Toshiba Semiconductor and Storage CRS10I30B(TE85L,QM

Overview

CRS10I30B from Toshiba is a Schottky barrier diode optimized for secondary rectification in DC-DC switching regulators and reverse-current protection in portable electronics. It delivers V_RRM = 30 V, I_F(AV) = 1.0 A at T_a = 51°C, and V_FM ≤ 0.42 V at I_FM = 1.0 A, housed in the ultra-thin S-FLAT™ package (3-2A1S) for high-density PCB layouts.

For engineers reviewing the CRS10I30B datasheet, CRS10I30B pinout, CRS10I30B application, or CRS10I30B equivalent, key selection criteria include low forward voltage drop under 1 A load, thermal resistance of 140 °C/W on standard FR-4, junction temperature rating up to 150 °C, and compatibility with compact mobile power rails requiring fast recovery and minimal conduction loss.

Technical Context

The CRS10I30B employs a planar Schottky junction structure enabling low V_FM and negligible reverse recovery charge-critical for high-frequency (>100 kHz) synchronous rectification. Its 30 V V_RRM rating targets 5 V–12 V output rails in buck converters and USB-powered systems.

Thermal performance is defined by mounting-dependent R_th(j-a): 140 °C/W on 50 mm × 50 mm glass-epoxy board with 6 mm × 6 mm solder land, and 70 °C/W on ceramic substrate. Junction-to-lead resistance is fixed at 20 °C/W, supporting localized thermal management via PCB copper pour under the cathode pad.

Key Specifications

Pinout & Package

Package: S-FLAT™ (JEITA 3-2A1S), surface-mount, 2-terminal, ultra-thin profile (max height 0.9 mm), 0.013 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB055LAM-40TR and SS12, the CRS10I30B offers the lowest V_FM (0.42 V) in its class and the smallest footprint (2.8 mm × 1.2 mm), making it optimal for space-constrained 5–12 V power stages where thermal headroom and efficiency are prioritized over ultra-high V_RRM.

Availability

CRS10I30B is available at Aetrix Electronics and suitable for USB power delivery protection, point-of-load DC-DC rectification, and portable medical sensor power requiring stable component supply and long-term manufacturability.

Supply support for CRS10I30B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for automotive, industrial, and consumer applications.

The CRS10I30B belongs to Toshiba's S-FLAT™ Schottky diode family, engineered specifically for high-efficiency, high-density DC-DC conversion in battery-powered and thermally constrained systems.

FAQ

What is the maximum average forward current rating for CRS10I30B under standard PCB conditions?

The CRS10I30B is rated for I_F(AV) = 1.0 A when mounted on a 50 mm × 50 mm glass-epoxy board with 6 mm × 6 mm solder land and 1.6 mm thickness at T_a = 51°C. At 25°C ambient, derating curves allow up to 1.2 A, but thermal design must ensure T_j remains ≤120°C for reliability. The CRS10I30B datasheet specifies this condition explicitly in the Absolute Maximum Ratings table.

Does CRS10I30B have a specified junction-to-lead thermal resistance?

Yes, the CRS10I30B has a guaranteed R_th(j-ℓ) = 20 °C/W, measured from junction to lead (cathode terminal). This value is independent of PCB layout and enables accurate thermal modeling of heat transfer from the die directly into the cathode pad and underlying copper. This parameter is critical for designing thermal relief patterns and verifying safe operation in sealed enclosures using the CRS10I30B.

What is the repetitive peak reverse current of CRS10I30B at its full 30 V rating?

The CRS10I30B exhibits I_R(RRM) ≤ 60 µA at V_RRM = 30 V and T_a = 25°C, per the Electrical Characteristics table. This leakage level ensures minimal standby power loss in reverse-biased configurations such as OR-ing and reverse-polarity protection. At elevated temperatures (e.g., 85°C), leakage may rise to ~200 µA, which remains within design margins for most portable applications using the CRS10I30B.

Can CRS10I30B be used in place of a standard PN rectifier in a 100 kHz flyback converter?

Yes, the CRS10I30B is well-suited for 100 kHz flyback secondary rectification due to its zero reverse recovery charge and low V_FM. Unlike PN diodes, it eliminates reverse recovery spikes and associated EMI, improving efficiency by 2–3% and simplifying snubber design. However, its 30 V V_RRM limits use to ≤24 V output designs. For higher-voltage flybacks, confirm reflected voltage stress does not exceed 30 V before selecting the CRS10I30B.

What is the physical package designation and footprint compatibility of CRS10I30B?

The CRS10I30B uses the JEITA-standardized S-FLAT™ package (code 3-2A1S), measuring 2.8 mm × 1.2 mm with 0.9 mm max height and 0.65 mm pitch. It is footprint-compatible with other S-FLAT™ diodes like the CRS08 series but not with SOD-123 or SMA packages. Land pattern dimensions are provided in the Toshiba datasheet, and the CRS10I30B requires reflow profile optimization for its thin-profile construction.