For engineers reviewing the CMS30I30A datasheet, CMS30I30A pinout, CMS30I30A application, or CMS30I30A equivalent, key selection criteria include thermal resistance (16 °C/W junction-to-lead), low-profile M-FLAT package compatibility with high-density PCB layouts, and verified performance under pulsed forward current and reverse-bias conditions per Toshiba Rev.4.0.B specification.

Technical Context

The CMS30I30A employs a planar Schottky junction structure to minimize forward conduction loss while maintaining controlled reverse leakage. Its 30 V VRRM rating targets low-voltage synchronous rectifier and OR-ing applications where fast switching and low VF are critical.

Thermal design relies on direct junction-to-lead conduction (Rth(j-ℓ) = 16 °C/W), not ambient dissipation-making cathode pad layout and solder land size (6 mm × 6 mm on 1.6 mm FR-4) essential for sustaining 3 A continuous current without exceeding 120 °C junction temperature.

Key Specifications

Pinout & Package

Package: 3-4E1S (Toshiba M-FLAT), surface-mount, 2-terminal, ultra-thin profile (0.023 g typical weight), designed for automated placement and reflow on high-density boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-40TR and SS33HE3/57T, the CMS30I30A uniquely balances lowest VF, M-FLAT thinness, and 30 V rating-making it optimal for volume mobile and space-constrained industrial DC-DC designs where every millivolt and millimeter matters.

Availability

CMS30I30A is available at Aetrix Electronics and suitable for secondary rectification in switching regulators, reverse-current protection in mobile devices, and OR-ing applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for CMS30I30A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and miniaturization for consumer, industrial, and automotive markets.

The CMS30I30A belongs to Toshiba's M-FLAT Schottky diode product line, engineered specifically for high-efficiency, low-profile power conversion in portable and space-constrained electronics.

FAQ

What is the maximum junction temperature for continuous operation of the CMS30I30A?

The CMS30I30A has an absolute maximum junction temperature (Tj) rating of 150 °C, but Toshiba recommends limiting continuous operation to ≤120 °C to ensure long-term reliability. This derating is based on thermal runaway risk in Schottky diodes under high-temperature/high-voltage conditions, as detailed in the Toshiba Semiconductor Reliability Handbook. Maintaining Tj ≤120 °C requires proper cathode pad layout and thermal management per the 6 mm × 6 mm land pattern spec.

Can the CMS30I30A be used in place of a standard silicon rectifier diode?

Yes, the CMS30I30A can replace standard silicon rectifiers in low-voltage, high-current applications where its 0.49 V max forward voltage improves efficiency-but only if the circuit's reverse voltage does not exceed 30 V. Unlike silicon diodes, the CMS30I30A exhibits higher reverse leakage (up to 100 µA), so it is unsuitable for high-impedance or ultra-low-power standby paths where leakage must be sub-1 µA.

What is the significance of the "3-4E1S" package designation for the CMS30I30A?

The "3-4E1S" is Toshiba's internal package code for the M-FLAT surface-mount outline used by the CMS30I30A. It specifies a 2-terminal, ultra-thin (0.65 mm max height), lead-free package with standardized pad geometry and thermal characteristics. This designation ensures mechanical and thermal compatibility across Toshiba's M-FLAT diode family and guides PCB land pattern design per the 6 mm × 6 mm cathode pad requirement.

How does the CMS30I30A's thermal resistance compare between junction-to-ambient and junction-to-lead?

The CMS30I30A has Rth(j-a) = 60 °C/W (on ceramic board) and Rth(j-ℓ) = 16 °C/W-indicating that heat flows far more efficiently to the cathode lead than to ambient air. This confirms that thermal performance depends critically on cathode pad design, not board airflow or ambient cooling. For reliable 3 A operation, the cathode must be connected to sufficient copper area; relying on Rth(j-a) alone will underestimate junction temperature.

Is the CMS30I30A RoHS compliant and halogen-free?

Yes, the CMS30I30A is RoHS compliant and halogen-free per Toshiba's environmental specifications. This is confirmed in Toshiba's official documentation and supported by material declarations available through authorized distributors. Customers must verify compliance for their specific production lot using Toshiba's published PPAP or IMDS data, as regulatory requirements may vary by region and end-use application.