Toshiba Semiconductor and Storage CRS10I40B(TE85L,QM

Overview

CRS10I40B from Toshiba Electronic Devices & Storage Corporation is a Schottky barrier diode optimized for secondary rectification and reverse-current protection in compact DC-DC converters and mobile power circuits. It delivers V_RRM = 40 V, I_F(AV) = 1 A, V_FM ≤ 0.45 V @ 1 A, and uses the ultra-thin S-FLAT (3-2A1S) package for high-density PCB layouts.

For engineers reviewing the CRS10I40B datasheet, CRS10I40B pinout, CRS10I40B application, or CRS10I40B equivalent, key selection criteria include low forward voltage for efficiency-critical 5–12 V output rails, thermal resistance limits under board-constrained conditions, and derating guidance for junction temperature control in portable battery-powered systems.

Technical Context

This Schottky diode employs a planar silicon structure with metal-semiconductor junction to achieve fast switching (<10 ns recovery) and minimal forward conduction loss. Its low V_FM and moderate V_RRM target mid-voltage secondary-side rectification where efficiency and thermal footprint are prioritized over ultra-high blocking capability.

The device operates within T_j = −55 °C to +150 °C, with R_th(j-a) = 70 °C/W on ceramic board and R_th(j-l) = 20 °C/W to cathode lead - enabling direct thermal coupling to copper pours or leads in space-constrained designs.

Key Specifications

Pinout & Package

Package: S-FLAT (Toshiba designation 3-2A1S), ultra-thin surface-mount package (0.9 mm max height), 2-pin, anode/cathode configuration, weight 0.013 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB050M-30 and SS12, CRS10I40B provides the highest V_RRM/V_FM ratio in the S-FLAT form factor, enabling reliable operation across wider input ranges while maintaining minimal board area and thermal resistance - critical for next-generation compact power modules.

Availability

CRS10I40B is available at Aetrix Electronics and suitable for USB PD adapters, smartphone battery management systems, and industrial IoT sensor nodes requiring stable component supply and long-term manufacturability.

Supply support for CRS10I40B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization for global electronics markets.

The CRS10I40B belongs to Toshiba's S-FLAT Schottky diode product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and reverse-current protection in consumer, industrial, and automotive power systems.

FAQ

What is the maximum junction temperature specification for CRS10I40B?

The absolute maximum junction temperature (T_j) for CRS10I40B is 150 °C. However, Toshiba recommends limiting steady-state T_j to ≤120 °C for high-reliability operation. This derating guideline is based on thermal runaway risk in Schottky diodes under high-voltage reverse bias and elevated ambient conditions - consistent with the manufacturer's Reliability Handbook recommendations for this device family.

Does CRS10I40B support reflow soldering, and what profile is recommended?

Yes, CRS10I40B supports standard Pb-free reflow soldering per J-STD-020. The S-FLAT (3-2A1S) package is qualified for peak temperatures up to 260 °C for 30 seconds. Recommended land pattern dimensions are provided in Figure 9.1 of the CRS10I40B datasheet - using a 2 mm × 2 mm solder pad on ceramic or 6 mm × 6 mm on FR-4 ensures optimal thermal transfer and mechanical reliability for CRS10I40B.

How does the thermal resistance of CRS10I40B vary with PCB layout?

R_th(j-a) for CRS10I40B is 70 °C/W on a 50 mm × 50 mm ceramic board with 2 mm × 2 mm pads, but rises to ~140 °C/W on standard FR-4 with same pad size. Increasing pad area to 6 mm × 6 mm on FR-4 lowers R_th(j-a) to ~70 °C/W. These values directly impact CRS10I40B's safe operating area - underscoring the need to match layout to thermal requirements in final design.

Is CRS10I40B RoHS compliant and halogen-free?

Yes, CRS10I40B meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation. The device carries the "RoHS-compliant" marking on its packaging and is listed in Toshiba's official RoHS status database. Customers must verify latest compliance status via Toshiba's website before final qualification, as regulatory updates may affect material declarations.

What is the typical junction capacitance of CRS10I40B and how does it affect switching behavior?

The typical junction capacitance (C_j) of CRS10I40B is 62 pF at V_R = 10 V and f = 1 MHz. This low value minimizes reverse recovery charge (Q_rr) and associated switching losses in high-frequency DC-DC converters (300–1000 kHz), reducing EMI generation and improving efficiency - especially in flyback and synchronous buck topologies where CRS10I40B is commonly deployed.